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Class Information
Number: 257/E29.306
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With floating gate (epo) > Hi-lo programming levels only (epo) > Charging by hot carrier injection (epo) > Hot carrier injection from channel (epo)
Description: This subclass is indented under subclass E29.305. This subclass is substantially the same in scope as ECLA classification H01L29/788B6B.










Patents under this class:
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Patent Number Title Of Patent Date Issued
5574685 Self-aligned buried channel/junction stacked gate flash memory cell Nov. 12, 1996
5572054 Method of operating a single transistor non-volatile electrically alterable semiconductor memory device Nov. 5, 1996
5568439 Flash EEPROM system which maintains individual memory block cycle counts Oct. 22, 1996
5563083 Method of fabricating non-volatile sidewall memory cell Oct. 8, 1996
5554553 Highly compact EPROM and flash EEPROM devices Sep. 10, 1996
5544118 Flash EEPROM system cell array with defect management including an error correction scheme Aug. 6, 1996
5535158 Non-volatile semiconductor memory device and method for erasure and production thereof Jul. 9, 1996
5519653 Channel accelerated carrier tunneling-(CACT) method for programming memories May. 21, 1996
5517044 Non-volatile semiconductor memory device having thin film transistors equipped with floating gates May. 14, 1996
5515319 Non-volatile memory cell and level shifter May. 7, 1996
5511036 Flash EEPROM cell and array with bifurcated floating gates Apr. 23, 1996
5510639 Non-volatile semiconductor memory having a ring-shaped floating gate Apr. 23, 1996
5506431 Double poly trenched channel accelerated tunneling electron (DPT-CATE) cell, for memory applications Apr. 9, 1996
5504358 Asymmetric non-volatile memory cell Apr. 2, 1996
5502321 Flash memory having inclined channel Mar. 26, 1996
5488243 SOI MOSFET with floating gate Jan. 30, 1996
5486480 Method of fabrication of protected programmable transistor with reduced parasitic capacitances Jan. 23, 1996
5477072 Nonvolatile semiconductor memory device Dec. 19, 1995
5477068 Nonvolatile semiconductor memory device Dec. 19, 1995
5472891 Method of manufacturing a semiconductor device Dec. 5, 1995
5461249 Nonvolatile semiconductor memory device and manufacturing method therefor Oct. 24, 1995
5455792 Flash EEPROM devices employing mid channel injection Oct. 3, 1995
5455184 Method of making high speed EPROM containing graded source/drain profile Oct. 3, 1995
5452248 Method of operating a nonvolatile semiconductor memory device Sep. 19, 1995
5446298 Semiconductor memory device including a floating gate having an undoped edge portion proximate to a source portion of the memory device Aug. 29, 1995
5434825 Flash EEPROM system cell array with more than two storage states per memory cell Jul. 18, 1995
5432106 Manufacture of an asymmetric non-volatile memory cell Jul. 11, 1995
5432739 Non-volatile sidewall memory cell method of fabricating same Jul. 11, 1995
5424567 Protected programmable transistor with reduced parasitic capacitances and method of fabrication Jun. 13, 1995
5407853 Method of making semiconductor integrated circuit device having single-element type non-volatile memory elements Apr. 18, 1995
5396459 Single transistor flash electrically programmable memory cell in which a negative voltage is applied to the nonselected word line Mar. 7, 1995
5396458 Semiconductor memory device and method of writing and reading out information for the same Mar. 7, 1995
5394357 Non-volatile semiconductor memory device Feb. 28, 1995
5394360 Non-volatile large capacity high speed memory with electron injection from a source into a floating gate Feb. 28, 1995
5386132 Multimedia storage system with highly compact memory device Jan. 31, 1995
5378909 Flash EEPROM cell having gap between floating gate and drain for high hot electron injection efficiency for programming Jan. 3, 1995
5379255 Three dimensional famos memory devices and methods of fabricating Jan. 3, 1995
5371704 Nonvolatile memory device with compensation for over-erasing operation Dec. 6, 1994
5365098 Non-volatile semiconductor memory having improved erasure characteristics Nov. 15, 1994
5360751 Method of making a cell structure for a programmable read only memory device Nov. 1, 1994
5357133 Semiconductor memory device having improved write characteristic Oct. 18, 1994
5349220 Flash memory cell and its operation Sep. 20, 1994
5349221 Semiconductor memory device and method of reading out information for the same Sep. 20, 1994
5345104 Flash memory cell having antimony drain for reduced drain voltage during programming Sep. 6, 1994
5343424 Split-gate flash EEPROM cell and array with low voltage erasure Aug. 30, 1994
5340760 Method of manufacturing EEPROM memory device Aug. 23, 1994
5341342 Flash memory cell structure Aug. 23, 1994
5338952 Non-volatile memory Aug. 16, 1994
5337274 Nonvolatile semiconductor memory device having adjacent memory cells and peripheral transistors separated by field oxide Aug. 9, 1994
5330938 Method of making non-volatile split gate EPROM memory cell and self-aligned field insulation Jul. 19, 1994

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