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Class Information
Number: 257/E29.306
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With floating gate (epo) > Hi-lo programming levels only (epo) > Charging by hot carrier injection (epo) > Hot carrier injection from channel (epo)
Description: This subclass is indented under subclass E29.305. This subclass is substantially the same in scope as ECLA classification H01L29/788B6B.










Patents under this class:
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Patent Number Title Of Patent Date Issued
5828602 Memory system having multiple programmable reference cells Oct. 27, 1998
5828099 Semiconductor device having a nonvolatile memory cell in which the floating gate is charged with hot charge carriers at the source side Oct. 27, 1998
5824583 Non-volatile semiconductor memory and method of manufacturing the same Oct. 20, 1998
5825063 Three-terminal silicon synaptic device Oct. 20, 1998
5822242 Asymmetric virtual ground p-channel flash cell with latid n-type pocket and method of fabrication therefor Oct. 13, 1998
5821581 Non-volatile memory cell structure and process for forming same Oct. 13, 1998
5801401 Flash memory with microcrystalline silicon carbide film floating gate Sep. 1, 1998
5780341 Low voltage EEPROM/NVRAM transistors and making method Jul. 14, 1998
5780892 Flash E.sup.2 PROM cell structure with poly floating and control gates Jul. 14, 1998
5777361 Single gate nonvolatile memory cell and method for accessing the same Jul. 7, 1998
5776811 Simplified process for fabricating flash eeprom cells Jul. 7, 1998
5776810 Method for forming EEPROM with split gate source side injection Jul. 7, 1998
5761121 PMOS single-poly non-volatile memory structure Jun. 2, 1998
RE35810 Plug-based floating gate memory May. 26, 1998
5753951 EEPROM cell with channel hot electron programming and method for forming the same May. 19, 1998
5751636 Semiconductor memory device having data erasing mechanism May. 12, 1998
5750427 Non-volatile memory cell structure and process for forming same May. 12, 1998
5739569 Non-volatile memory cell with oxide and nitride tunneling layers Apr. 14, 1998
5739567 Highly compact memory device with nonvolatile vertical transistor memory cell Apr. 14, 1998
5736443 Flash EEPROM cell and method of manufacturing the same Apr. 7, 1998
5736764 PMOS flash EEPROM cell with single poly Apr. 7, 1998
5726470 Nonvolatile semiconductor memory device and method of fabrication of the same Mar. 10, 1998
5723888 Non-volatile semiconductor memory device Mar. 3, 1998
5708588 Flash EEPROM memory with improved discharged speed using substrate bias and method therefor Jan. 13, 1998
5706227 Double poly split gate PMOS flash memory cell Jan. 6, 1998
5703808 Non-volatile memory cell and method of programming Dec. 30, 1997
5696718 Device having an electrically erasable non-volatile memory and process for producing such a device Dec. 9, 1997
5691939 Triple poly PMOS flash memory cell Nov. 25, 1997
5691552 Nonvolatile semiconductor memory formed with silicon-on-insulator structure Nov. 25, 1997
5687118 PMOS memory cell with hot electron injection programming and tunnelling erasing Nov. 11, 1997
5677215 Method of fabricating a nonvolatile semiconductor memory device Oct. 14, 1997
5675161 Channel accelerated tunneling electron cell, with a select region incorporated, for high density low power applications Oct. 7, 1997
5656522 Method of manufacturing a semiconductor integrated circuit device having single-element type non-volatile memory elements Aug. 12, 1997
5656839 Semiconductor integrated circuit device having single-element type nonvolatile memory elements Aug. 12, 1997
5652449 Semiconductor device with an insulating film separating conductive layers and method of maufacturing semiconductor device Jul. 29, 1997
5650649 Floating gate type field effect transistor having control gate applied with pulses for evacuating carriers from p-type semiconductor floating gate Jul. 22, 1997
5638327 Flash-EEPROM memory array and method for biasing the same Jun. 10, 1997
5629541 Semiconductor memory device constituted by single transistor type non-volatile cells and facilitated for both electrical erasing and writing of data May. 13, 1997
5627392 Semiconductor structure for long term learning May. 6, 1997
5623445 Semiconductor memory device having data erasing mechanism Apr. 22, 1997
5616510 Method for making multimedia storage system with highly compact memory cells Apr. 1, 1997
5617357 Flash EEPROM memory with improved discharge speed using substrate bias and method therefor Apr. 1, 1997
5614747 Method for manufacturing a flash EEPROM cell Mar. 25, 1997
5612914 Asymmetrical non-volatile memory cell, arrays and methods for fabricating same Mar. 18, 1997
5604142 Method of making an EPROM with peripheral transistor Feb. 18, 1997
5597748 Method of manufacturing NAND type EEPROM Jan. 28, 1997
5591652 Method of manufacturing flash memory with inclined channel region Jan. 7, 1997
5586073 Semiconductor device having a multi-layer channel structure Dec. 17, 1996
5583812 Flash EEPROM system cell array with more than two storage states per memory cell Dec. 10, 1996
5576567 Vertical memory cell array and method of fabrication Nov. 19, 1996

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