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Class Information
Number: 257/E29.306
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With floating gate (epo) > Hi-lo programming levels only (epo) > Charging by hot carrier injection (epo) > Hot carrier injection from channel (epo)
Description: This subclass is indented under subclass E29.305. This subclass is substantially the same in scope as ECLA classification H01L29/788B6B.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6246089 P-channel EEPROM devices Jun. 12, 2001
6236085 Semiconductor memory device having high-concentration region around electric-field moderating layer in substrate May. 22, 2001
6232180 Split gate flash memory cell May. 15, 2001
6222762 Multi-state memory Apr. 24, 2001
6222766 EEPROM memory cell and method of fabricating the same Apr. 24, 2001
6214668 Structure of a channel write/erase flash memory cell and manufacturing method and operating method thereof Apr. 10, 2001
6211011 Method for fabricating asymmetric virtual ground P-channel flash cell Apr. 3, 2001
6204126 Method to fabricate a new structure with multi-self-aligned for split-gate flash Mar. 20, 2001
6190968 Method for forming EPROM and flash memory cells with source-side injection Feb. 20, 2001
6188614 Structure of a channel write/erase flash memory cell and manufacturing method and operating method thereof Feb. 13, 2001
6187635 Channel hot electron programmed memory device having improved reliability and operability Feb. 13, 2001
6172394 Non-volatile semiconductor memory device having a floating gate with protruding conductive side-wall portions Jan. 9, 2001
6172397 Non-volatile semiconductor memory device Jan. 9, 2001
6168995 Method of fabricating a split gate memory cell Jan. 2, 2001
6166401 Flash memory with microcrystalline silicon carbide film floating gate Dec. 26, 2000
6159800 Method of forming a memory cell Dec. 12, 2000
6160739 Non-volatile memories with improved endurance and extended lifetime Dec. 12, 2000
6157058 Low voltage EEPROM/NVRAM transistors and making method Dec. 5, 2000
6157057 Flash memory cell Dec. 5, 2000
6147379 Semiconductor device and method for fabricating the same Nov. 14, 2000
6143607 Method for forming flash memory of ETOX-cell programmed by band-to-band tunneling induced substrate hot electron and read by gate induced drain leakage current Nov. 7, 2000
6143636 High density flash memory Nov. 7, 2000
6137134 Semiconductor memory device Oct. 24, 2000
6133604 NOR array architecture and operation methods for ETOX cells capable of full EEPROM functions Oct. 17, 2000
6130453 Flash memory structure with floating gate in vertical trench Oct. 10, 2000
6130134 Method for forming asymmetric flash EEPROM with a pocket to focus electron injections Oct. 10, 2000
6121655 Nonvolatile semiconductor memory device and method for fabricating the same and semiconductor integrated circuit Sep. 19, 2000
6107141 Flash EEPROM Aug. 22, 2000
6103575 Method of forming a single poly cylindrical flash memory cell having high coupling ratio Aug. 15, 2000
6091634 Compact nonvolatile memory using substrate hot carrier injection Jul. 18, 2000
6091635 Electron injection method for substrate-hot-electron program and erase V.sub.T tightening for ETOX cell Jul. 18, 2000
6091644 Structure of a channel write/erase flash memory cell Jul. 18, 2000
6090670 Highly efficient transistor for fast programming of flash memories Jul. 18, 2000
6087219 Highly reliable flash memory structure with halo source Jul. 11, 2000
6084262 Etox cell programmed by band-to-band tunneling induced substrate hot electron and read by gate induced drain leakage current Jul. 4, 2000
6066875 Method of fabricating split-gate source side injection flash EEPROM array May. 23, 2000
6061269 P-channel memory cell and method for forming the same May. 9, 2000
6060360 Method of manufacture of P-channel EEprom and flash EEprom devices May. 9, 2000
6060742 ETOX cell having bipolar electron injection for substrate-hot-electron program May. 9, 2000
6054732 Single polysilicon flash EEPROM with low positive programming and erasing voltage and small cell size Apr. 25, 2000
6051860 Nonvolatile semiconductor memory device and method for fabricating the same and semiconductor integrated circuit Apr. 18, 2000
6043122 Three-dimensional non-volatile memory Mar. 28, 2000
6031771 Memory redundancy circuit using single polysilicon floating gate transistors as redundancy elements Feb. 29, 2000
6031263 DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate Feb. 29, 2000
6030869 Method for fabricating nonvolatile semiconductor memory device Feb. 29, 2000
6027974 Nonvolatile memory Feb. 22, 2000
6026028 Hot carrier injection programming and negative gate voltage channel erase flash EEPROM structure Feb. 15, 2000
6026017 Compact nonvolatile memory Feb. 15, 2000
6025625 Single-poly EEPROM cell structure operations and array architecture Feb. 15, 2000
6017793 Method of forming a memory cell of a nonvolatile semiconductor memory device Jan. 25, 2000

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