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Class Information
Number: 257/E29.306
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With floating gate (epo) > Hi-lo programming levels only (epo) > Charging by hot carrier injection (epo) > Hot carrier injection from channel (epo)
Description: This subclass is indented under subclass E29.305. This subclass is substantially the same in scope as ECLA classification H01L29/788B6B.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6917069 Semiconductor memory array of floating gate memory cells with buried bit-line and vertical word line transistor Jul. 12, 2005
6914817 Highly compact EPROM and flash EEPROM devices Jul. 5, 2005
6912158 Transistor with nanocrystalline silicon gate structure Jun. 28, 2005
6906379 Semiconductor memory array of floating gate memory cells with buried floating gate Jun. 14, 2005
6902978 Method of making the selection gate in a split-gate flash EEPROM cell and its structure Jun. 7, 2005
6897521 Split gate flash memory cell May. 24, 2005
6878589 Method and system for improving short channel effect on a floating gate device Apr. 12, 2005
6878991 Vertical device 4F2 EEPROM memory Apr. 12, 2005
6876033 Electrically erasable and programmable non-volatile memory cell Apr. 5, 2005
6873006 Semiconductor memory array of floating gate memory cells with burried floating gate and pointed channel region Mar. 29, 2005
6873004 Virtual ground single transistor memory cell, memory array incorporating same, and method of operation thereof Mar. 29, 2005
6856546 Multi-state memory Feb. 15, 2005
6847088 Non-volatile semiconductor memory devices and methods for manufacturing the same Jan. 25, 2005
6844232 Flash memory device and fabricating method therefor Jan. 18, 2005
6842374 Method for operating N-channel electrically erasable programmable logic device Jan. 11, 2005
6838726 Horizontal memory devices with vertical gates Jan. 4, 2005
6838343 Flash memory with self-aligned split gate and methods for fabricating and for operating the same Jan. 4, 2005
6835979 Nonvolatle memory Dec. 28, 2004
6831326 Trapezoid floating gate to improve program and erase speed for split gate flash Dec. 14, 2004
6828194 Low voltage programmable and erasable flash EEPROM Dec. 7, 2004
6828621 Nonvolatile semiconductor memory device and method for fabricating the same Dec. 7, 2004
6828623 Floating gate memory device with homogeneous oxynitride tunneling dielectric Dec. 7, 2004
6822287 Array of integrated circuit units with strapping lines to prevent punch through Nov. 23, 2004
6815763 Semiconductor memory element, semiconductor device and control method thereof Nov. 9, 2004
6815758 Flash memory cell Nov. 9, 2004
6803623 Nonvolatile semiconductor memory device which can operate at high speed with low voltage, and manufacturing method there Oct. 12, 2004
6787418 Method of making the selection gate in a split-gate flash eeprom cell and its structure Sep. 7, 2004
6785165 Semiconductor device Aug. 31, 2004
6784482 Nonvolatile semiconductor memory device comprising high concentration diffused region Aug. 31, 2004
6784040 Nonvolatile semiconductor memory device and method for fabricating the same Aug. 31, 2004
6781876 Memory device with gallium nitride or gallium aluminum nitride gate Aug. 24, 2004
6777282 Method of manufacturing a semiconductor memory device having a memory cell portion including MISFETs with a floating gate and a peripheral circuit portion with MISFETs Aug. 17, 2004
6774430 Non-volatile semiconductor memory device having gate insulating film with thick end sections Aug. 10, 2004
6770950 Non-volatile semiconductor memory structure Aug. 3, 2004
6770931 Nonvolatile semiconductor memory device and method for fabricating the same Aug. 3, 2004
6768160 Non-volatile memory cell and method of programming for improved data retention Jul. 27, 2004
6768165 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping Jul. 27, 2004
6764905 Method of manufacturing a scalable flash EEPROM memory cell with floating gate spacer wrapped by control gate Jul. 20, 2004
6764902 Method of manufacturing semiconductor device Jul. 20, 2004
6765260 Flash memory with self-aligned split gate and methods for fabricating and for operating the same Jul. 20, 2004
6760258 Means to erase a low voltage programmable and erasable flash EEPROM Jul. 6, 2004
6756632 Integrated circuit with a reprogrammable nonvolatile switch for selectively connecting a source for a signal to a circuit Jun. 29, 2004
6756629 Semiconductor devices including a multi-well and split-gate non-volatile memory transistor structure Jun. 29, 2004
6747308 Single poly EEPROM with reduced area Jun. 8, 2004
6744094 Floating gate transistor with horizontal gate layers stacked next to vertical body Jun. 1, 2004
6734490 Nonvolatile memory cell with high programming efficiency May. 11, 2004
6734066 Method for fabricating split gate flash memory cell May. 11, 2004
6731541 Low voltage single poly deep sub-micron flash EEPROM May. 4, 2004
6716700 Method of forming memory arrays based on a triple-polysilicon source-side injection non-volatile memory cell Apr. 6, 2004
6717203 Compact nonvolatile memory using substrate hot carrier injection Apr. 6, 2004

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