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Class Information
Number: 257/E29.306
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With floating gate (epo) > Hi-lo programming levels only (epo) > Charging by hot carrier injection (epo) > Hot carrier injection from channel (epo)
Description: This subclass is indented under subclass E29.305. This subclass is substantially the same in scope as ECLA classification H01L29/788B6B.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12

Patent Number Title Of Patent Date Issued
8680619 Method of fabricating hybrid impact-ionization semiconductor device Mar. 25, 2014
8587036 Non-volatile memory and fabricating method thereof Nov. 19, 2013
8390054 Semiconductor memory element and semiconductor memory device Mar. 5, 2013
8344440 Three-terminal single poly NMOS non-volatile memory cell with shorter program/erase times Jan. 1, 2013
8324681 Stacked non-volatile memory device and methods for fabricating the same Dec. 4, 2012
8319277 Semiconductor device, method of manufacturing same, and apparatus for designing same Nov. 27, 2012
8174062 Semiconductor memory device and manufacturing method thereof May. 8, 2012
8110465 Field effect transistor having an asymmetric gate electrode Feb. 7, 2012
8097912 Systems and methods for self convergence during erase of a non-volatile memory device Jan. 17, 2012
8004031 Memory device transistors Aug. 23, 2011
7928491 Semiconductor memory device having reference transistor and method of manufacturing the same Apr. 19, 2011
7897455 Semiconductor device and method of manufacturing the same Mar. 1, 2011
7825400 Strain-inducing semiconductor regions Nov. 2, 2010
7759721 Single poly non-volatile memory device with inversion diffusion regions and methods for operating the same Jul. 20, 2010
7671404 Fabrication method and structure of semiconductor non-volatile memory device Mar. 2, 2010
7626864 Electrically alterable non-volatile memory cells and arrays Dec. 1, 2009
7586146 Non-volatile memory and method of fabricating same Sep. 8, 2009
7579246 Semiconductor device manufacturing method including oblique ion implantation process and reticle pattern forming method Aug. 25, 2009
7550347 Methods of forming integrated circuit device gate structures Jun. 23, 2009
7544603 Method of fabricating silicon nitride layer and method of fabricating semiconductor device Jun. 9, 2009
7462539 Direct tunneling memory with separated transistor and tunnel areas Dec. 9, 2008
7449746 EEPROM with split gate source side injection Nov. 11, 2008
7411246 Self aligned method of forming a semiconductor memory array of floating gate memory cells with buried bit-line and raised source line, and a memory array made thereby Aug. 12, 2008
7075139 Method of manufacturing semiconductor device Jul. 11, 2006
7074672 Self aligned method of forming a semiconductor memory array of floating gate memory cells with buried bit-line and vertical word line transistor Jul. 11, 2006
7071512 Non-volatile semiconductor memory device Jul. 4, 2006
7057230 Nonvolatile semiconductor memory device employing transistors having different gate withstand voltages for enhanced reading speed Jun. 6, 2006
7045853 Semiconductor memory element, semiconductor device and control method thereof May. 16, 2006
7042043 Programmable array logic or memory devices with asymmetrical tunnel barriers May. 9, 2006
7041554 Methods of fabricating flash memory devices having self aligned shallow trench isolation structures May. 9, 2006
7018895 Nonvolatile memory cell with multiple floating gates formed after the select gate Mar. 28, 2006
7015102 Method of forming floating-gate memory cell having trench structure with ballistic-charge injector, and the array of memory cells made thereby Mar. 21, 2006
7005698 Split gate flash memory cell Feb. 28, 2006
7005344 Method of forming a device with a gallium nitride or gallium aluminum nitride gate Feb. 28, 2006
7001809 Method to increase coupling ratio of source to floating gate in split-gate flash Feb. 21, 2006
6996009 NOR flash memory cell with high storage density Feb. 7, 2006
6990023 Horizontal memory devices with vertical gates Jan. 24, 2006
6982456 Nonvolatile semiconductor memory device and method for fabricating the same Jan. 3, 2006
6982458 Method of making the selection gate in a split-gate flash EEPROM cell and its structure Jan. 3, 2006
6963102 Non-volatile semiconductor memory having a decreased gate length Nov. 8, 2005
6963105 Flash memory cell structure Nov. 8, 2005
6960501 Method of manufacturing a semiconductor memory device having a non-volatile memory cell portion with single misfet transistor type memory cells and a peripheral circuit portion with misfets Nov. 1, 2005
6958513 Floating-gate memory cell having trench structure with ballistic-charge injector, and the array of memory cells Oct. 25, 2005
6958274 Method of fabricating split gate flash memory device Oct. 25, 2005
6958273 Self-aligned method of forming a semiconductor memory array of floating gate memory cells with buried floating gate, pointed floating gate and pointed channel region, and a memory array made t Oct. 25, 2005
6952032 Programmable array logic or memory devices with asymmetrical tunnel barriers Oct. 4, 2005
6936884 Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory Aug. 30, 2005
6924527 Split gate flash memory cell structure and method of manufacturing the same Aug. 2, 2005
6921964 Semiconductor device having a non-volatile memory transistor formed on a semiconductor Jul. 26, 2005
6917070 Single-poly EPROM and method for forming the same Jul. 12, 2005

1 2 3 4 5 6 7 8 9 10 11 12

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