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Class Information
Number: 257/E29.306
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With floating gate (epo) > Hi-lo programming levels only (epo) > Charging by hot carrier injection (epo) > Hot carrier injection from channel (epo)
Description: This subclass is indented under subclass E29.305. This subclass is substantially the same in scope as ECLA classification H01L29/788B6B.


Patents under this class:
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Patent Number Title Of Patent Date Issued
7626864 Electrically alterable non-volatile memory cells and arrays Dec. 1, 2009
7586146 Non-volatile memory and method of fabricating same Sep. 8, 2009
7579246 Semiconductor device manufacturing method including oblique ion implantation process and reticle pattern forming method Aug. 25, 2009
7550347 Methods of forming integrated circuit device gate structures Jun. 23, 2009
7544603 Method of fabricating silicon nitride layer and method of fabricating semiconductor device Jun. 9, 2009
7462539 Direct tunneling memory with separated transistor and tunnel areas Dec. 9, 2008
7449746 EEPROM with split gate source side injection Nov. 11, 2008
7411246 Self aligned method of forming a semiconductor memory array of floating gate memory cells with buried bit-line and raised source line, and a memory array made thereby Aug. 12, 2008
7074672 Self aligned method of forming a semiconductor memory array of floating gate memory cells with buried bit-line and vertical word line transistor Jul. 11, 2006
7075139 Method of manufacturing semiconductor device Jul. 11, 2006
7071512 Non-volatile semiconductor memory device Jul. 4, 2006
7057230 Nonvolatile semiconductor memory device employing transistors having different gate withstand voltages for enhanced reading speed Jun. 6, 2006
7045853 Semiconductor memory element, semiconductor device and control method thereof May. 16, 2006
7041554 Methods of fabricating flash memory devices having self aligned shallow trench isolation structures May. 9, 2006
7042043 Programmable array logic or memory devices with asymmetrical tunnel barriers May. 9, 2006
7018895 Nonvolatile memory cell with multiple floating gates formed after the select gate Mar. 28, 2006
7015102 Method of forming floating-gate memory cell having trench structure with ballistic-charge injector, and the array of memory cells made thereby Mar. 21, 2006
7005698 Split gate flash memory cell Feb. 28, 2006
7005344 Method of forming a device with a gallium nitride or gallium aluminum nitride gate Feb. 28, 2006
7001809 Method to increase coupling ratio of source to floating gate in split-gate flash Feb. 21, 2006
6996009 NOR flash memory cell with high storage density Feb. 7, 2006
6990023 Horizontal memory devices with vertical gates Jan. 24, 2006
6982458 Method of making the selection gate in a split-gate flash EEPROM cell and its structure Jan. 3, 2006
6982456 Nonvolatile semiconductor memory device and method for fabricating the same Jan. 3, 2006
6963102 Non-volatile semiconductor memory having a decreased gate length Nov. 8, 2005
6963105 Flash memory cell structure Nov. 8, 2005
6960501 Method of manufacturing a semiconductor memory device having a non-volatile memory cell portion with single misfet transistor type memory cells and a peripheral circuit portion with misfets Nov. 1, 2005
6958274 Method of fabricating split gate flash memory device Oct. 25, 2005
6958513 Floating-gate memory cell having trench structure with ballistic-charge injector, and the array of memory cells Oct. 25, 2005
6958273 Self-aligned method of forming a semiconductor memory array of floating gate memory cells with buried floating gate, pointed floating gate and pointed channel region, and a memory array made t Oct. 25, 2005
6952032 Programmable array logic or memory devices with asymmetrical tunnel barriers Oct. 4, 2005
6936884 Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory Aug. 30, 2005
6924527 Split gate flash memory cell structure and method of manufacturing the same Aug. 2, 2005
6921964 Semiconductor device having a non-volatile memory transistor formed on a semiconductor Jul. 26, 2005
6917070 Single-poly EPROM and method for forming the same Jul. 12, 2005
6917069 Semiconductor memory array of floating gate memory cells with buried bit-line and vertical word line transistor Jul. 12, 2005
6914817 Highly compact EPROM and flash EEPROM devices Jul. 5, 2005
6912158 Transistor with nanocrystalline silicon gate structure Jun. 28, 2005
6906379 Semiconductor memory array of floating gate memory cells with buried floating gate Jun. 14, 2005
6902978 Method of making the selection gate in a split-gate flash EEPROM cell and its structure Jun. 7, 2005
6897521 Split gate flash memory cell May. 24, 2005
6878589 Method and system for improving short channel effect on a floating gate device Apr. 12, 2005
6878991 Vertical device 4F2 EEPROM memory Apr. 12, 2005
6876033 Electrically erasable and programmable non-volatile memory cell Apr. 5, 2005
6873006 Semiconductor memory array of floating gate memory cells with burried floating gate and pointed channel region Mar. 29, 2005
6873004 Virtual ground single transistor memory cell, memory array incorporating same, and method of operation thereof Mar. 29, 2005
6856546 Multi-state memory Feb. 15, 2005
6847088 Non-volatile semiconductor memory devices and methods for manufacturing the same Jan. 25, 2005
6844232 Flash memory device and fabricating method therefor Jan. 18, 2005
6842374 Method for operating N-channel electrically erasable programmable logic device Jan. 11, 2005

1 2 3 4 5 6 7 8 9 10 11 12


 
 
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