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Class Information
Number: 257/E29.305
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With floating gate (epo) > Hi-lo programming levels only (epo) > Charging by hot carrier injection (epo)
Description: This subclass is indented under subclass E29.302. This subclass is substantially the same in scope as ECLA classification H01L29/788B6.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.306 Hot carrier injection from channel (epo) 568
257/E29.307 Hot carrier produced by avalanche breakdown of pn junction (e.g., famos) (epo) 81

Patents under this class:

Patent Number Title Of Patent Date Issued
8587036 Non-volatile memory and fabricating method thereof Nov. 19, 2013
8552490 Nonvolatile memory device with a high-K charge storage layer having a U-shaped,cross-sectional structure Oct. 8, 2013
8344440 Three-terminal single poly NMOS non-volatile memory cell with shorter program/erase times Jan. 1, 2013
8174062 Semiconductor memory device and manufacturing method thereof May. 8, 2012
8125020 Non-volatile memory devices with charge storage regions Feb. 28, 2012
7964907 Integrated circuit device gate structures Jun. 21, 2011
7897455 Semiconductor device and method of manufacturing the same Mar. 1, 2011
7759721 Single poly non-volatile memory device with inversion diffusion regions and methods for operating the same Jul. 20, 2010
7531866 Non-volatile semiconductor memory device, drive method and manufacturing method May. 12, 2009
7411836 Method of operating non-volatile memory Aug. 12, 2008
7211858 Split gate storage device including a horizontal first gate and a vertical second gate in a trench May. 1, 2007
6909140 Flash memory with protruded floating gate Jun. 21, 2005
6887756 Method of forming flash memory with protruded floating gate May. 3, 2005
6352886 Method of manufacturing floating gate memory with substrate band-to-band tunneling induced hot electron injection Mar. 5, 2002
6087237 Method of manufacturing a MOSFET by forming a single oxide layer doping with either an oxide accelerator or an oxide inhibitor producing asymmetric thickness Jul. 11, 2000
6009017 Floating gate memory with substrate band-to-band tunneling induced hot electron injection Dec. 28, 1999
5684317 MOS transistor and method of manufacturing thereof Nov. 4, 1997
5367185 Non-volatile semiconductor memory with third electrode covering control gate Nov. 22, 1994
5216269 Electrically-programmable semiconductor memories with buried injector region Jun. 1, 1993
4999812 Architecture for a flash erase EEPROM memory Mar. 12, 1991
4996571 Non-volatile semiconductor memory device erasing operation Feb. 26, 1991
4982377 Erasable programmable read only memory device improved in operation speed and in the amount of read out current Jan. 1, 1991
4972371 Semiconductor memory device Nov. 20, 1990
4876580 Tunnel injection controlling type semiconductor device controlled by static induction effect Oct. 24, 1989
4821236 Semiconductor nonvolatile memory Apr. 11, 1989
4799090 Tunnel injection controlling type semiconductor device controlled by static induction effect Jan. 17, 1989
4577295 Hybrid E.sup.2 cell and related array Mar. 18, 1986
4432075 Electrically programmable non-volatile memory Feb. 14, 1984

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