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Class Information
Number: 257/E29.303
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With floating gate (epo) > Hi-lo programming levels only (epo) > Charging by injection of carriers through conductive insulator (e.g., poole-frankel conduction) (epo)
Description: This subclass is indented under subclass E29.302. This subclass is substantially the same in scope as ECLA classification H01L29/788B2.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 8659952 |
Method of operating non-volatile memory |
Feb. 25, 2014 |
| 8492794 |
Vertical polysilicon-germanium heterojunction bipolar transistor |
Jul. 23, 2013 |
| 8378341 |
Semiconductor device and method of manufacturing semiconductor device |
Feb. 19, 2013 |
| 7777302 |
Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structure |
Aug. 17, 2010 |
| 7671401 |
Non-volatile memory in CMOS logic process |
Mar. 2, 2010 |
| 7442977 |
Gated field effect devices |
Oct. 28, 2008 |
| 7411836 |
Method of operating non-volatile memory |
Aug. 12, 2008 |
| 7247924 |
Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures |
Jul. 24, 2007 |
| 6927128 |
Method for manufacturing low voltage flash memory |
Aug. 9, 2005 |
| 6818558 |
Method of manufacturing a dielectric layer for a silicon-oxide-nitride-oxide-silicon (SONOS) type devices |
Nov. 16, 2004 |
| 6772992 |
Memory cell structure integrated on semiconductor |
Aug. 10, 2004 |
| 6709928 |
Semiconductor device having silicon-rich layer and method of manufacturing such a device |
Mar. 23, 2004 |
| 5726070 |
Silicon-rich tunnel oxide formed by oxygen implantation for flash EEPROM |
Mar. 10, 1998 |
| 5656544 |
Process for forming a polysilicon electrode in a trench |
Aug. 12, 1997 |
| 5617351 |
Three-dimensional direct-write EEPROM arrays and fabrication methods |
Apr. 1, 1997 |
| 5481128 |
Structure for flash memory cell |
Jan. 2, 1996 |
| 5468663 |
Method of fabricating three-dimensional direct-write EEPROM arrays |
Nov. 21, 1995 |
| 5467305 |
Three-dimensional direct-write EEPROM arrays and fabrication methods |
Nov. 14, 1995 |
| 5399516 |
Method of making shadow RAM cell having a shallow trench EEPROM |
Mar. 21, 1995 |
| 5371027 |
Method of manufacturing a semiconductor device having a non-volatile memory with an improved tunnel oxide |
Dec. 6, 1994 |
| 5298447 |
Method of fabricating a flash memory cell |
Mar. 29, 1994 |
| 5208772 |
Gate EEPROM cell |
May. 4, 1993 |
| 4939559 |
Dual electron injector structures using a conductive oxide between injectors |
Jul. 3, 1990 |
| 4729115 |
Non-volatile dynamic random access memory cell |
Mar. 1, 1988 |
| 4717943 |
Charge storage structure for nonvolatile memories |
Jan. 5, 1988 |
| 4688078 |
Partially relaxable composite dielectric structure |
Aug. 18, 1987 |
| 4683554 |
Direct write nonvolatile memory cells |
Jul. 28, 1987 |
| 4665417 |
Non-volatile dynamic random access memory cell |
May. 12, 1987 |
| 4616245 |
Direct-write silicon nitride EEPROM cell |
Oct. 7, 1986 |
| 4471471 |
Non-volatile RAM device |
Sep. 11, 1984 |
| 4458407 |
Process for fabricating semi-conductive oxide between two poly silicon gate electrodes |
Jul. 10, 1984 |
| 4399522 |
Non-volatile static RAM cell with enhanced conduction insulators |
Aug. 16, 1983 |
| 4388704 |
Non-volatile RAM cell with enhanced conduction insulators |
Jun. 14, 1983 |
| 4380057 |
Electrically alterable double dense memory |
Apr. 12, 1983 |
| 4336603 |
Three terminal electrically erasable programmable read only memory |
Jun. 22, 1982 |
| 4334347 |
Method of forming an improved gate member for a gate injected floating gate memory device |
Jun. 15, 1982 |
| 4334292 |
Low voltage electrically erasable programmable read only memory |
Jun. 8, 1982 |
| 4253106 |
Gate injected floating gate memory device |
Feb. 24, 1981 |
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