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Class Information
Number: 257/E29.303
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With floating gate (epo) > Hi-lo programming levels only (epo) > Charging by injection of carriers through conductive insulator (e.g., poole-frankel conduction) (epo)
Description: This subclass is indented under subclass E29.302. This subclass is substantially the same in scope as ECLA classification H01L29/788B2.










Patents under this class:

Patent Number Title Of Patent Date Issued
8659952 Method of operating non-volatile memory Feb. 25, 2014
8492794 Vertical polysilicon-germanium heterojunction bipolar transistor Jul. 23, 2013
8378341 Semiconductor device and method of manufacturing semiconductor device Feb. 19, 2013
7777302 Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structure Aug. 17, 2010
7671401 Non-volatile memory in CMOS logic process Mar. 2, 2010
7442977 Gated field effect devices Oct. 28, 2008
7411836 Method of operating non-volatile memory Aug. 12, 2008
7247924 Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures Jul. 24, 2007
6927128 Method for manufacturing low voltage flash memory Aug. 9, 2005
6818558 Method of manufacturing a dielectric layer for a silicon-oxide-nitride-oxide-silicon (SONOS) type devices Nov. 16, 2004
6772992 Memory cell structure integrated on semiconductor Aug. 10, 2004
6709928 Semiconductor device having silicon-rich layer and method of manufacturing such a device Mar. 23, 2004
5726070 Silicon-rich tunnel oxide formed by oxygen implantation for flash EEPROM Mar. 10, 1998
5656544 Process for forming a polysilicon electrode in a trench Aug. 12, 1997
5617351 Three-dimensional direct-write EEPROM arrays and fabrication methods Apr. 1, 1997
5481128 Structure for flash memory cell Jan. 2, 1996
5468663 Method of fabricating three-dimensional direct-write EEPROM arrays Nov. 21, 1995
5467305 Three-dimensional direct-write EEPROM arrays and fabrication methods Nov. 14, 1995
5399516 Method of making shadow RAM cell having a shallow trench EEPROM Mar. 21, 1995
5371027 Method of manufacturing a semiconductor device having a non-volatile memory with an improved tunnel oxide Dec. 6, 1994
5298447 Method of fabricating a flash memory cell Mar. 29, 1994
5208772 Gate EEPROM cell May. 4, 1993
4939559 Dual electron injector structures using a conductive oxide between injectors Jul. 3, 1990
4729115 Non-volatile dynamic random access memory cell Mar. 1, 1988
4717943 Charge storage structure for nonvolatile memories Jan. 5, 1988
4688078 Partially relaxable composite dielectric structure Aug. 18, 1987
4683554 Direct write nonvolatile memory cells Jul. 28, 1987
4665417 Non-volatile dynamic random access memory cell May. 12, 1987
4616245 Direct-write silicon nitride EEPROM cell Oct. 7, 1986
4471471 Non-volatile RAM device Sep. 11, 1984
4458407 Process for fabricating semi-conductive oxide between two poly silicon gate electrodes Jul. 10, 1984
4399522 Non-volatile static RAM cell with enhanced conduction insulators Aug. 16, 1983
4388704 Non-volatile RAM cell with enhanced conduction insulators Jun. 14, 1983
4380057 Electrically alterable double dense memory Apr. 12, 1983
4336603 Three terminal electrically erasable programmable read only memory Jun. 22, 1982
4334347 Method of forming an improved gate member for a gate injected floating gate memory device Jun. 15, 1982
4334292 Low voltage electrically erasable programmable read only memory Jun. 8, 1982
4253106 Gate injected floating gate memory device Feb. 24, 1981











 
 
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