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Class Information
Number: 257/E29.3
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With floating gate (epo)
Description: This subclass is indented under subclass E29.255. This subclass is substantially the same in scope as ECLA classification H01L29/788.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.302 Hi-lo programming levels only (epo) 308
257/E29.301 Programmable by two single electrons (epo) 84
257/E29.308 Programmable with more than two possible different levels (epo) 180


Patents under this class:
1 2 3 4 5 6 7 8 9 10

Patent Number Title Of Patent Date Issued
8710573 Nonvolatile semiconductor memory device and method for manufacturing the same Apr. 29, 2014
8709892 Nanoparticles in a flash memory using chaperonin proteins Apr. 29, 2014
8692308 Semiconductor device including a floating gate Apr. 8, 2014
8692309 Semiconductor device Apr. 8, 2014
8686488 Nonvolatile semiconductor memory device and method of manufacturing the same Apr. 1, 2014
8685826 Method for manufacturing nano-crystalline silicon material from chloride chemistries for the semiconductor integrated circuits Apr. 1, 2014
8674427 Nonvolatile memory device and method of manufacturing thereof Mar. 18, 2014
8674424 Memory device with charge storage layers at the sidewalls of the gate and method for fabricating the same Mar. 18, 2014
8674414 Three-dimensional nonvolatile memory devices including interposed floating gates Mar. 18, 2014
8669607 Methods and apparatus for non-volatile memory cells with increased programming efficiency Mar. 11, 2014
8664712 Flash memory cell on SeOI having a second control gate buried under the insulating layer Mar. 4, 2014
8664711 Dielectric stack Mar. 4, 2014
8664710 Non-volatile memory and manufacturing method thereof Mar. 4, 2014
8664708 EEPROM cell Mar. 4, 2014
8664640 Non-volatile memory device including semiconductor charge-trapping material particles Mar. 4, 2014
8659067 EEPROM cell Feb. 25, 2014
8659114 Semiconductor device Feb. 25, 2014
8653579 Semiconductor storage device Feb. 18, 2014
8653567 Chemically sensitive sensor with lightly doped drains Feb. 18, 2014
8653577 Nonvolatile semiconductor memory device Feb. 18, 2014
8653578 Semiconductor device comprising string structures formed on active region Feb. 18, 2014
8643078 Semiconductor structure and manufacturing method of the same Feb. 4, 2014
8643076 Non-volatile memory device and method for fabricating the same Feb. 4, 2014
8637914 Memory cells having a plurality of control gates and memory cells having a control gate and a shield Jan. 28, 2014
8629491 Semiconductor memory device and method of manufacturing the same Jan. 14, 2014
8618596 Semiconductor memory device and method of fabricating the same Dec. 31, 2013
8614477 Nonvolatile semiconductor memory device Dec. 24, 2013
8614125 Nonvolatile memory devices and methods of forming the same Dec. 24, 2013
8610194 Semiconductor device with vertical gate and method for fabricating the same Dec. 17, 2013
8610195 Non-volatile memory devices and methods of manufacturing the same Dec. 17, 2013
8610197 Nonvolatile memory having gate electrode and charge storage layer formed respectively over opposite surfaces of semiconductor layer Dec. 17, 2013
8604535 Non-volatile memory device and method of manufacturing the same Dec. 10, 2013
8604534 Semiconductor storage device Dec. 10, 2013
8592889 Memory structure Nov. 26, 2013
8587036 Non-volatile memory and fabricating method thereof Nov. 19, 2013
8575684 Nonvolatile semiconductor memory device Nov. 5, 2013
8575682 Three dimensional semiconductor memory devices and methods of forming the same Nov. 5, 2013
8575680 Semiconductor device having air gap and method of fabricating the same Nov. 5, 2013
8569822 Memory structure Oct. 29, 2013
8564043 EEPROM cell structure and a method of fabricating the same Oct. 22, 2013
8558301 Semiconductor device, and method for manufacturing semiconductor device Oct. 15, 2013
8552488 Nonvolatile memory devices having gate structures doped by nitrogen Oct. 8, 2013
8546909 Nonvolatile semiconductor memory device having air gap proximate to element isolation region and method of manufacturing the same Oct. 1, 2013
8546868 Non-volatile semiconductor memory device and method of manufacturing the same Oct. 1, 2013
8541863 Data retention in a single poly EPROM cell Sep. 24, 2013
8536639 I-shape floating gate for flash memory device and fabricating the same Sep. 17, 2013
8530310 Memory cell with improved retention Sep. 10, 2013
8530952 Systems, methods and devices for a memory having a buried select line Sep. 10, 2013
8525249 Semiconductor memory device and method of fabricating the same Sep. 3, 2013
8519469 Select gates for memory Aug. 27, 2013

1 2 3 4 5 6 7 8 9 10










 
 
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