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Class Information
Number: 257/E29.299
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > Thin-film transistor (epo) > Characterized by property or structure of channel or contact thereto (epo)
Description: This subclass is indented under subclass E29.273. This subclass is substantially the same in scope as ECLA classification H01L29/786H.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8686528 Semiconductor device Apr. 1, 2014
8624238 Thin-film transistor substrate and method of fabricating the same Jan. 7, 2014
8586427 Thin film transistors and methods of manufacturing thin film transistors Nov. 19, 2013
8519453 Thin film transistor device with metallic electrodes Aug. 27, 2013
8492770 Thin film transistor and method of manufacturing the same Jul. 23, 2013
8461594 Thin film transistor and display device Jun. 11, 2013
8461625 Carrier mobility enhanced channel devices and method of manufacture Jun. 11, 2013
8450742 Thin film transistor having semiconductor with different crystallinities and manufacturing method thereof May. 28, 2013
8426917 Body-tied asymmetric P-type field effect transistor Apr. 23, 2013
8378351 Thin film transistor, display device, and electronic unit Feb. 19, 2013
8293591 Field effect transistor comprising gold layer, microfluidic device comprising the field effect transistor, and method of detecting analyte having thiol group using the field effect transistor Oct. 23, 2012
8154024 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of am Apr. 10, 2012
8154011 Thin film transistor Apr. 10, 2012
8148217 Semiconductor manufacturing method and semiconductor device Apr. 3, 2012
8043904 Semiconductor manufacturing method and semiconductor device Oct. 25, 2011
8022410 Thin film transistors Sep. 20, 2011
7977755 Suspended nanochannel transistor structure and method for fabricating the same Jul. 12, 2011
7968409 Mixed-signal semiconductor platform incorporating fully-depleted castellated-gate MOSFET device and method of manufacture thereof Jun. 28, 2011
7964970 Technique for enhancing transistor performance by transistor specific contact design Jun. 21, 2011
7956361 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of am Jun. 7, 2011
7935582 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of am May. 3, 2011
7902558 Substrate of liquid crystal device and method for manufacturing the same Mar. 8, 2011
7781800 Embedded silicon germanium using a double buried oxide silicon-on-insulator wafer Aug. 24, 2010
7728363 Protective structure for semiconductor sensors Jun. 1, 2010
7719058 Mixed-signal semiconductor platform incorporating fully-depleted castellated-gate MOSFET device and method of manufacture thereof May. 18, 2010
7714387 Semiconductor device with thin-film transistors and method of fabricating the same May. 11, 2010
7662679 Semiconductor manufacturing method and semiconductor device Feb. 16, 2010
7615782 Thin film transistor substrate and liquid crystal display panel having sub-pixels Nov. 10, 2009
7612416 Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same Nov. 3, 2009
7605413 High voltage devices Oct. 20, 2009
7482615 High performance MOSFET comprising stressed phase change material Jan. 27, 2009
7462862 Transistor using an isovalent semiconductor oxide as the active channel layer Dec. 9, 2008
7446350 Embedded silicon germanium using a double buried oxide silicon-on-insulator wafer Nov. 4, 2008
7339212 p channel filed effect transistor and sensor using the same Mar. 4, 2008
7309895 Semiconductor device Dec. 18, 2007
7268367 Thin film devices for flat panel displays and methods for forming the same Sep. 11, 2007
7256455 Double gate semiconductor device having a metal gate Aug. 14, 2007
7211864 Fully-depleted castellated gate MOSFET device and method of manufacture thereof May. 1, 2007
7176092 Gate electrode for a semiconductor fin device Feb. 13, 2007
7141822 Semiconductor device and method for manufacturing the same Nov. 28, 2006
7132690 Multi-channel type thin film transistor and method of fabricating the same Nov. 7, 2006
7075150 Ultra-thin Si channel MOSFET using a self-aligned oxygen implant and damascene technique Jul. 11, 2006
7074656 Doping of semiconductor fin devices Jul. 11, 2006
7074660 FinFet device and method of fabrication Jul. 11, 2006
7074657 Low-power multiple-channel fully depleted quantum well CMOSFETs Jul. 11, 2006
7074623 Methods of forming strained-semiconductor-on-insulator finFET device structures Jul. 11, 2006
7071504 Thin film transistor device and method of manufacturing the same Jul. 4, 2006
7071064 U-gate transistors and methods of fabrication Jul. 4, 2006
7064019 Implanted asymmetric doped polysilicon gate FinFET Jun. 20, 2006
7061055 Double-gate field-effect transistor, integrated circuit using the transistor and method of manufacturing the same Jun. 13, 2006

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