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Class Information
Number: 257/E29.298
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > Thin-film transistor (epo) > Comprising group iv non-si semiconductor materials or alloys (e.g., ge, sin alloy, sic alloy) (epo) > With multilayer structure or superlattice structure (epo)
Description: This subclass is indented under subclass E29.297. This subclass is substantially the same in scope as ECLA classification H01L29/786G2.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8664722 Thin film transistor with metal silicide layer Mar. 4, 2014
8575594 Light emitting diode having a barrier layer with a superlattice structure Nov. 5, 2013
8530975 Semiconductor device with gate edge protrusion Sep. 10, 2013
8461632 SiC semiconductor device and method of manufacturing the same Jun. 11, 2013
8395163 Semiconductor device Mar. 12, 2013
8309986 Tri-gate field-effect transistors formed by aspect ratio trapping Nov. 13, 2012
8278686 Structure and method for forming planar gate field effect transistor with low resistance channel region Oct. 2, 2012
8269256 Semiconductor device and manufacturing method thereof Sep. 18, 2012
8242502 TFT array substrate having conductive layers containing molybdenum nitride and copper alloy Aug. 14, 2012
8154008 Light emitting diode with improved structure Apr. 10, 2012
8134189 Semiconductor device and method of manufacturing the same Mar. 13, 2012
8115209 Dual gate layout for thin film transistor Feb. 14, 2012
8106464 Semiconductor device having bar type active pattern Jan. 31, 2012
7977706 Tri-gate field-effect transistors formed by aspect ratio trapping Jul. 12, 2011
7923785 Field effect transistor having increased carrier mobility Apr. 12, 2011
7859065 Fin-type field effect transistor and semiconductor device Dec. 28, 2010
7829352 Fabrication of nano-object array Nov. 9, 2010
7808003 Silicon carbide semiconductor device Oct. 5, 2010
7799592 Tri-gate field-effect transistors formed by aspect ratio trapping Sep. 21, 2010
7749842 Structures and methods for making strained MOSFETs Jul. 6, 2010
7691688 Strained silicon CMOS on hybrid crystal orientations Apr. 6, 2010
7601998 Semiconductor memory device having metallization comprising select lines, bit lines and word lines Oct. 13, 2009
7557002 Methods of forming transistor devices Jul. 7, 2009
7541645 Metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions Jun. 2, 2009
7468538 Strained silicon on a SiGe on SOI substrate Dec. 23, 2008
7402505 Single electron devices formed by laser thermal annealing Jul. 22, 2008
7394111 Strained Si/SiGe structures by ion implantation Jul. 1, 2008
7381992 Silicon carbide power devices with self-aligned source and well regions Jun. 3, 2008
7375368 Superlattice for fabricating nanowires May. 20, 2008
7332412 Structure of strained silicon on insulator and method of manufacturing the same Feb. 19, 2008
7223611 Fabrication of nanowires May. 29, 2007
7153763 Method for making a semiconductor device including band-engineered superlattice using intermediate annealing Dec. 26, 2006
7132298 Fabrication of nano-object array Nov. 7, 2006
7074623 Methods of forming strained-semiconductor-on-insulator finFET device structures Jul. 11, 2006
7042052 Transistor constructions and electronic devices May. 9, 2006
7037794 Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drain May. 2, 2006
7033913 Semiconductor device and method of manufacturing the same Apr. 25, 2006
7033868 Semiconductor device and method of manufacturing same Apr. 25, 2006
7029964 Method of manufacturing a strained silicon on a SiGe on SOI substrate Apr. 18, 2006
7023010 Si/C superlattice useful for semiconductor devices Apr. 4, 2006
7022530 Semiconductor device and method for fabricating the same Apr. 4, 2006
7019380 Semiconductor device Mar. 28, 2006
7005676 Semiconductor device manufacturing method Feb. 28, 2006
6998683 TFT-based common gate CMOS inverters, and computer systems utilizing novel CMOS inverters Feb. 14, 2006
6995430 Strained-semiconductor-on-insulator device structures Feb. 7, 2006
6989570 Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuit Jan. 24, 2006
6987065 Method of manufacturing self aligned electrode with field insulation Jan. 17, 2006
6972461 Channel MOSFET with strained silicon channel on strained SiGe Dec. 6, 2005
6969875 Buried channel strained silicon FET using a supply layer created through ion implantation Nov. 29, 2005
6958263 Methods of forming devices, constructions and systems comprising thyristors Oct. 25, 2005

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