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Class Information
Number: 257/E29.297
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > Thin-film transistor (epo) > Comprising group iv non-si semiconductor materials or alloys (e.g., ge, sin alloy, sic alloy) (epo)
Description: This subclass is indented under subclass E29.273. This subclass is substantially the same in scope as ECLA classification H01L29/786G.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.298 With multilayer structure or superlattice structure (epo) 128


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8637851 Graphene device having physical gap Jan. 28, 2014
8614471 Collections of laterally crystallized semiconductor islands for use in thin film transistors Dec. 24, 2013
8525330 Connecting member for connecting a semiconductor element and a frame, formed of an Al-based layer and first and second Zn-based layers provided on surfaces of the Al-based layer Sep. 3, 2013
8487356 Graphene device and method of manufacturing the same Jul. 16, 2013
8461625 Carrier mobility enhanced channel devices and method of manufacture Jun. 11, 2013
8426243 Amorphous oxide semiconductor and thin film transistor using the same Apr. 23, 2013
8421191 Monolayer dopant embedded stressor for advanced CMOS Apr. 16, 2013
8399878 Silicon/germanium oxide particle inks and processes for forming solar cell components and for forming optical components Mar. 19, 2013
8395163 Semiconductor device Mar. 12, 2013
8357995 Semiconductor element Jan. 22, 2013
8350353 Method of manufacturing silicon carbide semiconductor device Jan. 8, 2013
8283669 Semiconductor device and method of manufacturing same Oct. 9, 2012
8278686 Structure and method for forming planar gate field effect transistor with low resistance channel region Oct. 2, 2012
8263423 Silicon/germanium oxide particle inks and processes for forming solar cell components and for forming optical components Sep. 11, 2012
8134189 Semiconductor device and method of manufacturing the same Mar. 13, 2012
8101980 Graphene device and method of manufacturing the same Jan. 24, 2012
8102000 P-channel germanium on insulator (GOI) one transistor memory cell Jan. 24, 2012
8097530 Method for manufacturing SIC semiconductor device Jan. 17, 2012
7993947 Silicon/germanium oxide particle inks, inkjet printing and processes for doping semiconductor substrates Aug. 9, 2011
7944024 Semiconductor device and manufacturing method of the same May. 17, 2011
7919813 Method of manufacturing semiconductor device and semiconductor device Apr. 5, 2011
7868425 Semiconductor device and manufacturing method of the same Jan. 11, 2011
7855127 Method for manufacturing semiconductor substrate Dec. 21, 2010
7808003 Silicon carbide semiconductor device Oct. 5, 2010
7800185 Closed trench MOSFET with floating trench rings as termination Sep. 21, 2010
7781800 Embedded silicon germanium using a double buried oxide silicon-on-insulator wafer Aug. 24, 2010
7772589 High performance flexible substrate thin film transistor and method Aug. 10, 2010
7754526 Method for making thin film transistor Jul. 13, 2010
7622774 Method of manufacturing semiconductor device and semiconductor device Nov. 24, 2009
7579618 Carbon nanotube resonator transistor and method of making same Aug. 25, 2009
7550796 Germanium semiconductor device and method of manufacturing the same Jun. 23, 2009
7531392 Multi-orientation semiconductor-on-insulator (SOI) substrate, and method of fabricating same May. 12, 2009
7508000 Method of fabricating self-aligned silicon carbide semiconductor devices Mar. 24, 2009
7482656 Method and structure to form self-aligned selective-SOI Jan. 27, 2009
7446350 Embedded silicon germanium using a double buried oxide silicon-on-insulator wafer Nov. 4, 2008
7436046 Semiconductor device and manufacturing method of the same Oct. 14, 2008
7381992 Silicon carbide power devices with self-aligned source and well regions Jun. 3, 2008
7365362 Semiconductor device and method of fabricating semiconductor device using oxidation Apr. 29, 2008
7288819 Stable PD-SOI devices and methods Oct. 30, 2007
7253045 Selective P-channel V.sub.T adjustment in SiGe system for leakage optimization Aug. 7, 2007
7074623 Methods of forming strained-semiconductor-on-insulator finFET device structures Jul. 11, 2006
7075150 Ultra-thin Si channel MOSFET using a self-aligned oxygen implant and damascene technique Jul. 11, 2006
7034337 Semiconductor device and method of manufacturing the same Apr. 25, 2006
7034362 Double silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) structures Apr. 25, 2006
7023010 Si/C superlattice useful for semiconductor devices Apr. 4, 2006
7015507 Thin film transistor and method of fabricating the same Mar. 21, 2006
7009209 Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications Mar. 7, 2006
7005302 Semiconductor on insulator substrate and devices formed therefrom Feb. 28, 2006
6995432 Semiconductor device having a gate oxide film with some NTFTS with LDD regions and no PTFTS with LDD regions Feb. 7, 2006
6995430 Strained-semiconductor-on-insulator device structures Feb. 7, 2006

1 2 3 4 5










 
 
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