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Class Information
Number: 257/E29.286
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > Thin-film transistor (epo) > Silicon transistor (epo) > Monocrystalline only (epo)
Description: This subclass is indented under subclass E29.285. This subclass is substantially the same in scope as ECLA classification H01L29/786E2.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.287 Sos transistor (epo) 94


Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8624400 Semiconductor device and method for manufacturing the same Jan. 7, 2014
8569803 BEOL compatible FET structrure Oct. 29, 2013
8541843 Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same Sep. 24, 2013
8492843 Lateral hyperabrupt junction varactor diode in an SOI substrate Jul. 23, 2013
8482069 Nonvolatile memory and electronic apparatus Jul. 9, 2013
8476708 Semiconductor memory device having a circuit formed on a single crystal semiconductor layer with varied germanium concentration Jul. 2, 2013
8441042 BEOL compatible FET structure May. 14, 2013
8431994 Thin-BOX metal backgate extremely thin SOI device Apr. 30, 2013
8389995 Epitaxial solid-state semiconducting heterostructures and method for making same Mar. 5, 2013
8349719 Semiconductor device and method for fabricating the same Jan. 8, 2013
8293627 Method for manufacturing a mono-crystalline semiconductor layer on a substrate Oct. 23, 2012
8288821 SOI (silicon on insulator) substrate improvements Oct. 16, 2012
8269278 Semiconductor device with .pi.-shaped semiconductor conductive layer and method for making the same Sep. 18, 2012
8242561 Semiconductor devices with improved self-aligned contact areas Aug. 14, 2012
8222696 Semiconductor device having buried oxide film Jul. 17, 2012
8174074 Asymmetric embedded silicon germanium field effect transistor May. 8, 2012
8169024 Method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantation May. 1, 2012
8138547 MOSFET on silicon-on-insulator REDX with asymmetric source-drain contacts Mar. 20, 2012
8097515 Self-aligned contacts for nanowire field effect transistors Jan. 17, 2012
8048728 Display device, method for manufacturing display device, and SOI substrate Nov. 1, 2011
8008744 Selective STI stress relaxation through ion implantation Aug. 30, 2011
7999251 Nanowire MOSFET with doped epitaxial contacts for source and drain Aug. 16, 2011
7884377 Light emitting device, method of manufacturing the same and monolithic light emitting diode array Feb. 8, 2011
7872309 Self-aligned lightly doped drain recessed-gate thin-film transistor Jan. 18, 2011
7859055 Thin film transistor Dec. 28, 2010
7816735 Integrated circuit devices including a transcription-preventing pattern Oct. 19, 2010
7768070 Semiconductor devices having field effect transistors Aug. 3, 2010
7727856 Selective STI stress relaxation through ion implantation Jun. 1, 2010
7652332 Extremely-thin silicon-on-insulator transistor with raised source/drain Jan. 26, 2010
7638805 Method of fabricating a semiconductor device Dec. 29, 2009
7579246 Semiconductor device manufacturing method including oblique ion implantation process and reticle pattern forming method Aug. 25, 2009
7557002 Methods of forming transistor devices Jul. 7, 2009
7538393 Field insulator FET device and fabrication method thereof May. 26, 2009
7534687 Semiconductor device and method for manufacturing the same May. 19, 2009
7531392 Multi-orientation semiconductor-on-insulator (SOI) substrate, and method of fabricating same May. 12, 2009
7382040 Organic field effect transistor and display using same Jun. 3, 2008
7074655 Gate material for semiconductor device fabrication Jul. 11, 2006
7067404 Thin film semiconductor device having a gate electrode insulator formed through high-heat oxidization Jun. 27, 2006
7064399 Advanced CMOS using super steep retrograde wells Jun. 20, 2006
7061049 Semiconductor device using SOI device and semiconductor integrated circuit using the semiconductor device Jun. 13, 2006
7026688 Field effect transistors having multiple stacked channels Apr. 11, 2006
7018873 Method of making a device threshold control of front-gate silicon-on-insulator MOSFET using a self-aligned back-gate Mar. 28, 2006
7015549 Integrated circuit structures including epitaxial silicon layers that extend from an active region through an insulation layer to a substrate Mar. 21, 2006
7015147 Fabrication of silicon-on-nothing (SON) MOSFET fabrication using selective etching of Si.sub.1-xGe.sub.x layer Mar. 21, 2006
7008834 Method for manufacturing a semiconductor device Mar. 7, 2006
7005356 Schottky barrier transistor and method of manufacturing the same Feb. 28, 2006
7002207 Field effect transistors having multiple stacked channels Feb. 21, 2006
7001822 Semiconductor device formed on insulating layer and method of manufacturing the same Feb. 21, 2006
6998639 Method for manufacturing a semiconductor device Feb. 14, 2006
6995452 MOSFET device with nanoscale channel and method of manufacturing the same Feb. 7, 2006

1 2 3 4 5 6 7










 
 
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