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Class Information
Number: 257/E29.284
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > Thin-film transistor (epo) > With supplementary region or layer in thin film or in insulated bulk substrate supporting it for controlling or increasing voltage resistance of device (epo) > With drain or source connected to bulk conducting substrate (epo)
Description: This subclass is indented under subclass E29.276. This subclass is substantially the same in scope as ECLA classification H01L29/786B7.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8227864 CMOS semiconductor device Jul. 24, 2012
7791073 Thin film transistor Sep. 7, 2010
7755075 Phase-change memory device with minimized reduction in thermal efficiency and method of manufacturing the same Jul. 13, 2010
7750415 Structure and method for making high density MOSFET circuits with different height contact lines Jul. 6, 2010
7701010 Method of fabricating transistor including buried insulating layer and transistor fabricated using the same Apr. 20, 2010
7582546 Device with damaged breakdown layer Sep. 1, 2009
7534687 Semiconductor device and method for manufacturing the same May. 19, 2009
7074657 Low-power multiple-channel fully depleted quantum well CMOSFETs Jul. 11, 2006
7033868 Semiconductor device and method of manufacturing same Apr. 25, 2006
7019364 Semiconductor substrate having pillars within a closed empty space Mar. 28, 2006
7015147 Fabrication of silicon-on-nothing (SON) MOSFET fabrication using selective etching of Si.sub.1-xGe.sub.x layer Mar. 21, 2006
7015549 Integrated circuit structures including epitaxial silicon layers that extend from an active region through an insulation layer to a substrate Mar. 21, 2006
6989570 Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuit Jan. 24, 2006
6979846 Semiconductor device and manufacturing method thereof Dec. 27, 2005
6924183 Manufacturing method for SOI semiconductor device, and SOI semiconductor device Aug. 2, 2005
6919238 Silicon on insulator (SOI) transistor and methods of fabrication Jul. 19, 2005
6906384 Semiconductor device having one of patterned SOI and SON structure Jun. 14, 2005
6893928 Semiconductor device and method of manufacturing the same May. 17, 2005
6885041 Semiconductor device, method for fabricating the semiconductor device and semiconductor integrated circuit Apr. 26, 2005
6873013 Silicon-on-insulator structure and method of reducing backside drain-induced barrier lowering Mar. 29, 2005
6873012 SOI component Mar. 29, 2005
6821856 Method of manufacturing semiconductor device having source/drain regions included in a semiconductor layer formed over an isolation insulating film and a semiconductor device fabricated thereb Nov. 23, 2004
6649979 Method of manufacturing MOSFET and structure thereof Nov. 18, 2003
6645796 Method and semiconductor structure for implementing reach through buried interconnect for silicon-on-insulator (SOI) devices Nov. 11, 2003
6646352 Gate electrode comprising body centered cubic tantalum and tantalum nitride Nov. 11, 2003
6642133 Silicon-on-insulator structure and method of reducing backside drain-induced barrier lowering Nov. 4, 2003
6642536 Hybrid silicon on insulator/bulk strained silicon technology Nov. 4, 2003
6630699 Transistor device having an isolation structure located under a source region, drain region and channel region and a method of manufacture thereof Oct. 7, 2003
6570217 Semiconductor device and method of manufacturing the same May. 27, 2003
6534831 Semiconductor integrated circuit device Mar. 18, 2003
6509586 Semiconductor device, method for fabricating the semiconductor device and semiconductor integrated circuit Jan. 21, 2003
6483171 Vertical sub-micron CMOS transistors on (110), (111), (311), (511), and higher order surfaces of bulk, SOI and thin film structures and method of forming same Nov. 19, 2002
6407427 SOI wafer device and a method of fabricating the same Jun. 18, 2002
6403981 Double gate transistor having a silicon/germanium channel region Jun. 11, 2002
6391695 Double-gate transistor formed in a thermal process May. 21, 2002
6383904 Fabrication of self-aligned front gate and back gate of a field effect transistor in semiconductor on insulator May. 7, 2002
6306692 Coplanar type polysilicon thin film transistor and method of manufacturing the same Oct. 23, 2001
6300666 Method for forming a frontside contact to the silicon substrate of a SOI wafer in the presence of planarized contact dielectrics Oct. 9, 2001
6153912 SOI with conductive metal substrate used as VSS connection Nov. 28, 2000
6022765 Semiconductor device having a SOI structure and a manufacturing method thereof Feb. 8, 2000
6002154 High-frequency MOSFET Dec. 14, 1999
5985708 Method of manufacturing vertical power device Nov. 16, 1999
5945712 Semiconductor device having a SOI structure with substrate bias formed through the insulator and in contact with one of the active diffusion layers Aug. 31, 1999
5929488 Metal-oxide semiconductor device Jul. 27, 1999
5686755 LDMOS resurf high voltage transistor Nov. 11, 1997
5650650 High speed semiconductor device with a metallic substrate Jul. 22, 1997
5612230 Process for manufacturing a semiconductor device by applying a non-single-crystalline material on a sidewall inside of an opening portion for growing a single-crystalline semiconductor body Mar. 18, 1997
5554546 Method of fabricating a high voltage transistor Sep. 10, 1996
5548150 Field effect transistor Aug. 20, 1996
5428237 Semiconductor device having an insulated gate transistor Jun. 27, 1995

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