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Class Information
Number: 257/E29.279
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > Thin-film transistor (epo) > With supplementary region or layer in thin film or in insulated bulk substrate supporting it for controlling or increasing voltage resistance of device (epo) > Characterized by drain or source properties (epo) > With ldd structure or extension or offset region or characterized by doping profile (epo) > Asymmetrical source and drain regions (epo)
Description: This subclass is indented under subclass E29.278. This subclass is substantially the same in scope as ECLA classification H01L29/786B4B2.










Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8604533 Semiconductor device and fabricating method thereof Dec. 10, 2013
8524547 Fin-type field effect transistor Sep. 3, 2013
8518754 Organic EL display and method of manufacturing the same Aug. 27, 2013
8513738 ESD field-effect transistor and integrated diffusion resistor Aug. 20, 2013
8482058 Semiconductor device including a power MISFET Jul. 9, 2013
8482065 MOS transistor with a reduced on-resistance and area product Jul. 9, 2013
8455309 Method for manufacturing a semiconductor device Jun. 4, 2013
8426279 Asymmetric transistor Apr. 23, 2013
8410549 Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocket Apr. 2, 2013
8404547 Semiconductor device and manufacturing method thereof Mar. 26, 2013
8377785 Planar field effect transistor structure having an angled crystallographic etch-defined source/drain recess and a method of forming the transistor structure Feb. 19, 2013
8362491 Liquid crystal display device and method for fabricating the same Jan. 29, 2013
8362560 Field effects transistor with asymmetric abrupt junction implant Jan. 29, 2013
8283722 Semiconductor device having an enhanced well region Oct. 9, 2012
8188476 Organic EL display and method of manufacturing the same May. 29, 2012
8158482 Asymmetric transistor devices formed by asymmetric spacers and tilted implantation Apr. 17, 2012
8143680 Gated diode with non-planar source region Mar. 27, 2012
8138030 Asymmetric finFET device with improved parasitic resistance and capacitance Mar. 20, 2012
8106443 Non-volatile semiconductor memory device Jan. 31, 2012
8106439 Fin-type field effect transistor Jan. 31, 2012
7994612 FinFETs single-sided implant formation Aug. 9, 2011
7964910 Planar field effect transistor structure having an angled crystallographic etch-defined source/drain recess and a method of forming the transistor structure Jun. 21, 2011
7960788 Replacing symmetric transistors with asymmetric transistors Jun. 14, 2011
7947557 Heterojunction tunneling field effect transistors, and methods for fabricating the same May. 24, 2011
7947984 Liquid crystal display device and method for fabricating the same May. 24, 2011
7935998 Self-aligned body contact for a semiconductor-on-insulator trench device and method of fabricating same May. 3, 2011
7892928 Method of forming asymmetric spacers and methods of fabricating semiconductor device using asymmetric spacers Feb. 22, 2011
7858469 Method for forming a trigger device for ESD protection circuit Dec. 28, 2010
7855118 Drive current increase in transistors by asymmetric amorphization implantation Dec. 21, 2010
7824973 Method of forming a semiconductor device and semiconductor device thereof Nov. 2, 2010
7772624 Image sensors and methods of fabricating same Aug. 10, 2010
7768006 Field effect structure and method including spacer shaped metal gate with asymmetric source and drain regions Aug. 3, 2010
7745293 Method for manufacturing a thin film transistor including forming impurity regions by diagonal doping Jun. 29, 2010
7732877 Gated diode with non-planar source region Jun. 8, 2010
7705358 Semiconductor device and method of manufacturing the same Apr. 27, 2010
7655991 CMOS device with stressed sidewall spacers Feb. 2, 2010
7642141 Manufacturing method for display device Jan. 5, 2010
7618854 High frequency MOS transistor, method of forming the same, and method of manufacturing a semiconductor device including the same Nov. 17, 2009
7525150 High voltage double diffused drain MOS transistor with medium operation voltage Apr. 28, 2009
7476937 Semiconductor device and method of fabricating the same Jan. 13, 2009
7456911 Semiconductor device Nov. 25, 2008
7420241 Semiconductor memory device and method of manufacturing the same Sep. 2, 2008
7417252 Flat panel display Aug. 26, 2008
7413955 Transistor for memory device and method for manufacturing the same Aug. 19, 2008
7402862 Multi-bit non-volatile memory device having a dual-gate and method of manufacturing the same, and method of multi-bit cell operation Jul. 22, 2008
7371623 Semiconductor device with semiconductor circuit comprising semiconductor units, and method for fabricating it May. 13, 2008
7372095 Integrated semiconductor circuit comprising a transistor and a strip conductor May. 13, 2008
7312504 Transistor for memory device and method for manufacturing the same Dec. 25, 2007
7307282 Thin film transistors and semiconductor device Dec. 11, 2007
7306995 Reduced hydrogen sidewall spacer oxide Dec. 11, 2007

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