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Class Information
Number: 257/E29.276
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > Thin-film transistor (epo) > With supplementary region or layer in thin film or in insulated bulk substrate supporting it for controlling or increasing voltage resistance of device (epo)
Description: This subclass is indented under subclass E29.273. This subclass is substantially the same in scope as ECLA classification H01L29/786B.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.277 Characterized by drain or source properties (epo) 390
257/E29.281 For preventing kink or snapback effect (e.g., discharging minority carriers of channel region for preventing bipolar effect) (epo) 339
257/E29.28 For preventing leakage current (epo) 217
257/E29.284 With drain or source connected to bulk conducting substrate (epo) 58
257/E29.282 With light shield (epo) 192
257/E29.283 With supplementary region or layer for improving flatness of device (epo) 129


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8633492 Semiconductor device and method for manufacturing the same Jan. 21, 2014
8618607 Semiconductor devices formed on a continuous active region with an isolating conductive structure positioned between such semiconductor devices, and methods of making same Dec. 31, 2013
8519453 Thin film transistor device with metallic electrodes Aug. 27, 2013
8501595 Thin film containing nanocrystal particles and method for preparing the same Aug. 6, 2013
8410541 CMOSFET device with controlled threshold voltage characteristics and method of fabricating the same Apr. 2, 2013
8384078 Organic light emitting display device and method of manufacturing the same Feb. 26, 2013
8384085 Semiconductor device and method for manufacturing the same Feb. 26, 2013
8053778 Semiconductor device and a method for manufacturing the same Nov. 8, 2011
7863619 Semiconductor device and a method for manufacturing the same Jan. 4, 2011
7834340 Phase change memory devices and methods of fabricating the same Nov. 16, 2010
7772620 Junction field effect transistor using a silicon on insulator architecture Aug. 10, 2010
7754595 Method for manufacturing semiconductor device Jul. 13, 2010
7727835 SOI device with charging protection and methods of making same Jun. 1, 2010
7696510 Integrated circuit including memory having reduced cross talk Apr. 13, 2010
7671355 Method of fabricating a phase change memory and phase change memory Mar. 2, 2010
7655941 Phase change memory device and method for fabricating the same Feb. 2, 2010
7652307 Semiconductor device with two overlapping diffusion layers held at floating voltage for improving withstand voltage Jan. 26, 2010
7638788 Phase change memory device and method of forming the same Dec. 29, 2009
7514748 Semiconductor device Apr. 7, 2009
7061049 Semiconductor device using SOI device and semiconductor integrated circuit using the semiconductor device Jun. 13, 2006
7053426 Semiconductor device with heat sink May. 30, 2006
7045469 Method of forming a buffer dielectric layer in a semiconductor device and a method of manufacturing a thin film transistor using the same May. 16, 2006
7009251 SOI device with reduced junction capacitance Mar. 7, 2006
6919236 Biased, triple-well fully depleted SOI structure, and various methods of making and operating same Jul. 19, 2005
6900083 Method of forming multi-layers for a thin film transistor May. 31, 2005
6891236 Semiconductor device and method of fabricating the same May. 10, 2005
6867104 Method to form a structure to decrease area capacitance within a buried insulator device Mar. 15, 2005
6815773 Semiconductor device and method of manufacturing the same Nov. 9, 2004
6815735 Semiconductor device Nov. 9, 2004
6759282 Method and structure for buried circuits and devices Jul. 6, 2004
6746904 Electronic devices comprising thin film transistors Jun. 8, 2004
6734498 Insulated channel field effect transistor with an electric field terminal region May. 11, 2004
6727152 Semiconductor device Apr. 27, 2004
6717212 Leaky, thermally conductive insulator material (LTCIM) in semiconductor-on-insulator (SOI) structure Apr. 6, 2004
6627952 Silicon oxide insulator (SOI) semiconductor having selectively linked body Sep. 30, 2003
6596570 SOI device with reduced junction capacitance Jul. 22, 2003
6570223 Functional device and method of manufacturing the same May. 27, 2003
6558998 SOI type integrated circuit with a decoupling capacity and process for embodiment of such a circuit May. 6, 2003
6531738 High voltage SOI semiconductor device Mar. 11, 2003
6528853 Method and semiconductor structure for implementing dual plane body contacts for silicon-on-insulator (SOI) transistors Mar. 4, 2003
6515333 Removal of heat from SOI device Feb. 4, 2003
6489655 Integrated circuit with dynamic threshold voltage Dec. 3, 2002
6424009 Polysilicon insulator material in semiconductor-on-insulator (SOI) structure Jul. 23, 2002
6396079 Thin film semiconductor device having a buffer layer May. 28, 2002
6392277 Semiconductor device May. 21, 2002
6387739 Method and improved SOI body contact structure for transistors May. 14, 2002
6316808 T-Gate transistor with improved SOI body contact structure Nov. 13, 2001
6287901 Method and semiconductor structure for implementing dual plane body contacts for silicon-on-insulator (SOI) transistors Sep. 11, 2001
6265249 Method of manufacturing thin film transistors Jul. 24, 2001
6261878 Integrated circuit with dynamic threshold voltage Jul. 17, 2001

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