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Class Information
Number: 257/E29.274
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > Thin-film transistor (epo) > Vertical transistor (epo)
Description: This subclass is indented under subclass E29.273. This subclass is substantially the same in scope as ECLA classification H01L29/786C.










Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8575617 Thin film transistor array having improved connectivity between shorting bar and data lines Nov. 5, 2013
8564048 Contact barrier modulation of field effect transistors Oct. 22, 2013
8552472 Integrated circuit devices including vertical channel transistors with shield lines interposed between bit lines and methods of fabricating the same Oct. 8, 2013
8546863 Nonvolatile memory cell comprising a nanowire and manufacturing method thereof Oct. 1, 2013
8378417 Semiconductor device including a well potential supply device and a vertical MOS transistor Feb. 19, 2013
8343832 Semiconductor device and method of forming the same Jan. 1, 2013
8299516 Vertical thin film transistor and method for manufacturing the same and display device including the vertical thin film transistor and method for manufacturing the same Oct. 30, 2012
8263451 Epitaxy profile engineering for FinFETs Sep. 11, 2012
8253163 High voltage semiconductor device including a free wheel diode Aug. 28, 2012
8158468 Production method for surrounding gate transistor semiconductor device Apr. 17, 2012
8143125 Structure and method for forming a salicide on the gate electrode of a trench-gate FET Mar. 27, 2012
8138605 Multiple layer barrier metal for device component formed in contact trench Mar. 20, 2012
8067767 Display substrate having vertical thin film transistor having a channel including an oxide semiconductor pattern Nov. 29, 2011
7999309 Semiconductor device Aug. 16, 2011
7952173 Nanometric device with a hosting structure of nanometric elements May. 31, 2011
7936000 Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array May. 3, 2011
7933143 Capacitorless DRAM and methods of operating the same Apr. 26, 2011
7915693 Semiconductor device with fin and silicide structure Mar. 29, 2011
7910983 MOS transistor having an increased gate-drain capacitance Mar. 22, 2011
7910989 Semiconductor device with increased channel area and decreased leakage current Mar. 22, 2011
7859026 Vertical semiconductor device Dec. 28, 2010
7859065 Fin-type field effect transistor and semiconductor device Dec. 28, 2010
7829932 Semiconductor device Nov. 9, 2010
7709885 Access transistor for memory device May. 4, 2010
7709886 Thin film transistor and pixel structure May. 4, 2010
7709889 Semiconductor device with improved breakdown properties and manufacturing method thereof May. 4, 2010
7683438 Self-aligned double layered silicon-metal nanocrystal memory element, method for fabricating the same, and memory having the memory element Mar. 23, 2010
7679133 Vertical-type non-volatile memory devices Mar. 16, 2010
7670911 Method for manufacturing vertical MOS transistor Mar. 2, 2010
7663184 Memory and method of fabricating the same Feb. 16, 2010
7649222 Semiconductor device Jan. 19, 2010
7638374 Method of fabricating vertical thin film transistor Dec. 29, 2009
7589387 SONOS type two-bit FinFET flash memory cell Sep. 15, 2009
7588971 Method of fabricating vertical thin film transistor Sep. 15, 2009
7586130 Vertical field effect transistor using linear structure as a channel region and method for fabricating the same Sep. 8, 2009
7560773 Semiconductor device Jul. 14, 2009
7528439 Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array May. 5, 2009
7510955 Method of fabricating multi-fin field effect transistor Mar. 31, 2009
7508025 Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interpoly insulators Mar. 24, 2009
7504687 Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interpoly insulators Mar. 17, 2009
7476925 Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interploy insulators Jan. 13, 2009
7465983 Low tunnel barrier insulators Dec. 16, 2008
7446368 Deposition of metal oxide and/or low asymmetrical tunnel barrier interpoly insulators Nov. 4, 2008
7391072 Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers Jun. 24, 2008
7381595 High-density plasma oxidation for enhanced gate oxide performance Jun. 3, 2008
7372096 Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers May. 13, 2008
7372097 Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers May. 13, 2008
7364997 Methods of forming integrated circuitry and methods of forming local interconnects Apr. 29, 2008
7244977 Longitudinal MISFET manufacturing method, longitudinal MISFET, semiconductor storage device manufacturing method, and semiconductor storage device Jul. 17, 2007
7229867 Process for producing a field-effect transistor and transistor thus obtained Jun. 12, 2007

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