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Class Information
Number: 257/E29.272
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > Gate comprising ferroelectric layer (epo)
Description: This subclass is indented under subclass E29.255. This subclass is substantially the same in scope as ECLA classification H01L29/78K.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8653510 Enhanced E-field sensing using negative capacitance FET subthreshold slope enhancement Feb. 18, 2014
8563979 Method for producing display device Oct. 22, 2013
8455935 Ferroelectric polymer Jun. 4, 2013
8405166 Dielectric layer for flash memory device and method for manufacturing thereof Mar. 26, 2013
8399941 Magnetic junction elements having an easy cone anisotropy and a magnetic memory using such magnetic junction elements Mar. 19, 2013
7985995 Zr-substituted BaTiO.sub.3 films Jul. 26, 2011
7948045 Magnet-assisted transistor devices May. 24, 2011
7932547 Nonvolatile ferroelectric memory device using silicon substrate, method for manufacturing the same, and refresh method thereof Apr. 26, 2011
7829923 Magnetic tunnel junction and method of fabrication Nov. 9, 2010
7816150 Fabrication process of semiconductor device Oct. 19, 2010
7781813 Ferroelectric memory device and method for manufacturing ferroelectric memory device Aug. 24, 2010
7659562 Electric field read/write head and method of manufacturing same and data read/write device Feb. 9, 2010
7645617 Nonvolatile ferroelectric memory device using silicon substrate, method for manufacturing the same, and refresh method thereof Jan. 12, 2010
7605436 Manufacture of semiconductor device having insulation film of high dielectric constant Oct. 20, 2009
7528428 Field-effect transistor with spin-dependent transmission characteristics and non-volatile memory using the same May. 5, 2009
7449346 Method of manufacturing ferroelectric thin film for data storage and method of manufacturing ferroelectric recording medium using the same method Nov. 11, 2008
7410812 Manufacture of semiconductor device having insulation film of high dielectric constant Aug. 12, 2008
7408187 Low-voltage organic transistors on flexible substrates using high-gate dielectric insulators by room temperature process Aug. 5, 2008
7382013 Dielectric thin film, dielectric thin film device, and method of production thereof Jun. 3, 2008
7309617 MRAM memory cell with a reference layer and method for fabricating Dec. 18, 2007
7276758 Non-volatile memory having three states and method for manufacturing the same Oct. 2, 2007
7262450 MFS type field effect transistor, its manufacturing method, ferroelectric memory and semiconductor device Aug. 28, 2007
7227210 Ferroelectric memory transistor with highly-oriented film on gate insulator Jun. 5, 2007
7220601 Method of forming nano-sized MTJ cell without contact hole May. 22, 2007
7220684 Semiconductor device and method of manufacturing the same May. 22, 2007
7183596 Composite gate structure in an integrated circuit Feb. 27, 2007
7098496 Ferroelectric transistor gate stack with resistance-modified conductive oxide Aug. 29, 2006
7049628 Semiconductor memory cell and semiconductor memory device May. 23, 2006
7034349 Ferroelectric transistor for storing two data bits Apr. 25, 2006
7030435 Single transistor rare earth manganite ferroelectric nonvolatile memory cell Apr. 18, 2006
7008833 In.sub.2O.sub.3thin film resistivity control by doping metal oxide insulator for MFMox device applications Mar. 7, 2006
6997049 Wind tunnel and collector configuration therefor Feb. 14, 2006
6960801 High density single transistor ferroelectric non-volatile memory Nov. 1, 2005
6927436 Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-vo Aug. 9, 2005
6914800 Structures, methods, and systems for ferroelectric memory transistors Jul. 5, 2005
6908772 Single transistor ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric Jun. 21, 2005
6906366 Single transistor ferroelectric transistor structure with high-k insulator Jun. 14, 2005
6888736 Ferroelectric transistor for storing two data bits May. 3, 2005
6887799 Indium oxide conductive film May. 3, 2005
6885048 Transistor-type ferroelectric nonvolatile memory element Apr. 26, 2005
6876030 Semiconductor memory device Apr. 5, 2005
6858444 Method for making a ferroelectric memory transistor Feb. 22, 2005
6858906 Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers Feb. 22, 2005
6852549 Ferroelectric thin film processing for ferroelectric field-effect transistor Feb. 8, 2005
6831313 Ferroelectric composite material, method of making same and memory utilizing same Dec. 14, 2004
6825517 Ferroelectric transistor with enhanced data retention Nov. 30, 2004
6815219 Fabrication method and structure for ferroelectric nonvolatile memory field effect transistor Nov. 9, 2004
6790679 Ferroelectric transistor with enhanced data retention Sep. 14, 2004
6787370 Method of forming a weak ferroelectric transistor Sep. 7, 2004
6784473 Semiconductor nonvolatile storage element and method of fabricating the same Aug. 31, 2004

1 2 3 4










 
 
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