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Class Information
Number: 257/E29.271
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With schottky drain or source contact (epo)
Description: This subclass is indented under subclass E29.255. This subclass is substantially the same in scope as ECLA classification H01L29/78H.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8664740 Semiconductor device and method of producing the same Mar. 4, 2014
8658523 Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s) Feb. 25, 2014
8643122 Silicide contacts having different shapes on regions of a semiconductor device Feb. 4, 2014
8421180 Semiconductor structure Apr. 16, 2013
8415748 Use of epitaxial Ni silicide Apr. 9, 2013
8330167 GaN-based field effect transistor and method of manufacturing the same Dec. 11, 2012
8283244 Method for forming one transistor DRAM cell structure Oct. 9, 2012
8222735 Semiconductor device and communication system using the semiconductor device Jul. 17, 2012
8039902 Semiconductor devices having Si and SiGe epitaxial layers Oct. 18, 2011
8022446 Integrated Schottky diode and power MOSFET Sep. 20, 2011
7981735 Method of manufacturing a Schottky barrier tunnel transistor Jul. 19, 2011
7944035 Double sided semiconduction device with edge contact and package therefor May. 17, 2011
7939902 Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate May. 10, 2011
7928425 Semiconductor device including a metal-to-semiconductor superlattice interface layer and related methods Apr. 19, 2011
7915704 Schottky diode Mar. 29, 2011
7884002 Method of fabricating self aligned Schottky junctions for semiconductor devices Feb. 8, 2011
7859020 Nitride semiconductor device, Doherty amplifier and drain voltage controlled amplifier Dec. 28, 2010
7816240 Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s) Oct. 19, 2010
7791138 Semiconductor component and method Sep. 7, 2010
7777231 Thin film transistor and method for fabricating same Aug. 17, 2010
7768035 Semiconductor device and method of manufacturing the same Aug. 3, 2010
7763938 Field effect transistor Jul. 27, 2010
7745283 Method of fabricating memory transistor Jun. 29, 2010
7737465 Semiconductor apparatus and manufacturing method thereof Jun. 15, 2010
7608898 One transistor DRAM cell structure Oct. 27, 2009
7510953 Integrated fet and schottky device Mar. 31, 2009
7485932 ACCUFET with Schottky source contact Feb. 3, 2009
7453133 Silicide/semiconductor structure and method of fabrication Nov. 18, 2008
7432579 Semiconductor device with horizontal MOSFET and Schottky barrier diode provided on single substrate Oct. 7, 2008
7352008 Heterostructure with rear-face donor doping Apr. 1, 2008
7294898 Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate Nov. 13, 2007
7195996 Method of manufacturing silicon carbide semiconductor device Mar. 27, 2007
7052945 Short-channel Schottky-barrier MOSFET device and manufacturing method May. 30, 2006
7023030 MISFET Apr. 4, 2006
7005356 Schottky barrier transistor and method of manufacturing the same Feb. 28, 2006
6984864 Semiconductor device with MISFET having low leakage current Jan. 10, 2006
6949787 Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate Sep. 27, 2005
6887747 Method of forming a MISFET having a schottky junctioned silicide May. 3, 2005
6835619 Method of forming a memory transistor comprising a Schottky contact Dec. 28, 2004
6833556 Insulated gate field effect transistor having passivated schottky barriers to the channel Dec. 21, 2004
6825506 Field effect transistor and method of fabrication Nov. 30, 2004
6791140 Memory transistor structure Sep. 14, 2004
6784035 Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate Aug. 31, 2004
6784489 Method of operating a vertical DMOS transistor with schottky diode body structure Aug. 31, 2004
6774451 Mos transistor for high density integration circuits Aug. 10, 2004
6744103 Short-channel schottky-barrier MOSFET device and manufacturing method Jun. 1, 2004
6693294 Schottky barrier tunnel transistor using thin silicon layer on insulator and method for fabricating the same Feb. 17, 2004
6686614 Semiconductor switching element with integrated Schottky diode and process for producing the switching element and diode Feb. 3, 2004
6683362 Metal-semiconductor diode clamped complementary field effect transistor integrated circuits Jan. 27, 2004
6674099 MISFET Jan. 6, 2004

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