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Class Information
Number: 257/E29.27
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With buried channel (epo)
Description: This subclass is indented under subclass E29.255. This subclass is substantially the same in scope as ECLA classification H01L29/78G.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8692321 Semiconductor device and method for forming the same Apr. 8, 2014
8680624 Methods for forming barrier regions within regions of insulating material resulting in outgassing paths from the insulating material and related devices Mar. 25, 2014
8669163 Tunnel field-effect transistors with superlattice channels Mar. 11, 2014
8642430 Processes for preparing stressed semiconductor wafers and for preparing devices including the stressed semiconductor wafers Feb. 4, 2014
8598627 P-type field-effect transistor and method of production Dec. 3, 2013
8541773 Vertical tunneling negative differential resistance devices Sep. 24, 2013
8476697 Short-channel silicon carbide power MOSFET Jul. 2, 2013
8299546 Semiconductor devices with vertical extensions for lateral scaling Oct. 30, 2012
8283733 Semiconductor devices with gate electrodes and with monocrystalline silicon regions that contain atoms of nitrogen and one or more of chlorine, bromine, sulfur, fluorine, or phosphorus Oct. 9, 2012
8258579 Stressed semiconductor using carbon and method for producing the same Sep. 4, 2012
8253197 Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same Aug. 28, 2012
8253177 Strained channel transistor Aug. 28, 2012
8164145 Three-dimensional transistor with double channel configuration Apr. 24, 2012
8063403 Thin film transistor and semiconductor device Nov. 22, 2011
7928510 Manufacturing method of semiconductor device Apr. 19, 2011
7902635 High-power-gain, bipolar transistor amplifier Mar. 8, 2011
7863682 SIC semiconductor having junction barrier Schottky diode Jan. 4, 2011
7816733 SiC semiconductor having junction barrier schottky device Oct. 19, 2010
7816739 Semiconductor device using SiGe for substrate Oct. 19, 2010
7759706 Solid-state imaging device having impurities with different diffusion coefficients Jul. 20, 2010
7741180 Method of manufacturing semiconductor device with recess gate transistor Jun. 22, 2010
7700429 Method for forming fin transistor Apr. 20, 2010
7691734 Deep trench based far subcollector reachthrough Apr. 6, 2010
7682887 Transistor having high mobility channel and methods Mar. 23, 2010
7544552 Method for manufacturing junction semiconductor device Jun. 9, 2009
7446351 Transistor structures and transistors with a germanium-containing channel Nov. 4, 2008
7271447 Semiconductor device Sep. 18, 2007
7081391 Integrated circuit devices having buried insulation layers and methods of forming the same Jul. 25, 2006
7074643 Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same Jul. 11, 2006
7049656 Field-effect-controllable semiconductor configuration with a laterally extending channel zone May. 23, 2006
7045879 Silicon carbide semiconductor device having enhanced carrier mobility May. 16, 2006
6995397 Semiconductor device Feb. 7, 2006
6969875 Buried channel strained silicon FET using a supply layer created through ion implantation Nov. 29, 2005
6956238 SILICON CARBIDE POWER METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL AND METHODS OF FABRICATING SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS Oct. 18, 2005
6943116 Method for fabricating a p-channel field-effect transistor on a semiconductor substrate Sep. 13, 2005
6940110 SiC-MISFET and method for fabricating the same Sep. 6, 2005
6940126 Field-effect-controllable semiconductor component and method for producing the semiconductor component Sep. 6, 2005
6900103 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits May. 31, 2005
6864507 MISFET Mar. 8, 2005
6846715 Gate technology for strained surface channel and strained buried channel MOSFET devices Jan. 25, 2005
6830976 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits Dec. 14, 2004
6815284 Manufacturing method of semiconductor device Nov. 9, 2004
6812102 Semiconductor device manufacturing method Nov. 2, 2004
6767843 Method of N2O growth of an oxide layer on a silicon carbide layer Jul. 27, 2004
6759684 SiC semiconductor device Jul. 6, 2004
6747318 Buried channel devices and a process for their fabrication simultaneously with surface channel devices to produce transistors and capacitors with multiple electrical gate oxides Jun. 8, 2004
6724008 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits Apr. 20, 2004
6724053 PMOSFET device with localized nitrogen sidewall implantation Apr. 20, 2004
6723661 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits Apr. 20, 2004
6710404 High voltage device and method for fabricating the same Mar. 23, 2004

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