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Class Information
Number: 257/E29.269
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With lightly doped drain or source extension (epo) > With overlap between lightly doped extension and gate electrode (epo)
Description: This subclass is indented under subclass E29.266. This subclass is substantially the same in scope as ECLA classification H01L29/78F4.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7592669 |
Semiconductor device with MISFET that includes embedded insulating film arranged between source/drain regions and channel |
Sep. 22, 2009 |
| 7579660 |
Semiconductor device and manufacturing method thereof |
Aug. 25, 2009 |
| 7525158 |
Semiconductor device having pixel electrode and peripheral circuit |
Apr. 28, 2009 |
| 7453088 |
Electro-optical device and manufacturing method thereof |
Nov. 18, 2008 |
| 7420241 |
Semiconductor memory device and method of manufacturing the same |
Sep. 2, 2008 |
| 7355245 |
Structure for reducing overlap capacitance in field effect transistors |
Apr. 8, 2008 |
| 7227227 |
Reduced leakage semiconductor device |
Jun. 5, 2007 |
| 7112844 |
Semiconductor device and manufacturing method thereof |
Sep. 26, 2006 |
| 7060599 |
Method of forming shallow doped junctions having a variable profile gradation of dopants |
Jun. 13, 2006 |
| 6974997 |
High-voltage MOS transistor |
Dec. 13, 2005 |
| 6933575 |
Semiconductor device and its manufacturing method |
Aug. 23, 2005 |
| 6911695 |
Transistor having insulating spacers on gate sidewalls to reduce overlap between the gate and doped extension regions of the source and drain |
Jun. 28, 2005 |
| 6902958 |
Method for making MOSFET anti-fuse structure |
Jun. 7, 2005 |
| 6884643 |
Semiconductor device, method for evaluating the same, and method for fabricating the same |
Apr. 26, 2005 |
| 6884688 |
Method for producing a MOS transistor and MOS transistor |
Apr. 26, 2005 |
| 6876045 |
Semiconductor device and process for manufacturing the same |
Apr. 5, 2005 |
| 6700176 |
MOSFET anti-fuse structure and method for making same |
Mar. 2, 2004 |
| 6680224 |
Methods of forming and operating field effect transistors having gate and sub-gate electrodes |
Jan. 20, 2004 |
| 6646462 |
Extraction of drain junction overlap with the gate and the channel length for ultra-small CMOS devices with ultra-thin gate oxides |
Nov. 11, 2003 |
| 6593623 |
Reduced channel length lightly doped drain transistor using a sub-amorphous large tilt angle implant to provide enhanced lateral diffusion |
Jul. 15, 2003 |
| 6576965 |
Semiconductor device with lightly doped drain layer |
Jun. 10, 2003 |
| 6563151 |
Field effect transistors having gate and sub-gate electrodes that utilize different work function materials and methods of forming same |
May. 13, 2003 |
| 6562687 |
MIS transistor and method for making same on a semiconductor substrate |
May. 13, 2003 |
| 6514824 |
Semiconductor device with a pair of transistors having dual work function gate electrodes |
Feb. 4, 2003 |
| 6498077 |
Semiconductor device and method of manufacturing same |
Dec. 24, 2002 |
| 6468843 |
MIS semiconductor device having an LDD structure and a manufacturing method therefor |
Oct. 22, 2002 |
| 6461924 |
MOS transistor for high-speed and high-performance operation and manufacturing method thereof |
Oct. 8, 2002 |
| 6407436 |
Semiconductor device with abrupt source/drain extensions with controllable gate electrode overlap |
Jun. 18, 2002 |
| 6359310 |
Shallow doped junctions with a variable profile gradation of dopants |
Mar. 19, 2002 |
| 6300207 |
Depleted sidewall-poly LDD transistor |
Oct. 9, 2001 |
| 6284577 |
MIS semiconductor device having an LDD structure and a manufacturing method therefor |
Sep. 4, 2001 |
| 6284613 |
Method for forming a T-gate for better salicidation |
Sep. 4, 2001 |
| 6277699 |
Method for forming a metal-oxide-semiconductor transistor |
Aug. 21, 2001 |
| 6274906 |
MOS transistor for high-speed and high-performance operation and manufacturing method thereof |
Aug. 14, 2001 |
| 6274446 |
Method for fabricating abrupt source/drain extensions with controllable gate electrode overlap |
Aug. 14, 2001 |
| 6268640 |
Forming steep lateral doping distribution at source/drain junctions |
Jul. 31, 2001 |
| 6211555 |
Semiconductor device with a pair of transistors having dual work function gate electrodes |
Apr. 3, 2001 |
| 6207997 |
Thin film transistor for antistatic circuit and method for fabricating the same |
Mar. 27, 2001 |
| 6180471 |
Method of fabricating high voltage semiconductor device |
Jan. 30, 2001 |
| 6169315 |
Metal oxide semiconductor field effect transistor (MOSFET) and method for making thereof |
Jan. 2, 2001 |
| 6124174 |
Spacer structure as transistor gate |
Sep. 26, 2000 |
| 6091118 |
Semiconductor device having reduced overlap capacitance and method of manufacture thereof |
Jul. 18, 2000 |
| 6071825 |
Fully overlapped nitride-etch defined device and processing sequence |
Jun. 6, 2000 |
| 6037630 |
Semiconductor device with gate electrode portion and method of manufacturing the same |
Mar. 14, 2000 |
| 5977591 |
High-voltage-resistant MOS transistor, and corresponding manufacturing process |
Nov. 2, 1999 |
| 5970353 |
Reduced channel length lightly doped drain transistor using a sub-amorphous large tilt angle implant to provide enhanced lateral diffusion |
Oct. 19, 1999 |
| 5930592 |
Asymmetrical n-channel transistor having LDD implant only in the drain region |
Jul. 27, 1999 |
| 5920104 |
Reducing reverse short-channel effect with light dose of P with high dose of as in n-channel LDD |
Jul. 6, 1999 |
| 5918134 |
Method of reducing transistor channel length with oxidation inhibiting spacers |
Jun. 29, 1999 |
| 5912492 |
Integrated circuit structure incorporating a metal oxide semiconductor field effect transistor (MOSFET) having improved hot carrier immunity |
Jun. 15, 1999 |
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