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Class Information
Number: 257/E29.269
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With lightly doped drain or source extension (epo) > With overlap between lightly doped extension and gate electrode (epo)
Description: This subclass is indented under subclass E29.266. This subclass is substantially the same in scope as ECLA classification H01L29/78F4.










Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
8686501 Semiconductor device with high voltage transistor Apr. 1, 2014
8674442 Semiconductor device and manufacturing method thereof Mar. 18, 2014
8674438 Semiconductor devices having stressor regions and related fabrication methods Mar. 18, 2014
8629434 Display device and manufacturing method thereof Jan. 14, 2014
8592902 Semiconductor structure that reduces the effects of gate cross diffusion and method of forming the structure Nov. 26, 2013
8564062 High voltage MOS array with gate contact on extended drain region Oct. 22, 2013
8530973 Method for manufacturing semiconductor device Sep. 10, 2013
8518768 Extreme high mobility CMOS logic Aug. 27, 2013
8482058 Semiconductor device including a power MISFET Jul. 9, 2013
8410553 Semiconductor structure including high voltage device Apr. 2, 2013
8319316 Depletion MOS transistor and enhancement MOS transistor Nov. 27, 2012
8288830 Semiconductor device and method of manufacturing the same Oct. 16, 2012
8253197 Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same Aug. 28, 2012
8198683 Semiconductor device including transistors with silicided impurity regions Jun. 12, 2012
8183556 Extreme high mobility CMOS logic May. 22, 2012
8120106 LDMOS with double LDD and trenched drain Feb. 21, 2012
8106466 MOS transistor and method for fabricating the same Jan. 31, 2012
8097930 Semiconductor devices with trench isolations Jan. 17, 2012
8022488 High-performance FETs with embedded stressors Sep. 20, 2011
7880228 Semiconductor device including MISFET Feb. 1, 2011
7867862 Semiconductor structure including high voltage device Jan. 11, 2011
7847355 Semiconductor device including transistors with silicided impurity regions Dec. 7, 2010
7824989 Method for reducing overlap capacitance in field effect transistors Nov. 2, 2010
7759745 Semiconductor memory device Jul. 20, 2010
7709333 Method for reducing overlap capacitance in field effect transistors May. 4, 2010
7683440 Semiconductor memory device Mar. 23, 2010
7655991 CMOS device with stressed sidewall spacers Feb. 2, 2010
7592669 Semiconductor device with MISFET that includes embedded insulating film arranged between source/drain regions and channel Sep. 22, 2009
7579660 Semiconductor device and manufacturing method thereof Aug. 25, 2009
7525158 Semiconductor device having pixel electrode and peripheral circuit Apr. 28, 2009
7453088 Electro-optical device and manufacturing method thereof Nov. 18, 2008
7420241 Semiconductor memory device and method of manufacturing the same Sep. 2, 2008
7355245 Structure for reducing overlap capacitance in field effect transistors Apr. 8, 2008
7227227 Reduced leakage semiconductor device Jun. 5, 2007
7112844 Semiconductor device and manufacturing method thereof Sep. 26, 2006
7060599 Method of forming shallow doped junctions having a variable profile gradation of dopants Jun. 13, 2006
6974997 High-voltage MOS transistor Dec. 13, 2005
6933575 Semiconductor device and its manufacturing method Aug. 23, 2005
6911695 Transistor having insulating spacers on gate sidewalls to reduce overlap between the gate and doped extension regions of the source and drain Jun. 28, 2005
6902958 Method for making MOSFET anti-fuse structure Jun. 7, 2005
6884688 Method for producing a MOS transistor and MOS transistor Apr. 26, 2005
6884643 Semiconductor device, method for evaluating the same, and method for fabricating the same Apr. 26, 2005
6876045 Semiconductor device and process for manufacturing the same Apr. 5, 2005
6700176 MOSFET anti-fuse structure and method for making same Mar. 2, 2004
6680224 Methods of forming and operating field effect transistors having gate and sub-gate electrodes Jan. 20, 2004
6646462 Extraction of drain junction overlap with the gate and the channel length for ultra-small CMOS devices with ultra-thin gate oxides Nov. 11, 2003
6593623 Reduced channel length lightly doped drain transistor using a sub-amorphous large tilt angle implant to provide enhanced lateral diffusion Jul. 15, 2003
6576965 Semiconductor device with lightly doped drain layer Jun. 10, 2003
6563151 Field effect transistors having gate and sub-gate electrodes that utilize different work function materials and methods of forming same May. 13, 2003
6562687 MIS transistor and method for making same on a semiconductor substrate May. 13, 2003

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