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Class Information
Number: 257/E29.267
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With lightly doped drain or source extension (epo) > With nonplanar structure (e.g., gate or source or drain being nonplanar) (epo)
Description: This subclass is indented under subclass E29.266. This subclass is substantially the same in scope as ECLA classification H01L29/78F2.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8652913 Method for forming silicon/germanium containing drain/source regions in transistors with reduced silicon/germanium loss Feb. 18, 2014
8648445 Metal-oxide-semiconductor device having trenched diffusion region and method of forming same Feb. 11, 2014
8637929 LDMOS transistor having a gate electrode formed over thick and thin portions of a gate insulation film Jan. 28, 2014
8610201 FinFET comprising a punch-through stopper Dec. 17, 2013
8564025 Nanowire FET having induced radial strain Oct. 22, 2013
8487367 Planar MOSFET with textured channel and gate Jul. 16, 2013
8435855 Methods of manufacturing semiconductor devices May. 7, 2013
8426858 Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain Apr. 23, 2013
8313990 Nanowire FET having induced radial strain Nov. 20, 2012
8309417 Vertical-type semiconductor devices and methods of manufacturing the same Nov. 13, 2012
8309991 Nanowire FET having induced radial strain Nov. 13, 2012
8299546 Semiconductor devices with vertical extensions for lateral scaling Oct. 30, 2012
8169026 Stress-induced CMOS device May. 1, 2012
8110470 Asymmetrical transistor device and method of fabrication Feb. 7, 2012
8049286 Semiconductor device and semiconductor device manufacturing method Nov. 1, 2011
8022488 High-performance FETs with embedded stressors Sep. 20, 2011
8013424 Semiconductor device and method of fabricating the same Sep. 6, 2011
7936021 Semiconductor device including a fin field effect transistor and method of manufacturing the same May. 3, 2011
7906809 Semiconductor device having an elevated source/drain structure of varying cross-section Mar. 15, 2011
7880228 Semiconductor device including MISFET Feb. 1, 2011
7872309 Self-aligned lightly doped drain recessed-gate thin-film transistor Jan. 18, 2011
7858981 Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain Dec. 28, 2010
7714380 Semiconductor device and method of manufacturing the semiconductor device May. 11, 2010
7713850 Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals localised with precision May. 11, 2010
7687854 Transistor in a semiconductor substrate having high-concentration source and drain region formed at the bottom of a trench adjacent to the gate electrode Mar. 30, 2010
7655991 CMOS device with stressed sidewall spacers Feb. 2, 2010
7652308 Semiconductor device having gate-all-around structure and method of fabricating the same Jan. 26, 2010
7612405 Fabrication of FinFETs with multiple fin heights Nov. 3, 2009
7608515 Diffusion layer for stressed semiconductor devices Oct. 27, 2009
7560322 Method of making a semiconductor structure for high power semiconductor devices Jul. 14, 2009
7531414 Method of manufacturing integrated circuit device including recessed channel transistor May. 12, 2009
7528439 Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array May. 5, 2009
7494862 Methods for uniform doping of non-planar transistor structures Feb. 24, 2009
7400016 Semiconductor device realizing characteristics like a SOI MOSFET Jul. 15, 2008
7326619 Method of manufacturing integrated circuit device including recessed channel transistor Feb. 5, 2008
7253481 High performance MOS device with graded silicide Aug. 7, 2007
7154146 Dielectric plug in mosfets to suppress short-channel effects Dec. 26, 2006
7074681 Semiconductor component and method of manufacturing Jul. 11, 2006
7049231 Methods of forming capacitors May. 23, 2006
7033895 Method of fabricating a MOS transistor with elevated source/drain structure using a selective epitaxial growth process Apr. 25, 2006
7033875 MOS transistor and fabrication method thereof Apr. 25, 2006
7030465 Semiconductor device that can increase the carrier mobility and method for fabricating the same Apr. 18, 2006
7015543 Trench-gate semiconductor device and fabrication method thereof Mar. 21, 2006
7009200 Field effect transistor Mar. 7, 2006
6998305 Enhanced selectivity for epitaxial deposition Feb. 14, 2006
6977415 Semiconductor device including a gate insulating film on a recess and source and drain extension regions Dec. 20, 2005
6974743 Method of making encapsulated spacers in vertical pass gate DRAM and damascene logic gates Dec. 13, 2005
6964911 Method for forming a semiconductor device having isolation regions Nov. 15, 2005
6960785 MOSFET and method of fabricating the same Nov. 1, 2005
6956263 Field effect transistor structure with self-aligned raised source/drain extensions Oct. 18, 2005

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