Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With lightly doped drain or source extension (epo) > Patents

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Class Information
Number: 257/E29.266
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With lightly doped drain or source extension (epo)
Description: This subclass is indented under subclass E29.255. This subclass is substantially the same in scope as ECLA classification H01L29/78F.

Sub-classes under this class:

Class Number	Class Name	Patents
257/E29.268	Source region and drain region having nonsymmetrical structure about gate electrode (epo)	756
257/E29.267	With nonplanar structure (e.g., gate or source or drain being nonplanar) (epo)	386
257/E29.269	With overlap between lightly doped extension and gate electrode (epo)	252

Patents under this class:

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Patent Number	Title Of Patent	Date Issued
8710538	Light-emitting device with a spacer at bottom surface	Apr. 29, 2014
8664060	Semiconductor structure and method of fabricating the same	Mar. 4, 2014
8658491	Manufacturing method of transistor structure having a recessed channel	Feb. 25, 2014
8648394	Method for growing conformal EPI layers and structure thereof	Feb. 11, 2014
8643137	Short channel lateral MOSFET	Feb. 4, 2014
8638594	Integrated circuits with asymmetric transistors	Jan. 28, 2014
8604564	Semiconductor structures and methods of manufacturing the same	Dec. 10, 2013
8592264	Source-drain extension formation in replacement metal gate transistor device	Nov. 26, 2013
8587056	High-voltage metal-oxide-semiconductor device	Nov. 19, 2013
8574991	Asymmetric transistor devices formed by asymmetric spacers and tilted implantation	Nov. 5, 2013
8569845	Strained silicon device	Oct. 29, 2013
8569847	Nonvolatile semiconductor memory device	Oct. 29, 2013
8564073	Programmable connection and isolation of active regions in an integrated circuit using ambiguous features to confuse a reverse engineer	Oct. 22, 2013
8546204	Method for growing conformal epi layers and structure thereof	Oct. 1, 2013
8546891	Fin profile structure and method of making same	Oct. 1, 2013
8541823	Field effect transistor	Sep. 24, 2013
8536041	Method for fabricating transistor with high-K dielectric sidewall spacer	Sep. 17, 2013
8507987	Radio frequency device and method for fabricating the same	Aug. 13, 2013
8508000	Fin profile structure and method of making same	Aug. 13, 2013
8482058	Semiconductor device including a power MISFET	Jul. 9, 2013
8476139	High performance MOSFET	Jul. 2, 2013
8415752	Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone	Apr. 9, 2013
8390080	Transistor with dopant-bearing metal in source and drain	Mar. 5, 2013
8384167	Semiconductor device with field effect transistor and manufacturing method thereof	Feb. 26, 2013
8350342	Semiconductor device	Jan. 8, 2013
8329568	Semiconductor device and method for making the same	Dec. 11, 2012
8304834	Semiconductor local interconnect and contact	Nov. 6, 2012
8299508	CMOS structure with multiple spacers	Oct. 30, 2012
8299535	Delta monolayer dopants epitaxy for embedded source/drain silicide	Oct. 30, 2012
8299540	High performance MOSFET	Oct. 30, 2012
8283725	Semiconductor device	Oct. 9, 2012
8278164	Semiconductor structures and methods of manufacturing the same	Oct. 2, 2012
8253208	Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile	Aug. 28, 2012
8237224	Method of manufacturing a semiconductor device including a high voltage MOS and the semiconductor device manufactured by the method	Aug. 7, 2012
8232604	Transistor with high-k dielectric sidewall spacer	Jul. 31, 2012
8217471	System and method for metal-oxide-semiconductor field effect transistor	Jul. 10, 2012
8212253	Shallow junction formation and high dopant activation rate of MOS devices	Jul. 3, 2012
8212329	Short channel lateral MOSFET and method	Jul. 3, 2012
8198677	Trench-gate LDMOS structures	Jun. 12, 2012
8169024	Method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantation	May. 1, 2012
8168487	Programmable connection and isolation of active regions in an integrated circuit using ambiguous features to confuse a reverse engineer	May. 1, 2012
8163619	Fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone	Apr. 24, 2012
8158482	Asymmetric transistor devices formed by asymmetric spacers and tilted implantation	Apr. 17, 2012
8143131	Method of fabricating spacers in a strained semiconductor device	Mar. 27, 2012
8143139	Method of fabricating extended drain MOS transistor	Mar. 27, 2012
8143677	Transistor, a transistor arrangement and method thereof	Mar. 27, 2012
8138030	Asymmetric finFET device with improved parasitic resistance and capacitance	Mar. 20, 2012
8138559	Recessed drift region for HVMOS breakdown improvement	Mar. 20, 2012
8106466	MOS transistor and method for fabricating the same	Jan. 31, 2012
8039342	Enhanced integrity of a high-K metal gate electrode structure by using a sacrificial spacer for cap removal	Oct. 18, 2011