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Class Information
Number: 257/E29.266
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With lightly doped drain or source extension (epo)
Description: This subclass is indented under subclass E29.255. This subclass is substantially the same in scope as ECLA classification H01L29/78F.
Sub-classes under this class:
Patents under this class:
Patent Number |
Title Of Patent |
Date Issued |
8710538 |
Light-emitting device with a spacer at bottom surface |
Apr. 29, 2014 |
8664060 |
Semiconductor structure and method of fabricating the same |
Mar. 4, 2014 |
8658491 |
Manufacturing method of transistor structure having a recessed channel |
Feb. 25, 2014 |
8648394 |
Method for growing conformal EPI layers and structure thereof |
Feb. 11, 2014 |
8643137 |
Short channel lateral MOSFET |
Feb. 4, 2014 |
8638594 |
Integrated circuits with asymmetric transistors |
Jan. 28, 2014 |
8604564 |
Semiconductor structures and methods of manufacturing the same |
Dec. 10, 2013 |
8592264 |
Source-drain extension formation in replacement metal gate transistor device |
Nov. 26, 2013 |
8587056 |
High-voltage metal-oxide-semiconductor device |
Nov. 19, 2013 |
8574991 |
Asymmetric transistor devices formed by asymmetric spacers and tilted implantation |
Nov. 5, 2013 |
8569845 |
Strained silicon device |
Oct. 29, 2013 |
8569847 |
Nonvolatile semiconductor memory device |
Oct. 29, 2013 |
8564073 |
Programmable connection and isolation of active regions in an integrated circuit using ambiguous features to confuse a reverse engineer |
Oct. 22, 2013 |
8546204 |
Method for growing conformal epi layers and structure thereof |
Oct. 1, 2013 |
8546891 |
Fin profile structure and method of making same |
Oct. 1, 2013 |
8541823 |
Field effect transistor |
Sep. 24, 2013 |
8536041 |
Method for fabricating transistor with high-K dielectric sidewall spacer |
Sep. 17, 2013 |
8507987 |
Radio frequency device and method for fabricating the same |
Aug. 13, 2013 |
8508000 |
Fin profile structure and method of making same |
Aug. 13, 2013 |
8482058 |
Semiconductor device including a power MISFET |
Jul. 9, 2013 |
8476139 |
High performance MOSFET |
Jul. 2, 2013 |
8415752 |
Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone |
Apr. 9, 2013 |
8390080 |
Transistor with dopant-bearing metal in source and drain |
Mar. 5, 2013 |
8384167 |
Semiconductor device with field effect transistor and manufacturing method thereof |
Feb. 26, 2013 |
8350342 |
Semiconductor device |
Jan. 8, 2013 |
8329568 |
Semiconductor device and method for making the same |
Dec. 11, 2012 |
8304834 |
Semiconductor local interconnect and contact |
Nov. 6, 2012 |
8299508 |
CMOS structure with multiple spacers |
Oct. 30, 2012 |
8299535 |
Delta monolayer dopants epitaxy for embedded source/drain silicide |
Oct. 30, 2012 |
8299540 |
High performance MOSFET |
Oct. 30, 2012 |
8283725 |
Semiconductor device |
Oct. 9, 2012 |
8278164 |
Semiconductor structures and methods of manufacturing the same |
Oct. 2, 2012 |
8253208 |
Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile |
Aug. 28, 2012 |
8237224 |
Method of manufacturing a semiconductor device including a high voltage MOS and the semiconductor device manufactured by the method |
Aug. 7, 2012 |
8232604 |
Transistor with high-k dielectric sidewall spacer |
Jul. 31, 2012 |
8217471 |
System and method for metal-oxide-semiconductor field effect transistor |
Jul. 10, 2012 |
8212253 |
Shallow junction formation and high dopant activation rate of MOS devices |
Jul. 3, 2012 |
8212329 |
Short channel lateral MOSFET and method |
Jul. 3, 2012 |
8198677 |
Trench-gate LDMOS structures |
Jun. 12, 2012 |
8169024 |
Method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantation |
May. 1, 2012 |
8168487 |
Programmable connection and isolation of active regions in an integrated circuit using ambiguous features to confuse a reverse engineer |
May. 1, 2012 |
8163619 |
Fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone |
Apr. 24, 2012 |
8158482 |
Asymmetric transistor devices formed by asymmetric spacers and tilted implantation |
Apr. 17, 2012 |
8143131 |
Method of fabricating spacers in a strained semiconductor device |
Mar. 27, 2012 |
8143139 |
Method of fabricating extended drain MOS transistor |
Mar. 27, 2012 |
8143677 |
Transistor, a transistor arrangement and method thereof |
Mar. 27, 2012 |
8138030 |
Asymmetric finFET device with improved parasitic resistance and capacitance |
Mar. 20, 2012 |
8138559 |
Recessed drift region for HVMOS breakdown improvement |
Mar. 20, 2012 |
8106466 |
MOS transistor and method for fabricating the same |
Jan. 31, 2012 |
8039342 |
Enhanced integrity of a high-K metal gate electrode structure by using a sacrificial spacer for cap removal |
Oct. 18, 2011 |
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