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Class Information
Number: 257/E29.266
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With lightly doped drain or source extension (epo)
Description: This subclass is indented under subclass E29.255. This subclass is substantially the same in scope as ECLA classification H01L29/78F.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.268 Source region and drain region having nonsymmetrical structure about gate electrode (epo) 756
257/E29.267 With nonplanar structure (e.g., gate or source or drain being nonplanar) (epo) 386
257/E29.269 With overlap between lightly doped extension and gate electrode (epo) 252


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14

Patent Number Title Of Patent Date Issued
8710538 Light-emitting device with a spacer at bottom surface Apr. 29, 2014
8664060 Semiconductor structure and method of fabricating the same Mar. 4, 2014
8658491 Manufacturing method of transistor structure having a recessed channel Feb. 25, 2014
8648394 Method for growing conformal EPI layers and structure thereof Feb. 11, 2014
8643137 Short channel lateral MOSFET Feb. 4, 2014
8638594 Integrated circuits with asymmetric transistors Jan. 28, 2014
8604564 Semiconductor structures and methods of manufacturing the same Dec. 10, 2013
8592264 Source-drain extension formation in replacement metal gate transistor device Nov. 26, 2013
8587056 High-voltage metal-oxide-semiconductor device Nov. 19, 2013
8574991 Asymmetric transistor devices formed by asymmetric spacers and tilted implantation Nov. 5, 2013
8569845 Strained silicon device Oct. 29, 2013
8569847 Nonvolatile semiconductor memory device Oct. 29, 2013
8564073 Programmable connection and isolation of active regions in an integrated circuit using ambiguous features to confuse a reverse engineer Oct. 22, 2013
8546204 Method for growing conformal epi layers and structure thereof Oct. 1, 2013
8546891 Fin profile structure and method of making same Oct. 1, 2013
8541823 Field effect transistor Sep. 24, 2013
8536041 Method for fabricating transistor with high-K dielectric sidewall spacer Sep. 17, 2013
8507987 Radio frequency device and method for fabricating the same Aug. 13, 2013
8508000 Fin profile structure and method of making same Aug. 13, 2013
8482058 Semiconductor device including a power MISFET Jul. 9, 2013
8476139 High performance MOSFET Jul. 2, 2013
8415752 Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone Apr. 9, 2013
8390080 Transistor with dopant-bearing metal in source and drain Mar. 5, 2013
8384167 Semiconductor device with field effect transistor and manufacturing method thereof Feb. 26, 2013
8350342 Semiconductor device Jan. 8, 2013
8329568 Semiconductor device and method for making the same Dec. 11, 2012
8304834 Semiconductor local interconnect and contact Nov. 6, 2012
8299508 CMOS structure with multiple spacers Oct. 30, 2012
8299535 Delta monolayer dopants epitaxy for embedded source/drain silicide Oct. 30, 2012
8299540 High performance MOSFET Oct. 30, 2012
8283725 Semiconductor device Oct. 9, 2012
8278164 Semiconductor structures and methods of manufacturing the same Oct. 2, 2012
8253208 Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile Aug. 28, 2012
8237224 Method of manufacturing a semiconductor device including a high voltage MOS and the semiconductor device manufactured by the method Aug. 7, 2012
8232604 Transistor with high-k dielectric sidewall spacer Jul. 31, 2012
8217471 System and method for metal-oxide-semiconductor field effect transistor Jul. 10, 2012
8212253 Shallow junction formation and high dopant activation rate of MOS devices Jul. 3, 2012
8212329 Short channel lateral MOSFET and method Jul. 3, 2012
8198677 Trench-gate LDMOS structures Jun. 12, 2012
8169024 Method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantation May. 1, 2012
8168487 Programmable connection and isolation of active regions in an integrated circuit using ambiguous features to confuse a reverse engineer May. 1, 2012
8163619 Fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone Apr. 24, 2012
8158482 Asymmetric transistor devices formed by asymmetric spacers and tilted implantation Apr. 17, 2012
8143131 Method of fabricating spacers in a strained semiconductor device Mar. 27, 2012
8143139 Method of fabricating extended drain MOS transistor Mar. 27, 2012
8143677 Transistor, a transistor arrangement and method thereof Mar. 27, 2012
8138030 Asymmetric finFET device with improved parasitic resistance and capacitance Mar. 20, 2012
8138559 Recessed drift region for HVMOS breakdown improvement Mar. 20, 2012
8106466 MOS transistor and method for fabricating the same Jan. 31, 2012
8039342 Enhanced integrity of a high-K metal gate electrode structure by using a sacrificial spacer for cap removal Oct. 18, 2011

1 2 3 4 5 6 7 8 9 10 11 12 13 14










 
 
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