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Class Information
Number: 257/E29.265
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With multiple gate structure (epo) > Structure comprising mos gate and at least one non-mos gate (e.g., jfet or mesfet gate) (epo)
Description: This subclass is indented under subclass E29.264. This subclass is substantially the same in scope as ECLA classification H01L29/78E2.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8653589 Low Qgd trench MOSFET integrated with schottky rectifier Feb. 18, 2014
8524552 Normally-off power JFET and manufacturing method thereof Sep. 3, 2013
8502280 Fin-JFET Aug. 6, 2013
8455938 Device comprising a field-effect transistor in a silicon-on-insulator Jun. 4, 2013
8441048 Horizontally depleted metal semiconductor field effect transistor May. 14, 2013
8362529 Power semiconductor device having adjustable output capacitance Jan. 29, 2013
8354698 VDMOS and JFET integrated semiconductor device Jan. 15, 2013
8283715 Method and apparatus for buried word line formation Oct. 9, 2012
8269263 High current density power field effect transistor Sep. 18, 2012
8258555 Semiconductor device having extra capacitor structure Sep. 4, 2012
8169022 Vertical junction field effect transistors and diodes having graded doped regions and methods of making May. 1, 2012
8058674 Alternate 4-terminal JFET geometry to reduce gate to source capacitance Nov. 15, 2011
7944017 Semiconductor device and manufacturing method of the same May. 17, 2011
7928469 MOSFET and method for manufacturing MOSFET Apr. 19, 2011
7825441 Junction field effect transistor with a hyperabrupt junction Nov. 2, 2010
7741695 Semiconductor device Jun. 22, 2010
7736961 High voltage depletion FET employing a channel stopping implant Jun. 15, 2010
7732887 Schottky junction diode devices in CMOS Jun. 8, 2010
7700971 Insulated gate silicon carbide semiconductor device Apr. 20, 2010
7642566 Scalable process and structure of JFET for small and decreasing line widths Jan. 5, 2010
7642617 Integrated circuit with depletion mode JFET Jan. 5, 2010
7629632 Insulated-gate field effect transistor Dec. 8, 2009
7560755 Self aligned gate JFET structure and method Jul. 14, 2009
7527994 Amorphous silicon thin-film transistors and methods of making the same May. 5, 2009
7470967 Self-aligned silicon carbide semiconductor devices and methods of making the same Dec. 30, 2008
7465978 Field effect transistor with a high breakdown voltage and method of manufacturing the same Dec. 16, 2008
7417266 MOSFET having a JFET embedded as a body diode Aug. 26, 2008
7378688 Method and apparatus for a low noise JFET device on a standard CMOS process May. 27, 2008
7335928 Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each the first groove Feb. 26, 2008
7335952 Semiconductor device and manufacturing method therefor Feb. 26, 2008
7307329 Electronic device with guard ring Dec. 11, 2007
7304335 Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performance a Dec. 4, 2007
7268394 JFET structure for integrated circuit and fabrication method Sep. 11, 2007
7226818 High performance field effect transistors comprising carbon nanotubes fabricated using solution based processing Jun. 5, 2007
7057239 Semiconductor device allowing modulation of a gain coefficient and a logic circuit provided with the same Jun. 6, 2006
6878993 Self-aligned trench MOS junction field-effect transistor for high-frequency applications Apr. 12, 2005
6828631 High-voltage transistor with multi-layer conduction region Dec. 7, 2004
6800903 High-voltage transistor with multi-layer conduction region Oct. 5, 2004
6787437 Method of making a high-voltage transistor with buried conduction regions Sep. 7, 2004
6784486 Vertical power devices having retrograded-doped transition regions therein Aug. 31, 2004
6777749 High-voltage transistor with multi-layer conduction region Aug. 17, 2004
6774733 Frequency variable oscillation circuit Aug. 10, 2004
6768172 High-voltage transistor with multi-layer conduction region Jul. 27, 2004
6764889 Methods of forming vertical mosfets having trench-based gate electrodes within deeper trench-based source electrodes Jul. 20, 2004
6724041 Method of making a high-voltage transistor with buried conduction regions Apr. 20, 2004
6661056 DMOS transistor protected against polarity reversal Dec. 9, 2003
6639277 High-voltage transistor with multi-layer conduction region Oct. 28, 2003
6633065 High-voltage transistor with multi-layer conduction region Oct. 14, 2003
6613616 Method for fabricating field-effect transistors in integrated semiconductor circuits and integrated semiconductor circuit fabricated with a field-effect transistor of this type including a dua Sep. 2, 2003
6614088 Breakdown improvement method and sturcture for lateral DMOS device Sep. 2, 2003

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