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Class Information
Number: 257/E29.263
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > Comprising gate-to-body connection (i.e., bulk dynamic threshold voltage mosfet) (epo)
Description: This subclass is indented under subclass E29.255. This subclass is substantially the same in scope as ECLA classification H01L29/78D.










Patents under this class:

Patent Number Title Of Patent Date Issued
8441071 Body contacted transistor with reduced parasitic capacitance May. 14, 2013
8269287 Floating gate memory device with increased coupling coefficient Sep. 18, 2012
8227874 Semiconductor transistors having high-K gate dielectric layers and metal gate electrodes Jul. 24, 2012
8022482 Device configuration of asymmetrical DMOSFET with schottky barrier source Sep. 20, 2011
7888743 Substrate backgate for trigate FET Feb. 15, 2011
7855125 Method for manufacturing semiconductor device and semiconductor device Dec. 21, 2010
7737507 Insulated gate field effect transistors Jun. 15, 2010
7705406 Transistor array with selected subset having suppressed layout sensitivity of threshold voltage Apr. 27, 2010
7691693 Method for suppressing layout sensitivity of threshold voltage in a transistor array Apr. 6, 2010
7659155 Method of forming a transistor having gate and body in direct self-aligned contact Feb. 9, 2010
7649214 ESD protection system for multiple-domain integrated circuits Jan. 19, 2010
7622777 Semiconductor device and method for fabricating the same Nov. 24, 2009
7446001 Method for forming a semiconductor-on-insulator (SOI) body-contacted device with a portion of drain region removed Nov. 4, 2008
7446354 Power semiconductor device having improved performance and method Nov. 4, 2008
7417283 CMOS device with dual polycide gates and method of manufacturing the same Aug. 26, 2008
7268398 ESD protection cell with active pwell resistance control Sep. 11, 2007
7265416 High breakdown voltage low on-resistance lateral DMOS transistor Sep. 4, 2007
7170110 Semiconductor device and method for fabricating the same Jan. 30, 2007
7154133 Semiconductor device and method of manufacture Dec. 26, 2006
7129553 Lanthanide oxide/hafnium oxide dielectrics Oct. 31, 2006
7084465 Semiconductor device having device isolation region and portable electronic device Aug. 1, 2006
7022530 Semiconductor device and method for fabricating the same Apr. 4, 2006
6989569 MOS transistor with a controlled threshold voltage Jan. 24, 2006
6917075 Semiconductor device Jul. 12, 2005
6913960 Fin-based double poly dynamic threshold CMOS FET with spacer gate and method of fabrication Jul. 5, 2005
6872989 Semiconductor device and method for fabricating the same Mar. 29, 2005
6821856 Method of manufacturing semiconductor device having source/drain regions included in a semiconductor layer formed over an isolation insulating film and a semiconductor device fabricated thereb Nov. 23, 2004
6815735 Semiconductor device Nov. 9, 2004
6787410 Semiconductor device having dynamic threshold transistors and element isolation region and fabrication method thereof Sep. 7, 2004
6774437 Fin-based double poly dynamic threshold CMOS FET with spacer gate and method of fabrication Aug. 10, 2004
6677190 Self-aligned body contact in a semiconductor device Jan. 13, 2004
6509615 Semiconductor device having dynamic threshold transistors and element isolation region and fabrication method thereof Jan. 21, 2003
6429487 Semiconductor device having gate to body connection Aug. 6, 2002
6426532 Semiconductor device and method of manufacture thereof Jul. 30, 2002
6406947 Method of making a low leakage dynamic threshold voltage MOS (DTMOS) transistor Jun. 18, 2002
6362078 Dynamic threshold voltage device and methods for fabricating dynamic threshold voltage devices Mar. 26, 2002
6303444 Method for introducing an equivalent RC circuit in a MOS device using resistive wells Oct. 16, 2001
6245607 Buried channel quasi-unipolar transistor Jun. 12, 2001
6172405 Semiconductor device and production process therefore Jan. 9, 2001
5780899 Delta doped and counter doped dynamic threshold voltage MOSFET for ultra-low voltage operation Jul. 14, 1998
5559368 Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation Sep. 24, 1996











 
 
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