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Class Information
Number: 257/E29.26
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With channel containing layer contacting drain drift region (e.g., dmos transistor) (epo) > Having vertical bulk current component or current vertically following trench gate (e.g., vertical power dmos transistor) (epo) > With nonplanar surface (epo) > Channel structure lying under slanted or vertical surface or being formed along surface of groove (e.g., trench gate dmosfet) (epo)
Description: This subclass is indented under subclass E29.259. This subclass is substantially the same in scope as ECLA classification H01L29/78B2B2.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8710586 SIC semiconductor device and method for manufacturing the same Apr. 29, 2014
8686492 Non-volatile FINFET memory device and manufacturing method thereof Apr. 1, 2014
8680610 Trench MOSFET having floating dummy cells for avalanche improvement Mar. 25, 2014
8659078 Semiconductor device and method of manufacturing the same Feb. 25, 2014
8648398 Electronic device and a transistor including a trench and a sidewall doped region Feb. 11, 2014
8643090 Semiconductor devices and methods for manufacturing a semiconductor device Feb. 4, 2014
8643103 Semiconductor device including gate contact region and protruding gate electrode Feb. 4, 2014
8592894 Method of forming a power semiconductor device and power semiconductor device Nov. 26, 2013
8587047 Capacitor formation for a pumping circuit Nov. 19, 2013
RE44547 Semiconductor device having deep trench charge compensation regions and method Oct. 22, 2013
8564061 Semiconductor device Oct. 22, 2013
8552493 Segmented pillar layout for a high-voltage vertical transistor Oct. 8, 2013
8492816 Deep trench decoupling capacitor Jul. 23, 2013
8487362 Semiconductor device and method of forming the same Jul. 16, 2013
8476701 Semiconductor device with gate electrode including a concave portion Jul. 2, 2013
8476702 Semiconductor device Jul. 2, 2013
8461625 Carrier mobility enhanced channel devices and method of manufacture Jun. 11, 2013
8455942 Semiconductor device having vertical-type channel Jun. 4, 2013
8455318 Process for manufacturing a power semiconductor device having charge-balance columnar structures on a non-planar surface, and corresponding power semiconductor device Jun. 4, 2013
8441065 Semiconductor device and manufacturing method of the same May. 14, 2013
8431989 Shielded gate trench (SGT) MOSFET devices and manufacturing processes Apr. 30, 2013
8426911 Memory device with recessed construction between memory constructions Apr. 23, 2013
8409954 Ultra-low drain-source resistance power MOSFET Apr. 2, 2013
8405145 Semiconductor device and method of manufacturing the same Mar. 26, 2013
8399925 Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET and method Mar. 19, 2013
8357973 Inverted-trench grounded-source FET structure with trenched source body short electrode Jan. 22, 2013
8357971 Trench gate MOSFET and method of manufacturing the same Jan. 22, 2013
8350317 Power semiconductor devices and methods of manufacture Jan. 8, 2013
8329539 Semiconductor device having recessed gate electrode and method of fabricating the same Dec. 11, 2012
8309418 Field effect transistor device with shaped conduction channel Nov. 13, 2012
8310001 MOSFET switch with embedded electrostatic charge Nov. 13, 2012
8310002 Semiconductor device and method of forming the same Nov. 13, 2012
8252647 Fabrication of trench DMOS device having thick bottom shielding oxide Aug. 28, 2012
8253194 Structures for reducing dopant out-diffusion from implant regions in power devices Aug. 28, 2012
8247868 Power MOSFET and fabricating method thereof Aug. 21, 2012
8227315 Inverted-trench grounded-source FET structure using conductive substrates, with highly doped substrates Jul. 24, 2012
8222691 Gate pullback at ends of high-voltage vertical transistor structure Jul. 17, 2012
8222706 Semiconductor device Jul. 17, 2012
8211766 Method of fabricating a trench power MOS transistor Jul. 3, 2012
8212247 Organic light emitting display device and fabricating method thereof Jul. 3, 2012
8178920 Semiconductor device and method of forming the same May. 15, 2012
8169021 Trench gate semiconductor device and method of manufacturing the same May. 1, 2012
8159025 Gate electrode in a trench for power MOS transistors Apr. 17, 2012
8153492 Self-aligned V-channel MOSFET Apr. 10, 2012
8143125 Structure and method for forming a salicide on the gate electrode of a trench-gate FET Mar. 27, 2012
8125026 Gate of trench type MOSFET device and method for forming the gate Feb. 28, 2012
8120101 Semiconductor constructions and transistors, and methods of forming semiconductor constructions and transistors Feb. 21, 2012
8119486 Methods of manufacturing semiconductor devices having a recessed-channel Feb. 21, 2012
8110871 Semiconductor device with recess and fin structure Feb. 7, 2012
8097917 Silicon carbide semiconductor device Jan. 17, 2012

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