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Class Information
Number: 257/E29.259
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With channel containing layer contacting drain drift region (e.g., dmos transistor) (epo) > Having vertical bulk current component or current vertically following trench gate (e.g., vertical power dmos transistor) (epo) > With nonplanar surface (epo)
Description: This subclass is indented under subclass E29.257. This subclass is substantially the same in scope as ECLA classification H01L29/78B2B.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.26 Channel structure lying under slanted or vertical surface or being formed along surface of groove (e.g., trench gate dmosfet) (epo) 848


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8614133 Structure and method to enabling a borderless contact to source regions and drain regions of a complementary metal oxide semiconductor (CMOS) transistor Dec. 24, 2013
8502351 Nonplanar device with thinned lower body portion and method of fabrication Aug. 6, 2013
8421160 Structure and method to enabling a borderless contact to source regions and drain regions of a complementary metal oxide semiconductor (CMOS) transistor Apr. 16, 2013
8084813 Short gate high power MOSFET and method of manufacture Dec. 27, 2011
8067818 Nonplanar device with thinned lower body portion and method of fabrication Nov. 29, 2011
8008719 Transistor structure having dual shield layers Aug. 30, 2011
7986005 Short circuit limiting in power semiconductor devices Jul. 26, 2011
7943988 Power MOSFET with a gate structure of different material May. 17, 2011
7944002 Semiconductor device and method for fabricating the same May. 17, 2011
7838915 Semiconductor device having multi-gate structure and method of manufacturing the same Nov. 23, 2010
7625787 Thin silicon-on-insulator high voltage transistor with body ground Dec. 1, 2009
7473963 Metal oxide semiconductor (MOS) transistors having three dimensional channels Jan. 6, 2009
7276763 Structure and method for forming the gate electrode in a multiple-gate transistor Oct. 2, 2007
7268396 Finfets having first and second gates of different resistivities Sep. 11, 2007
7045879 Silicon carbide semiconductor device having enhanced carrier mobility May. 16, 2006
7045859 Trench fet with self aligned source and contact May. 16, 2006
7042048 Semiconductor device and a method of manufacturing the same May. 9, 2006
7034346 Semiconductor device and method for manufacturing the same Apr. 25, 2006
6998315 Termination structure for trench DMOS device and method of making the same Feb. 14, 2006
6998678 Semiconductor arrangement with a MOS-transistor and a parallel Schottky-diode Feb. 14, 2006
6992352 Trenched DMOS devices and methods and processes for making same Jan. 31, 2006
6989306 Termination structure of DMOS device and method of forming the same Jan. 24, 2006
6984864 Semiconductor device with MISFET having low leakage current Jan. 10, 2006
6958275 MOSFET power transistors and methods Oct. 25, 2005
6955970 Process for manufacturing a low voltage MOSFET power device having a minimum figure of merit Oct. 18, 2005
6940110 SiC-MISFET and method for fabricating the same Sep. 6, 2005
6939776 Semiconductor device and a method of fabricating the same Sep. 6, 2005
6930354 Semiconductor device Aug. 16, 2005
6930355 Silicided trench gate power mosfets ultrasonically bonded to a surface source electrode Aug. 16, 2005
6921939 Power MOSFET and method for forming same using a self-aligned body implant Jul. 26, 2005
6919249 Semiconductor device and its manufacturing method comprising a trench gate Jul. 19, 2005
6919241 Superjunction device and process for its manufacture Jul. 19, 2005
6916745 Structure and method for forming a trench MOSFET having self-aligned features Jul. 12, 2005
6903416 Trench transistors and methods for fabricating trench transistors Jun. 7, 2005
6900523 Termination structure for MOSgated power devices May. 31, 2005
6888196 Vertical MOSFET reduced in cell size and method of producing the same May. 3, 2005
6885061 Semiconductor device and a method of manufacturing the same Apr. 26, 2005
6870201 High voltage resistant edge structure for semiconductor components Mar. 22, 2005
6858896 Insulated gate type semiconductor device and method for fabricating the same Feb. 22, 2005
6855986 Termination structure for trench DMOS device and method of making the same Feb. 15, 2005
6853033 Power MOSFET having enhanced breakdown voltage Feb. 8, 2005
6852597 Method for fabricating power semiconductor device having trench gate structure Feb. 8, 2005
6846706 Power MOSFET with ultra-deep base and reduced on resistance Jan. 25, 2005
6841436 Method of fabricating SiC semiconductor device Jan. 11, 2005
6838735 Trench FET with non overlapping poly and remote contact therefor Jan. 4, 2005
6833298 Method for fabricating a semiconductor component having at least one transistor cell and an edge cell Dec. 21, 2004
6828177 Gate pad protection structure for power semiconductor device and manufacturing method therefor Dec. 7, 2004
6818949 Semiconductor device and method for fabricating the same Nov. 16, 2004
6812524 Field effect controlled semiconductor component Nov. 2, 2004
6798018 Semiconductor device having MOSFET of trench structure and method for fabricating the same Sep. 28, 2004

1 2 3 4 5










 
 
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