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Class Information
Number: 257/E29.258
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With channel containing layer contacting drain drift region (e.g., dmos transistor) (epo) > Having vertical bulk current component or current vertically following trench gate (e.g., vertical power dmos transistor) (epo) > With both source and drain contacts in same substrate side (epo)
Description: This subclass is indented under subclass E29.257. This subclass is substantially the same in scope as ECLA classification H01L29/78B2C.










Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8686498 Lateral double diffused MOS device and method for manufacturing the same Apr. 1, 2014
8674471 Semiconductor device supplying charging current to element to be charged Mar. 18, 2014
8624332 Vertical conduction power electronic device and corresponding realization method Jan. 7, 2014
8610206 Split-gate lateral diffused metal oxide semiconductor device Dec. 17, 2013
8598026 Semiconductor device and method of manufacturing the same Dec. 3, 2013
8581344 Laterally diffused metal oxide semiconductor transistors Nov. 12, 2013
8564061 Semiconductor device Oct. 22, 2013
8536042 Method of forming a topside contact to a backside terminal of a semiconductor device Sep. 17, 2013
8530961 Compatible vertical double diffused metal oxide semiconductor transistor and lateral double diffused metal oxide semiconductor transistor and manufacture method thereof Sep. 10, 2013
8350327 High voltage device with reduced leakage Jan. 8, 2013
8299548 Method for manufacturing semiconductor device and semiconductor device Oct. 30, 2012
8198677 Trench-gate LDMOS structures Jun. 12, 2012
8193585 Semiconductor device with increased snapback voltage Jun. 5, 2012
8178930 Structure to improve MOS transistor on-breakdown voltage May. 15, 2012
8129783 Lateral power MOSFET with high breakdown voltage and low on-resistance Mar. 6, 2012
8125030 High voltage SCRMOS in BiCMOS process technologies Feb. 28, 2012
8120108 High voltage SCRMOS in BiCMOS process technologies Feb. 21, 2012
8053820 Semiconductor device and method of manufacturing the same Nov. 8, 2011
8039902 Semiconductor devices having Si and SiGe epitaxial layers Oct. 18, 2011
8004040 Semiconductor device and its manufacturing method Aug. 23, 2011
8004051 Lateral trench MOSFET having a field plate Aug. 23, 2011
7986005 Short circuit limiting in power semiconductor devices Jul. 26, 2011
7982264 Semiconductor device Jul. 19, 2011
7943988 Power MOSFET with a gate structure of different material May. 17, 2011
7915602 Phase change memory device and fabrication method thereof Mar. 29, 2011
7915677 Lateral power MOSFET with high breakdown voltage and low on-resistance Mar. 29, 2011
7906810 LDMOS device for ESD protection circuit Mar. 15, 2011
7888734 High-voltage MOS devices having gates extending into recesses of substrates Feb. 15, 2011
7851853 Semiconductor device comprising high-withstand voltage MOSFET and its manufacturing method Dec. 14, 2010
7843002 Fully isolated high-voltage MOS device Nov. 30, 2010
7829408 Laterally double-diffused metal oxide semiconductor transistor and method for fabricating the same Nov. 9, 2010
7829947 Bottom-drain LDMOS power MOSFET structure having a top drain strap Nov. 9, 2010
7781834 Robust ESD LDMOS device Aug. 24, 2010
7763893 Silicon carbide semiconductor device Jul. 27, 2010
7737526 Isolated trench MOSFET in epi-less semiconductor sustrate Jun. 15, 2010
7718505 Method of forming a semiconductor structure comprising insulating layers with different thicknesses May. 18, 2010
7687853 System and method for making a LDMOS device with electrostatic discharge protection Mar. 30, 2010
7675120 Integrated circuit having a multipurpose resistor for suppression of a parasitic transistor or other purposes Mar. 9, 2010
7667268 Isolated transistor Feb. 23, 2010
7667270 Double trench for isolation of semiconductor devices Feb. 23, 2010
7655978 Semiconductor structure Feb. 2, 2010
7652307 Semiconductor device with two overlapping diffusion layers held at floating voltage for improving withstand voltage Jan. 26, 2010
7629647 Trench MOS structure Dec. 8, 2009
7589377 Gate structure with low resistance for high power semiconductor devices Sep. 15, 2009
7576388 Trench-gate LDMOS structures Aug. 18, 2009
7550803 Vertical double-diffusion metal-oxide-semiconductor transistor device Jun. 23, 2009
7544558 Method for integrating DMOS into sub-micron CMOS process Jun. 9, 2009
7531876 Semiconductor device having power semiconductor elements May. 12, 2009
7511319 Methods and apparatus for a stepped-drift MOSFET Mar. 31, 2009
7423315 Semiconductor device and method for manufacturing the same Sep. 9, 2008

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