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Class Information
Number: 257/E29.257
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With channel containing layer contacting drain drift region (e.g., dmos transistor) (epo) > Having vertical bulk current component or current vertically following trench gate (e.g., vertical power dmos transistor) (epo)
Description: This subclass is indented under subclass E29.256. This subclass is substantially the same in scope as ECLA classification H01L29/78B2.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.258 With both source and drain contacts in same substrate side (epo) 213
257/E29.259 With nonplanar surface (epo) 218


Patents under this class:

Patent Number Title Of Patent Date Issued
8704295 Schottky and MOSFET+Schottky structures, devices, and methods Apr. 22, 2014
8704292 Vertical capacitive depletion field effect transistor Apr. 22, 2014
8692323 Semiconductor device with peripheral base region connected to main electrode Apr. 8, 2014
8692320 Recessed memory cell access devices and gate electrodes Apr. 8, 2014
8686492 Non-volatile FINFET memory device and manufacturing method thereof Apr. 1, 2014
8680610 Trench MOSFET having floating dummy cells for avalanche improvement Mar. 25, 2014
8680608 Power semiconductor device with a low on resistence Mar. 25, 2014
8680607 Trench gated power device with multiple trench width and its fabrication process Mar. 25, 2014
8674439 Low loss SiC MOSFET Mar. 18, 2014
8659078 Semiconductor device and method of manufacturing the same Feb. 25, 2014
8643090 Semiconductor devices and methods for manufacturing a semiconductor device Feb. 4, 2014
8643086 Semiconductor component with high breakthrough tension and low forward resistance Feb. 4, 2014
8633512 Device and associated semiconductor package for limiting drain-source voltage of transformer-coupled push pull power conversion circuit Jan. 21, 2014
8629499 Vertical MOSFET device Jan. 14, 2014
8618599 Method of manufacture for a semiconductor device Dec. 31, 2013
8592895 Field effect transistor with source, heavy body region and shielded gate Nov. 26, 2013
8592893 Power semiconductor device Nov. 26, 2013
8587047 Capacitor formation for a pumping circuit Nov. 19, 2013
8575690 Super-junction trench MOSFET having deep trenches with buried voids Nov. 5, 2013
8575685 Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply path Nov. 5, 2013
8564058 Super-junction trench MOSFET with multiple trenched gates in unit cell Oct. 22, 2013
8564051 Power semiconductor device with buried source electrode Oct. 22, 2013
8564024 Trench-based power semiconductor devices with increased breakdown voltage characteristics Oct. 22, 2013
8541839 Semiconductor component and method for producing it Sep. 24, 2013
8541775 Schottky diode, resistive memory device having schottky diode and method of manufacturing the same Sep. 24, 2013
8530963 Power semiconductor device and method therefor Sep. 10, 2013
8518777 Method for forming accumulation-mode field effect transistor with improved current capability Aug. 27, 2013
8507986 Silicon-carbide MOSFET cell structure and method for forming same Aug. 13, 2013
8502315 Semiconductor device with improved on-resistance Aug. 6, 2013
8502314 Multi-level options for power MOSFETS Aug. 6, 2013
8502313 Double layer metal (DLM) power MOSFET Aug. 6, 2013
8497549 Method and structure for shielded gate trench FET Jul. 30, 2013
8492816 Deep trench decoupling capacitor Jul. 23, 2013
8487370 Trench semiconductor device and method of manufacturing Jul. 16, 2013
8486784 Vertical semiconductor device and method of manufacturing the same Jul. 16, 2013
8482085 Power MOS electronic device and corresponding realizing method Jul. 9, 2013
8482064 Termination for superjunction VDMOSFET Jul. 9, 2013
8476702 Semiconductor device Jul. 2, 2013
8466514 Semiconductor power device integrated with improved gate source ESD clamp diodes Jun. 18, 2013
8466510 Staggered column superjunction Jun. 18, 2013
8461648 Semiconductor component with a drift region and a drift control region Jun. 11, 2013
8455320 Inverted-trench grounded-source FET structure using conductive substrates, with highly doped substrates Jun. 4, 2013
8455318 Process for manufacturing a power semiconductor device having charge-balance columnar structures on a non-planar surface, and corresponding power semiconductor device Jun. 4, 2013
8431988 Lateral trench transistor, as well as a method for its production Apr. 30, 2013
8421147 MOS transistor with elevated gate drain capacity Apr. 16, 2013
8421145 Power semiconductor device Apr. 16, 2013
8420487 Power MOS electronic device and corresponding realizing method Apr. 16, 2013
8409954 Ultra-low drain-source resistance power MOSFET Apr. 2, 2013
8405145 Semiconductor device and method of manufacturing the same Mar. 26, 2013
8399924 High voltage transistor using diluted drain Mar. 19, 2013











 
 
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