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Class Information
Number: 257/E29.256
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With channel containing layer contacting drain drift region (e.g., dmos transistor) (epo)
Description: This subclass is indented under subclass E29.255. This subclass is substantially the same in scope as ECLA classification H01L29/78B.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.257 Having vertical bulk current component or current vertically following trench gate (e.g., vertical power dmos transistor) (epo) 1,043
257/E29.261 With at least part of active region on insulating substrate (e.g., lateral dmos in oxide isolated well) (epo) 219


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14

Patent Number Title Of Patent Date Issued
8709900 Double diffused metal oxide semiconductor device and manufacturing method thereof Apr. 29, 2014
8704301 Devices, methods, and systems with MOS-gated trench-to-trench lateral current flow Apr. 22, 2014
8704312 High voltage devices and methods of forming the high voltage devices Apr. 22, 2014
8692327 Lateral double diffused metal oxide semiconductor device and method for manufacturing the same Apr. 8, 2014
8692326 High voltage metal-oxide-semiconductor transistor device and layout pattern thereof Apr. 8, 2014
8692325 Semiconductor device and method of manufacturing the same Apr. 8, 2014
8692324 Semiconductor devices having charge balanced structure Apr. 8, 2014
8692289 Fast turn on silicon controlled rectifiers for ESD protection Apr. 8, 2014
8685824 Hybrid high voltage device and manufacturing method thereof Apr. 1, 2014
8686505 Lateral semiconductor device and manufacturing method therefor Apr. 1, 2014
8674441 High voltage metal-oxide-semiconductor transistor device Mar. 18, 2014
8674436 Lateral double diffusion metal-oxide semiconductor device and method for manufacturing the same Mar. 18, 2014
8674435 Semiconductor integrated circuit device and method of manufacturing the same Mar. 18, 2014
8673712 Power transistor with high voltage counter implant Mar. 18, 2014
8664718 Power MOSFETs and methods for forming the same Mar. 4, 2014
8664716 Semiconductor device, method of manufacturing the same and power-supply device using the same Mar. 4, 2014
8664719 High voltage device with reduced leakage Mar. 4, 2014
8659073 Semiconductor device Feb. 25, 2014
8653594 Double diffused metal oxide semiconductor device and manufacturing method thereof Feb. 18, 2014
8648416 LDMOS sense transistor structure for current sensing at high voltage Feb. 11, 2014
8643104 Lateral diffusion metal oxide semiconductor transistor structure Feb. 4, 2014
8643137 Short channel lateral MOSFET Feb. 4, 2014
8629498 Power semiconductor device and method for manufacturing the power semiconductor device Jan. 14, 2014
8618602 Semiconductor device and method of forming the same Dec. 31, 2013
8614484 High voltage device with partial silicon germanium epi source/drain Dec. 24, 2013
8610206 Split-gate lateral diffused metal oxide semiconductor device Dec. 17, 2013
8604541 Structure and fabrication process of super junction MOSFET Dec. 10, 2013
8598657 Semiconductor device Dec. 3, 2013
8598658 High voltage LDMOS device Dec. 3, 2013
8592906 High-voltage semiconductor device with lateral series capacitive structure Nov. 26, 2013
8587055 Integrated circuit using a superjunction semiconductor device Nov. 19, 2013
8581338 Lateral-diffused metal oxide semiconductor device (LDMOS) and fabrication method thereof Nov. 12, 2013
8581340 Semiconductor device of which breakdown voltage is improved Nov. 12, 2013
8575692 Near zero channel length field drift LDMOS Nov. 5, 2013
8558307 Semiconductor device with diffused MOS transistor and manufacturing method of the same Oct. 15, 2013
8552497 Semiconductor device Oct. 8, 2013
8546877 Semiconductor device Oct. 1, 2013
8546878 Semiconductor device incorporating charge balancing Oct. 1, 2013
8546879 High density lateral DMOS with recessed source contact Oct. 1, 2013
8541848 High-voltage MOSFETs having current diversion region in substrate near fieldplate Sep. 24, 2013
8530969 Semiconductor device Sep. 10, 2013
8530965 Semiconductor device Sep. 10, 2013
8530300 Semiconductor device with drift regions and compensation regions Sep. 10, 2013
8525259 Semiconductor device Sep. 3, 2013
8513766 Semiconductor device having a drain-gate isolation portion Aug. 20, 2013
8507985 Semiconductor device Aug. 13, 2013
8507983 High voltage device Aug. 13, 2013
8507988 High voltage devices, systems, and methods for forming the high voltage devices Aug. 13, 2013
8502281 Integrated circuit having vertical compensation component Aug. 6, 2013
8492836 Power semiconductor device Jul. 23, 2013

1 2 3 4 5 6 7 8 9 10 11 12 13 14










 
 
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