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Class Information
Number: 257/E29.255
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo)
Description: This subclass is indented under subclass E29.242. This subclass is substantially the same in scope as ECLA classification H01L29/78.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.263 Comprising gate-to-body connection (i.e., bulk dynamic threshold voltage mosfet) (epo) 41
257/E29.272 Gate comprising ferroelectric layer (epo) 182
257/E29.273 Thin-film transistor (epo) 376
257/E29.262 Vertical transistor (epo) 717
257/E29.27 With buried channel (epo) 188
257/E29.256 With channel containing layer contacting drain drift region (e.g., dmos transistor) (epo) 700
257/E29.309 With charge trapping gate insulator (e.g., mnos-memory transistors) (epo) 876
257/E29.3 With floating gate (epo) 465
257/E29.266 With lightly doped drain or source extension (epo) 658
257/E29.264 With multiple gate structure (epo) 317
257/E29.271 With schottky drain or source contact (epo) 114

Patents under this class:

Patent Number Title Of Patent Date Issued
8710557 MOS transistor having combined-source structure with low power consumption and method for fabricating the same Apr. 29, 2014
8710556 Semiconductor device comprising a Fin and method for manufacturing the same Apr. 29, 2014
8709929 Methods of forming semiconductor devices having diffusion regions of reduced width Apr. 29, 2014
8709897 High performance strained source-drain structure and method of fabricating the same Apr. 29, 2014
8704328 High-voltage integrated circuit device Apr. 22, 2014
8691681 Semiconductor device having a metal gate and fabricating method thereof Apr. 8, 2014
8686517 Self-aligned insulating etchstop layer on a metal contact Apr. 1, 2014
8686485 Semiconductor devices and methods of manufacturing the same Apr. 1, 2014
8685808 Semiconductor device fabrication method Apr. 1, 2014
8680629 Control of flatband voltages and threshold voltages in high-k metal gate stacks and structures for CMOS devices Mar. 25, 2014
8680576 CMOS device and method of forming the same Mar. 25, 2014
8674459 Three-dimensional memory devices and methods of manufacturing and operating the same Mar. 18, 2014
8674458 Transistors with embedded strain-inducing material formed in cavities provided by an oxidizing etch process Mar. 18, 2014
8674444 Structure and method of forming a transistor with asymmetric channel and source/drain regions Mar. 18, 2014
8673754 Method of forming gate dielectric layer and method of fabricating semiconductor device Mar. 18, 2014
8673700 Superjunction structures for power devices and methods of manufacture Mar. 18, 2014
8673675 Humidity control and method for thin film photovoltaic materials Mar. 18, 2014
8669620 Semiconductor device and method of manufacturing the same Mar. 11, 2014
8669612 Technique for forming the deep doped columns in superjunction Mar. 11, 2014
8669163 Tunnel field-effect transistors with superlattice channels Mar. 11, 2014
8669162 Semiconductor device and method of manufacturing the same Mar. 11, 2014
8664719 High voltage device with reduced leakage Mar. 4, 2014
8664653 Semiconductor device and method for manufacturing semiconductor device Mar. 4, 2014
8664050 Structure and method to improve ETSOI MOSFETS with back gate Mar. 4, 2014
8659096 Semiconductor device Feb. 25, 2014
8659090 Resistive memory and methods for forming the same Feb. 25, 2014
8659089 Nitrogen passivation of source and drain recesses Feb. 25, 2014
8659006 Techniques for metal gate work function engineering to enable multiple threshold voltage nanowire FET devices Feb. 25, 2014
8658539 Fin profile structure and method of making same Feb. 25, 2014
8658507 MOSFET structure and method of fabricating the same using replacement channel layer Feb. 25, 2014
8658488 Method for forming semiconductor chip with graphene based devices in an interconnect structure of the chip Feb. 25, 2014
8653611 Semiconductor device with metal gates and method for fabricating the same Feb. 18, 2014
8653609 FinFET design with reduced current crowding Feb. 18, 2014
8653608 FinFET design with reduced current crowding Feb. 18, 2014
8653560 Semiconductor device and fabrication method thereof Feb. 18, 2014
8653536 Method for manufacturing semiconductor substrate, and semiconductor device Feb. 18, 2014
8648426 Tunneling transistors Feb. 11, 2014
8648420 Semiconductor device Feb. 11, 2014
8648410 Electronic device including a gate electrode and a gate tap Feb. 11, 2014
8648400 FinFET semiconductor device with germanium (GE) fins Feb. 11, 2014
8648396 Microsystem for analyzing blood Feb. 11, 2014
8647935 Buried oxidation for enhanced mobility Feb. 11, 2014
8643101 High voltage metal oxide semiconductor device having a multi-segment isolation structure Feb. 4, 2014
8642997 Transistor device with reduced gate resistance Feb. 4, 2014
8642471 Semiconductor structure and method for manufacturing the same Feb. 4, 2014
8637375 Method of manufacturing a tunnel transistor and IC comprising the same Jan. 28, 2014
8634222 Memory devices having select gates with P type bodies, memory strings having separate source lines and methods Jan. 21, 2014
8633481 Semiconductor device and process for production thereof Jan. 21, 2014
8633106 Heterojunction bipolar transistors and methods of manufacture Jan. 21, 2014
8629503 Asymmetrical transistor device and method of fabrication Jan. 14, 2014

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