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Class Information
Number: 257/E29.254
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With delta-doped channel (epo)
Description: This subclass is indented under subclass E29.242. This subclass is substantially the same in scope as ECLA classification H01L29/772C.










Patents under this class:

Patent Number Title Of Patent Date Issued
8652959 n- and p-channel field effect transistors with single quantum well for complementary circuits Feb. 18, 2014
8633518 Gallium nitride power devices Jan. 21, 2014
8604549 Multi-gate field-effect transistor with enhanced and adaptable low-frequency noise Dec. 10, 2013
8482035 Enhancement mode III-nitride transistors with single gate Dielectric structure Jul. 9, 2013
8461664 N- and p-channel field-effect transistors with single quantum well for complementary circuits Jun. 11, 2013
8384130 Nitride semiconductor device having a two-dimensional electron gas (2DEG) channel Feb. 26, 2013
8344424 Enhancement mode gallium nitride power devices Jan. 1, 2013
8264004 Mechanism for forming a remote delta doping layer of a quantum well structure Sep. 11, 2012
8193562 Enhancement mode gallium nitride power devices Jun. 5, 2012
8183595 Normally off III-nitride semiconductor device having a programmable gate May. 22, 2012
7999314 Semiconductor device and manufacturing method thereof Aug. 16, 2011
7915642 Apparatus and methods for forming a modulation doped non-planar transistor Mar. 29, 2011
7915643 Enhancement mode gallium nitride power devices Mar. 29, 2011
7859018 Semiconductor device having nitride semiconductor layer Dec. 28, 2010
7777254 Normally-off field-effect semiconductor device Aug. 17, 2010
7700975 Schottky barrier metal-germanium contact in metal-germanium-metal photodetectors Apr. 20, 2010
7663161 Transistor for preventing current collapse and having improved leakage current characteristics and method for fabricating the same Feb. 16, 2010
7508014 Field effect transistor including a gate electrode and an additional electrode Mar. 24, 2009
7473929 Semiconductor device and method for fabricating the same Jan. 6, 2009
7429747 Sb-based CMOS devices Sep. 30, 2008
6995397 Semiconductor device Feb. 7, 2006
6940127 Equipment for communication system and semiconductor integrated circuit device Sep. 6, 2005
6864507 MISFET Mar. 8, 2005
6674131 Semiconductor power device for high-temperature applications Jan. 6, 2004
6654604 Equipment for communication system Nov. 25, 2003
6617653 MISFET Sep. 9, 2003
6380013 Method for forming semiconductor device having epitaxial channel layer using laser treatment Apr. 30, 2002
5373186 Bipolar transistor with monoatomic base layer between emitter and collector layers Dec. 13, 1994
5329150 Semiconductor photodetector devices with pairs of monoatomic layers separated by intrinsic layers Jul. 12, 1994
5298441 Method of making high transconductance heterostructure field effect transistor Mar. 29, 1994
5216260 Optically bistable semiconductor device with pairs of monoatomic layers separated by intrinsic layers Jun. 1, 1993
5212104 Method for manufacturing an MOS transistor May. 18, 1993
5206527 Field effect transistor Apr. 27, 1993
5151758 Planar-doped valley field effect transistor (PDVFET) Sep. 29, 1992
5060234 Injection laser with at least one pair of monoatomic layers of doping atoms Oct. 22, 1991
4980731 Atomic planar-doped field-effect transistor Dec. 25, 1990
4942438 Compound semiconductor field-effect transistor Jul. 17, 1990
4882609 Semiconductor devices with at least one monoatomic layer of doping atoms Nov. 21, 1989











 
 
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