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Class Information
Number: 257/E29.253
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With two-dimensional charge carrier gas channel (e.g., hemt; with two-dimensional charge-carrier layer formed at heterojunction interface) (epo) > With direct single heterostructure (i.e., with wide bandgap layer formed on top of active layer (e.g., direct single heterostructure mis-like hemt)) (epo) > With wide bandgap charge-carrier supplying layer (e.g., direct single heterostructure modfet) (epo)
Description: This subclass is indented under subclass E29.252. This subclass is substantially the same in scope as ECLA classification H01L29/778E2.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
6982204 Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses Jan. 3, 2006
6953740 Highly doped III-nitride semiconductors Oct. 11, 2005
6933181 Method for fabricating semiconductor device Aug. 23, 2005
6909186 High performance FET devices and methods therefor Jun. 21, 2005
6908799 High electron mobility transistor and method of manufacturing the same Jun. 21, 2005
6903385 Semiconductor structure having a textured nitride-based layer Jun. 7, 2005
6888170 Highly doped III-nitride semiconductors May. 3, 2005
6878593 Metal oxide semiconductor heterostructure field effect transistor Apr. 12, 2005
6870203 Field-effect semiconductor device and method for making the same Mar. 22, 2005
6864510 Nitride semiconductor field effect transistor (FET) and method of fabricating the same Mar. 8, 2005
6830945 Method for fabricating a non-planar nitride-based heterostructure field effect transistor Dec. 14, 2004
6825559 Group III nitride based flip-chip intergrated circuit and method for fabricating Nov. 30, 2004
6774434 Field effect device having a drift region and field shaping region used as capacitor dielectric Aug. 10, 2004
6762083 Method for manufacturing heterojunction field effect transistor device Jul. 13, 2004
6703649 Semiconductor element Mar. 9, 2004
6696306 Methods of fabricating layered structure and semiconductor device Feb. 24, 2004
6689652 Method of manufacturing a high electron mobility transistor Feb. 10, 2004
6690042 Metal oxide semiconductor heterostructure field effect transistor Feb. 10, 2004
6605831 Field-effect semiconductor device Aug. 12, 2003
6586319 High-speed compound semiconductor device having a minimized parasitic capacitance and resistance Jul. 1, 2003
6583454 Nitride based transistors on semi-insulating silicon carbide substrates Jun. 24, 2003
6555851 High electron mobility transistor Apr. 29, 2003
6534801 GaN-based high electron mobility transistor Mar. 18, 2003
6521998 Electrode structure for nitride III-V compound semiconductor devices Feb. 18, 2003
6486502 Nitride based transistors on semi-insulating silicon carbide substrates Nov. 26, 2002
6429467 Heterojunction field effect transistor Aug. 6, 2002
6316793 Nitride based transistors on semi-insulating silicon carbide substrates Nov. 13, 2001
6262444 Field-effect semiconductor device with a recess profile Jul. 17, 2001
6242765 Field effect transistor and its manufacturing method Jun. 5, 2001
6232624 InPSb channel HEMT on InP for RF application May. 15, 2001
6221700 Method of manufacturing silicon carbide semiconductor device with high activation rate of impurities Apr. 24, 2001
6160274 Reduced 1/f low frequency noise high electron mobility transistor Dec. 12, 2000
6146931 Method of forming a semiconductor device having a barrier layer interposed between the ohmic contact and the schottky contact Nov. 14, 2000
6121641 Compound semiconductor field-effect transistor with improved current flow characteristic Sep. 19, 2000
6075262 Semiconductor device having T-shaped gate electrode Jun. 13, 2000
6011281 Semiconductor device having an ohmic contact and a Schottky contact, with a barrier layer interposed between the ohmic contact and the Schottky contact Jan. 4, 2000
5981986 Semiconductor device having a heterojunction Nov. 9, 1999
5949096 Field effect transistor with stabilized threshold voltage Sep. 7, 1999
5940694 Field effect transistor process with semiconductor mask, single layer integrated metal, and dual etch stops Aug. 17, 1999
5939737 High-speed compound semiconductor device having a minimized parasitic capacitance and resistance Aug. 17, 1999
5932889 Semiconductor device with floating quantum box Aug. 3, 1999
5892247 Semiconductor device and a manufacturing method thereof Apr. 6, 1999
5889288 Semiconductor quantum dot device Mar. 30, 1999
5701017 Semiconductor device and method for its manufacture Dec. 23, 1997
5698870 High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal Dec. 16, 1997
5698868 High-speed heterojunction transistor Dec. 16, 1997
5686740 Field effect transistor with recessed gate Nov. 11, 1997
5686325 Method for forming MESFET having T-shaped gate electrode Nov. 11, 1997
5557141 Method of doping, semiconductor device, and method of fabricating semiconductor device Sep. 17, 1996
5514883 Field effect transistor May. 7, 1996

1 2 3 4










 
 
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