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Class Information
Number: 257/E29.253
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With two-dimensional charge carrier gas channel (e.g., hemt; with two-dimensional charge-carrier layer formed at heterojunction interface) (epo) > With direct single heterostructure (i.e., with wide bandgap layer formed on top of active layer (e.g., direct single heterostructure mis-like hemt)) (epo) > With wide bandgap charge-carrier supplying layer (e.g., direct single heterostructure modfet) (epo)
Description: This subclass is indented under subclass E29.252. This subclass is substantially the same in scope as ECLA classification H01L29/778E2.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8674409 Heterojunction field effect transistor, method for producing heterojunction field effect transistor, and electronic device Mar. 18, 2014
8648390 Transistor with enhanced channel charge inducing material layer and threshold voltage control Feb. 11, 2014
8633494 Semiconductor device and method for manufacturing semiconductor device Jan. 21, 2014
8633518 Gallium nitride power devices Jan. 21, 2014
8592871 Nitride semiconductor device and method of manufacturing nitride semiconductor device Nov. 26, 2013
8507949 Semiconductor device Aug. 13, 2013
8415766 Process for smoothening III-N substrates Apr. 9, 2013
8384129 Transistor with enhanced channel charge inducing material layer and threshold voltage control Feb. 26, 2013
8384130 Nitride semiconductor device having a two-dimensional electron gas (2DEG) channel Feb. 26, 2013
8344424 Enhancement mode gallium nitride power devices Jan. 1, 2013
8269277 RESURF device including increased breakdown voltage Sep. 18, 2012
8242539 Field effect transistor with carrier transit layer in mesa having inclined sides Aug. 14, 2012
8242599 Electronic component with diffusion barrier layer Aug. 14, 2012
8193562 Enhancement mode gallium nitride power devices Jun. 5, 2012
8183597 GaN semiconductor device having a high withstand voltage May. 22, 2012
8174048 III-nitride current control device and method of manufacture May. 8, 2012
8125004 Field-effect semiconductor device Feb. 28, 2012
8043906 Method of forming a III-nitride selective current carrying device including a contact in a recess Oct. 25, 2011
8044414 Semiconductor layered structure and its method of formation, and light emitting device Oct. 25, 2011
8026509 Tunnel field effect transistor and method of manufacturing same Sep. 27, 2011
8013320 Nitride semiconductor device and method for fabricating the same Sep. 6, 2011
7973335 Field-effect transistor having group III nitride electrode structure Jul. 5, 2011
7935983 Nitride semiconductor device May. 3, 2011
7915643 Enhancement mode gallium nitride power devices Mar. 29, 2011
7888207 Transistor structures and methods for making the same Feb. 15, 2011
7859018 Semiconductor device having nitride semiconductor layer Dec. 28, 2010
7855401 Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides Dec. 21, 2010
7821030 Semiconductor device and method for manufacturing the same Oct. 26, 2010
7777254 Normally-off field-effect semiconductor device Aug. 17, 2010
7759700 Semiconductor device Jul. 20, 2010
7728355 Nitrogen polar III-nitride heterojunction JFET Jun. 1, 2010
7719030 Aluminum alloys for low resistance, ohmic contacts to III-nitride or compound semiconductor May. 18, 2010
7700975 Schottky barrier metal-germanium contact in metal-germanium-metal photodetectors Apr. 20, 2010
7663161 Transistor for preventing current collapse and having improved leakage current characteristics and method for fabricating the same Feb. 16, 2010
7652311 III-nitride device with reduced piezoelectric polarization Jan. 26, 2010
7635877 Nitride semiconductor device and manufacturing method thereof Dec. 22, 2009
7598131 High power-low noise microwave GaN heterojunction field effect transistor Oct. 6, 2009
7592647 Semiconductor device and manufacturing method thereof Sep. 22, 2009
7560752 Field effect transistor including two group III-V compound semiconductor layers Jul. 14, 2009
7550784 Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses Jun. 23, 2009
7508014 Field effect transistor including a gate electrode and an additional electrode Mar. 24, 2009
7485901 Highly doped III-nitride semiconductors Feb. 3, 2009
7470941 High power-low noise microwave GaN heterojunction field effect transistor Dec. 30, 2008
7400001 Nitride based hetero-junction field effect transistor Jul. 15, 2008
7075125 Power semiconductor device Jul. 11, 2006
7071526 Semiconductor device having Schottky junction electrode Jul. 4, 2006
7064359 Switching semiconductor device and switching circuit Jun. 20, 2006
7038253 GaN-based field effect transistor of a normally-off type May. 2, 2006
7019336 Semiconductor device and method for manufacturing the same Mar. 28, 2006
7002189 Compound semiconductor device Feb. 21, 2006

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