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Class Information
Number: 257/E29.252
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With two-dimensional charge carrier gas channel (e.g., hemt; with two-dimensional charge-carrier layer formed at heterojunction interface) (epo) > With direct single heterostructure (i.e., with wide bandgap layer formed on top of active layer (e.g., direct single heterostructure mis-like hemt)) (epo)
Description: This subclass is indented under subclass E29.246. This subclass is substantially the same in scope as ECLA classification H01L29/778E.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.253 With wide bandgap charge-carrier supplying layer (e.g., direct single heterostructure modfet) (epo) 186


Patents under this class:
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Patent Number Title Of Patent Date Issued
8652959 n- and p-channel field effect transistors with single quantum well for complementary circuits Feb. 18, 2014
8648390 Transistor with enhanced channel charge inducing material layer and threshold voltage control Feb. 11, 2014
8633470 Techniques and configurations to impart strain to integrated circuit devices Jan. 21, 2014
8633494 Semiconductor device and method for manufacturing semiconductor device Jan. 21, 2014
8633518 Gallium nitride power devices Jan. 21, 2014
8629480 Hetero-junction tunneling transistor Jan. 14, 2014
8581300 Compound semiconductor device and method of manufacturing the same Nov. 12, 2013
8564022 Power device and method for manufacturing the same Oct. 22, 2013
8546852 Semiconductor device Oct. 1, 2013
8507949 Semiconductor device Aug. 13, 2013
8487375 Semiconductor device and method of manufacturing semiconductor device Jul. 16, 2013
8482035 Enhancement mode III-nitride transistors with single gate Dielectric structure Jul. 9, 2013
8461664 N- and p-channel field-effect transistors with single quantum well for complementary circuits Jun. 11, 2013
8455922 Programmable gate III-nitride semiconductor device Jun. 4, 2013
8404508 Enhancement mode GaN HEMT device and method for fabricating the same Mar. 26, 2013
8384129 Transistor with enhanced channel charge inducing material layer and threshold voltage control Feb. 26, 2013
8384130 Nitride semiconductor device having a two-dimensional electron gas (2DEG) channel Feb. 26, 2013
8378334 Low power floating body memory cell based on low-bandgap-material quantum well Feb. 19, 2013
8362552 MOSFET device with reduced breakdown voltage Jan. 29, 2013
8350293 Field effect transistor and method of manufacturing the same Jan. 8, 2013
8350296 Enhancement mode III-nitride device with floating gate and process for its manufacture Jan. 8, 2013
8344424 Enhancement mode gallium nitride power devices Jan. 1, 2013
8193562 Enhancement mode gallium nitride power devices Jun. 5, 2012
8183595 Normally off III-nitride semiconductor device having a programmable gate May. 22, 2012
8174048 III-nitride current control device and method of manufacture May. 8, 2012
8125004 Field-effect semiconductor device Feb. 28, 2012
8115235 Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using same Feb. 14, 2012
8043906 Method of forming a III-nitride selective current carrying device including a contact in a recess Oct. 25, 2011
8035130 Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity region Oct. 11, 2011
7999286 MIS field effect transistor and method for manufacturing the same Aug. 16, 2011
7968865 Boron aluminum nitride diamond heterostructure Jun. 28, 2011
7964866 Low power floating body memory cell based on low bandgap material quantum well Jun. 21, 2011
7956383 Field effect transistor Jun. 7, 2011
7915646 Nitride semiconductor material, semiconductor element, and manufacturing method thereof Mar. 29, 2011
7915643 Enhancement mode gallium nitride power devices Mar. 29, 2011
7858964 Semiconductor device formed in a recrystallized layer Dec. 28, 2010
7825434 Nitride semiconductor device Nov. 2, 2010
7821032 III-nitride power semiconductor device Oct. 26, 2010
7800130 Semiconductor devices Sep. 21, 2010
7786509 Field-effect transistor and method of making same Aug. 31, 2010
7777254 Normally-off field-effect semiconductor device Aug. 17, 2010
7759699 III-nitride enhancement mode devices Jul. 20, 2010
7750381 Semiconductor device and method of manufacturing semiconductor device Jul. 6, 2010
7700973 GaN/AlGaN/GaN dispersion-free high electron mobility transistors Apr. 20, 2010
7700975 Schottky barrier metal-germanium contact in metal-germanium-metal photodetectors Apr. 20, 2010
7683400 Semiconductor heterojunction devices based on SiC Mar. 23, 2010
7652311 III-nitride device with reduced piezoelectric polarization Jan. 26, 2010
7649215 III-nitride device passivation and method Jan. 19, 2010
7642567 Field-effect transistor and method of manufacturing the same Jan. 5, 2010
7518165 Epitaxial nucleation and buffer sequence for via-compatible InAs/AlGaSb HEMTs Apr. 14, 2009

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