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Class Information
Number: 257/E29.251
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With two-dimensional charge carrier gas channel (e.g., hemt; with two-dimensional charge-carrier layer formed at heterojunction interface) (epo) > With confinement of carriers by at least two heterojunctions (e.g., dhhemt, quantum well hemt, dhmodfet) (epo) > Using group iii-v semiconductor material (epo) > With delta or planar doped donor layer (epo)
Description: This subclass is indented under subclass E29.249. This subclass is substantially the same in scope as ECLA classification H01L29/778C2B.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8710490 Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer Apr. 29, 2014
8673733 Methods of transferring layers of material in 3D integration processes and related structures and devices Mar. 18, 2014
8652959 n- and p-channel field effect transistors with single quantum well for complementary circuits Feb. 18, 2014
8633518 Gallium nitride power devices Jan. 21, 2014
8558234 Low voltage low light imager and photodetector Oct. 15, 2013
8525231 Semiconductor device and method of manufacturing the same Sep. 3, 2013
8507329 Compound semiconductor device and method of manufacturing the same Aug. 13, 2013
8501508 Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drains Aug. 6, 2013
8476629 Enhanced wafer test line structure Jul. 2, 2013
8461664 N- and p-channel field-effect transistors with single quantum well for complementary circuits Jun. 11, 2013
8384130 Nitride semiconductor device having a two-dimensional electron gas (2DEG) channel Feb. 26, 2013
8344424 Enhancement mode gallium nitride power devices Jan. 1, 2013
8294181 Compound semiconductor device and method of manufacturing the same Oct. 23, 2012
8264004 Mechanism for forming a remote delta doping layer of a quantum well structure Sep. 11, 2012
8207556 Group III nitride semiconductor device and epitaxial substrate Jun. 26, 2012
8193562 Enhancement mode gallium nitride power devices Jun. 5, 2012
7915608 Scalable quantum well device and method for manufacturing the same Mar. 29, 2011
7915643 Enhancement mode gallium nitride power devices Mar. 29, 2011
7825434 Nitride semiconductor device Nov. 2, 2010
7777254 Normally-off field-effect semiconductor device Aug. 17, 2010
7759142 Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains Jul. 20, 2010
7700975 Schottky barrier metal-germanium contact in metal-germanium-metal photodetectors Apr. 20, 2010
7683400 Semiconductor heterojunction devices based on SiC Mar. 23, 2010
7652311 III-nitride device with reduced piezoelectric polarization Jan. 26, 2010
7612390 Heterojunction transistors including energy barriers Nov. 3, 2009
7569869 Transistor having tensile strained channel and system including same Aug. 4, 2009
7518154 Nitride semiconductor substrate and semiconductor element built thereon Apr. 14, 2009
7508014 Field effect transistor including a gate electrode and an additional electrode Mar. 24, 2009
7432538 Field-effect transistor Oct. 7, 2008
7429747 Sb-based CMOS devices Sep. 30, 2008
7170111 Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same Jan. 30, 2007
6967360 Pseudomorphic high electron mobility transistor with Schottky electrode including lanthanum and boron, and manufacturing method thereof Nov. 22, 2005
6953955 InGaAs/GaAs high electron mobility transistor Oct. 11, 2005
6943386 Pseudomorphic high electron mobility field effect transistor with high device linearity Sep. 13, 2005
6861679 Gallium indium nitride arsenide based epitaxial wafer, a hetero field effect transistor using the wafer, and a method of fabricating the hetero field effect transistor Mar. 1, 2005
6835969 Split-channel high electron mobility transistor (HEMT) device Dec. 28, 2004
6770902 Charge carrier extracting transistor Aug. 3, 2004
6747297 Semiconductor device Jun. 8, 2004
6548838 Field-effect transistor, bipolar transistor, and methods of fabricating the same Apr. 15, 2003
6528405 Enhancement mode RF device and fabrication method Mar. 4, 2003
6498360 Coupled-well structure for transport channel in field effect transistors Dec. 24, 2002
6479896 Semiconductor device having protective layer Nov. 12, 2002
6465815 High-breakdown voltage heterostructure field-effect transistor for high temperature operations Oct. 15, 2002
6160274 Reduced 1/f low frequency noise high electron mobility transistor Dec. 12, 2000
5952672 Semiconductor device and method for fabricating the same Sep. 14, 1999
5895941 Field effect transistor with electrode portions under T-shaped gate structure Apr. 20, 1999
5751029 Field-effect semiconductor device having heterojunction May. 12, 1998
5633183 FET having minimized parasitic gate capacitance May. 27, 1997
5464995 Heterostructure field effect transistor including a pulse doped channel Nov. 7, 1995
5461244 FET having minimized parasitic gate capacitance Oct. 24, 1995

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