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Class Information
Number: 257/E29.25
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With two-dimensional charge carrier gas channel (e.g., hemt; with two-dimensional charge-carrier layer formed at heterojunction interface) (epo) > With confinement of carriers by at least two heterojunctions (e.g., dhhemt, quantum well hemt, dhmodfet) (epo) > Using group iii-v semiconductor material (epo) > With more than one donor layer (epo)
Description: This subclass is indented under subclass E29.249. This subclass is substantially the same in scope as ECLA classification H01L29/778C2C.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8673733 Methods of transferring layers of material in 3D integration processes and related structures and devices Mar. 18, 2014
8664697 Transistor device Mar. 4, 2014
8633518 Gallium nitride power devices Jan. 21, 2014
8525231 Semiconductor device and method of manufacturing the same Sep. 3, 2013
8507329 Compound semiconductor device and method of manufacturing the same Aug. 13, 2013
8384130 Nitride semiconductor device having a two-dimensional electron gas (2DEG) channel Feb. 26, 2013
8344424 Enhancement mode gallium nitride power devices Jan. 1, 2013
8207556 Group III nitride semiconductor device and epitaxial substrate Jun. 26, 2012
8193562 Enhancement mode gallium nitride power devices Jun. 5, 2012
7915608 Scalable quantum well device and method for manufacturing the same Mar. 29, 2011
7915643 Enhancement mode gallium nitride power devices Mar. 29, 2011
7825434 Nitride semiconductor device Nov. 2, 2010
7777254 Normally-off field-effect semiconductor device Aug. 17, 2010
7700975 Schottky barrier metal-germanium contact in metal-germanium-metal photodetectors Apr. 20, 2010
7696535 Gallium nitride high electron mobility transistor having inner field-plate for high power applications Apr. 13, 2010
7652311 III-nitride device with reduced piezoelectric polarization Jan. 26, 2010
7508014 Field effect transistor including a gate electrode and an additional electrode Mar. 24, 2009
7445975 Method for the production of a semiconductor component having a metallic gate electrode disposed in a double-recess structure Nov. 4, 2008
7432538 Field-effect transistor Oct. 7, 2008
6992319 Ultra-linear multi-channel field effect transistor Jan. 31, 2006
6953954 Plasma oscillation switching device Oct. 11, 2005
6936839 Monolithic integrated circuit including a waveguide and quantum well inversion channel devices and a method of fabricating same Aug. 30, 2005
6903383 Semiconductor device having a high breakdown voltage for use in communication systems Jun. 7, 2005
6867078 Method for forming a microwave field effect transistor with high operating voltage Mar. 15, 2005
6853018 Semiconductor device having a channel layer, first semiconductor layer, second semiconductor layer, and a conductive impurity region Feb. 8, 2005
6849866 High performance optoelectronic and electronic inversion channel quantum well devices suitable for monolithic integration Feb. 1, 2005
6838325 Method of forming a self-aligned, selectively etched, double recess high electron mobility transistor Jan. 4, 2005
6797994 Double recessed transistor Sep. 28, 2004
6620662 Double recessed transistor Sep. 16, 2003
6605831 Field-effect semiconductor device Aug. 12, 2003
6593603 Pseudomorphic high electron mobility transistor power device Jul. 15, 2003
6573129 Gate electrode formation in double-recessed transistor by two-step etching Jun. 3, 2003
6570194 Compound semiconductor field effect transistor with improved ohmic contact layer structure and method of forming the same May. 27, 2003
6534790 Compound semiconductor field effect transistor Mar. 18, 2003
6489639 High electron mobility transistor Dec. 3, 2002
6448648 Metalization of electronic semiconductor devices Sep. 10, 2002
6429468 In0.34A10.66AsSb0.15/InP HFET utilizing InP channels Aug. 6, 2002
6410946 Semiconductor device with source and drain electrodes in ohmic contact with a semiconductor layer Jun. 25, 2002
6365925 Semiconductor device Apr. 2, 2002
6342411 Electronic component and method for manufacture Jan. 29, 2002
6281528 Ohmic contact improvement between layer of a semiconductor device Aug. 28, 2001
6271547 Double recessed transistor with resistive layer Aug. 7, 2001
6057566 Semiconductor device May. 2, 2000
5945693 Field-effect transistor Aug. 31, 1999
5900653 High electron mobility transistor having thin, low resistance schottky contact layer May. 4, 1999
5844261 InAlGaP devices Dec. 1, 1998
5811844 Low noise, high power pseudomorphic HEMT Sep. 22, 1998
5786244 Method for making GaAs-InGaAs high electron mobility transistor Jul. 28, 1998
5739558 High electron mobility transistor including asymmetrical carrier supply layers sandwiching a channel layer Apr. 14, 1998
5668387 Relaxed channel high electron mobility transistor Sep. 16, 1997

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