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Class Information
Number: 257/E29.249
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With two-dimensional charge carrier gas channel (e.g., hemt; with two-dimensional charge-carrier layer formed at heterojunction interface) (epo) > With confinement of carriers by at least two heterojunctions (e.g., dhhemt, quantum well hemt, dhmodfet) (epo) > Using group iii-v semiconductor material (epo)
Description: This subclass is indented under subclass E29.248. This subclass is substantially the same in scope as ECLA classification H01L29/778C2.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.251 With delta or planar doped donor layer (epo) 57
257/E29.25 With more than one donor layer (epo) 61

Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8674407 Semiconductor device using a group III nitride-based semiconductor Mar. 18, 2014
8653559 AlGaN/GaN hybrid MOS-HFET Feb. 18, 2014
8653561 III-nitride semiconductor electronic device, and method of fabricating III-nitride semiconductor electronic device Feb. 18, 2014
8643062 III-N device structures and methods Feb. 4, 2014
8633518 Gallium nitride power devices Jan. 21, 2014
8610172 FETs with hybrid channel materials Dec. 17, 2013
8592866 Transistor Nov. 26, 2013
8581300 Compound semiconductor device and method of manufacturing the same Nov. 12, 2013
8564021 Semiconductor device and its manufacturing method Oct. 22, 2013
8546849 High voltage cascoded III-nitride rectifier package utilizing clips on package surface Oct. 1, 2013
8525226 Field effect transistor with frequency dependent gate-channel capacitance Sep. 3, 2013
8497513 III-V nitride semiconductor device comprising a diamond layer Jul. 30, 2013
8487346 Semiconductor device Jul. 16, 2013
8466029 Compound semiconductor device and manufacturing method of the same Jun. 18, 2013
8441030 III-nitride multi-channel heterojunction interdigitated rectifier May. 14, 2013
8441035 Field effect transistor and method of manufacturing the same May. 14, 2013
8384130 Nitride semiconductor device having a two-dimensional electron gas (2DEG) channel Feb. 26, 2013
8344424 Enhancement mode gallium nitride power devices Jan. 1, 2013
8278687 Semiconductor heterostructures to reduce short channel effects Oct. 2, 2012
8253167 Method for forming antimony-based FETs monolithically Aug. 28, 2012
8253170 Electronic devices with improved OHMIC contact Aug. 28, 2012
8207556 Group III nitride semiconductor device and epitaxial substrate Jun. 26, 2012
8193562 Enhancement mode gallium nitride power devices Jun. 5, 2012
8188513 Nanowire and larger GaN based HEMTS May. 29, 2012
8169002 High electron mobility transistor and method for fabricating the same May. 1, 2012
8076698 Transistor and method for operating the same Dec. 13, 2011
8026581 Gallium nitride material devices including diamond regions and methods associated with the same Sep. 27, 2011
7982242 Warp-free semiconductor wafer, and devices using the same Jul. 19, 2011
7968865 Boron aluminum nitride diamond heterostructure Jun. 28, 2011
7968913 CMOS compatable fabrication of power GaN transistors on a <100> silicon substrate Jun. 28, 2011
7948011 N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor May. 24, 2011
7939391 III-Nitride devices with recessed gates May. 10, 2011
7932540 T-gate forming method for high electron mobility transistor and gate structure thereof Apr. 26, 2011
7932539 Enhancement-mode III-N devices, circuits, and methods Apr. 26, 2011
7915643 Enhancement mode gallium nitride power devices Mar. 29, 2011
7915608 Scalable quantum well device and method for manufacturing the same Mar. 29, 2011
7859020 Nitride semiconductor device, Doherty amplifier and drain voltage controlled amplifier Dec. 28, 2010
7851781 Buffer layers for device isolation of devices grown on silicon Dec. 14, 2010
7825434 Nitride semiconductor device Nov. 2, 2010
7795642 III-nitride devices with recessed gates Sep. 14, 2010
7777254 Normally-off field-effect semiconductor device Aug. 17, 2010
7759699 III-nitride enhancement mode devices Jul. 20, 2010
7755109 Bonded semiconductor substrate Jul. 13, 2010
7745848 Gallium nitride material devices and thermal designs thereof Jun. 29, 2010
7705371 Field effect transistor having reduced contact resistance and method for fabricating the same Apr. 27, 2010
7700975 Schottky barrier metal-germanium contact in metal-germanium-metal photodetectors Apr. 20, 2010
7700974 Process for fabricating ultra-low contact resistances in GaN-based devices Apr. 20, 2010
7696535 Gallium nitride high electron mobility transistor having inner field-plate for high power applications Apr. 13, 2010
7692222 Atomic layer deposition in the formation of gate structures for III-V semiconductor Apr. 6, 2010
7683400 Semiconductor heterojunction devices based on SiC Mar. 23, 2010

1 2 3 4 5 6 7

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