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Class Information
Number: 257/E29.248
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With two-dimensional charge carrier gas channel (e.g., hemt; with two-dimensional charge-carrier layer formed at heterojunction interface) (epo) > With confinement of carriers by at least two heterojunctions (e.g., dhhemt, quantum well hemt, dhmodfet) (epo)
Description: This subclass is indented under subclass E29.246. This subclass is substantially the same in scope as ECLA classification H01L29/778C.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.249 Using group iii-v semiconductor material (epo) 314


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8674407 Semiconductor device using a group III nitride-based semiconductor Mar. 18, 2014
8653558 Semiconductor device and method of making Feb. 18, 2014
8633470 Techniques and configurations to impart strain to integrated circuit devices Jan. 21, 2014
8633518 Gallium nitride power devices Jan. 21, 2014
8581300 Compound semiconductor device and method of manufacturing the same Nov. 12, 2013
8558285 Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials Oct. 15, 2013
8525227 Semiconductor device and method of manufacturing the same Sep. 3, 2013
8507329 Compound semiconductor device and method of manufacturing the same Aug. 13, 2013
8421122 High power gallium nitride field effect transistor switches Apr. 16, 2013
8384130 Nitride semiconductor device having a two-dimensional electron gas (2DEG) channel Feb. 26, 2013
8350296 Enhancement mode III-nitride device with floating gate and process for its manufacture Jan. 8, 2013
8344424 Enhancement mode gallium nitride power devices Jan. 1, 2013
8338862 Semiconductor device Dec. 25, 2012
8294181 Compound semiconductor device and method of manufacturing the same Oct. 23, 2012
8278687 Semiconductor heterostructures to reduce short channel effects Oct. 2, 2012
8279904 Semiconductor light-emitting device Oct. 2, 2012
8253167 Method for forming antimony-based FETs monolithically Aug. 28, 2012
8193562 Enhancement mode gallium nitride power devices Jun. 5, 2012
8188513 Nanowire and larger GaN based HEMTS May. 29, 2012
8164117 Nitride semiconductor device Apr. 24, 2012
8115235 Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using same Feb. 14, 2012
8101972 Nitride semiconductor device and method for fabricating the same Jan. 24, 2012
8026581 Gallium nitride material devices including diamond regions and methods associated with the same Sep. 27, 2011
7982242 Warp-free semiconductor wafer, and devices using the same Jul. 19, 2011
7968865 Boron aluminum nitride diamond heterostructure Jun. 28, 2011
7919791 Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same Apr. 5, 2011
7915643 Enhancement mode gallium nitride power devices Mar. 29, 2011
7863649 Nitride semiconductor device and method for fabricating the same Jan. 4, 2011
7851780 Semiconductor buffer architecture for III-V devices on silicon substrates Dec. 14, 2010
7825434 Nitride semiconductor device Nov. 2, 2010
7777253 Field-effect semiconductor device Aug. 17, 2010
7777254 Normally-off field-effect semiconductor device Aug. 17, 2010
7759699 III-nitride enhancement mode devices Jul. 20, 2010
7732836 Compound semiconductor epitaxial substrate and method for manufacturing the same Jun. 8, 2010
7700975 Schottky barrier metal-germanium contact in metal-germanium-metal photodetectors Apr. 20, 2010
7696535 Gallium nitride high electron mobility transistor having inner field-plate for high power applications Apr. 13, 2010
7683400 Semiconductor heterojunction devices based on SiC Mar. 23, 2010
7663161 Transistor for preventing current collapse and having improved leakage current characteristics and method for fabricating the same Feb. 16, 2010
7652311 III-nitride device with reduced piezoelectric polarization Jan. 26, 2010
7560752 Field effect transistor including two group III-V compound semiconductor layers Jul. 14, 2009
7557378 Boron aluminum nitride diamond heterostructure Jul. 7, 2009
7550784 Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses Jun. 23, 2009
7547910 Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device Jun. 16, 2009
7508014 Field effect transistor including a gate electrode and an additional electrode Mar. 24, 2009
7501670 Cascode circuit employing a depletion-mode, GaN-based FET Mar. 10, 2009
7476918 Semiconductor integrated circuit device and vehicle-mounted radar system using the same Jan. 13, 2009
7432538 Field-effect transistor Oct. 7, 2008
7408208 III-nitride power semiconductor device Aug. 5, 2008
7361536 Method of fabrication of a field effect transistor with materialistically different two etch stop layers in an enhanced mode transistor and an depletion mode transistor Apr. 22, 2008
7355215 Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies Apr. 8, 2008

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