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Class Information
Number: 257/E29.247
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With two-dimensional charge carrier gas channel (e.g., hemt; with two-dimensional charge-carrier layer formed at heterojunction interface) (epo) > With inverted single heterostructure (i.e., with active layer formed on top of wide bandgap layer (e.g., ihemt)) (epo)
Description: This subclass is indented under subclass E29.246. This subclass is substantially the same in scope as ECLA classification H01L29/778B.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8633518 Gallium nitride power devices Jan. 21, 2014
8629480 Hetero-junction tunneling transistor Jan. 14, 2014
8581300 Compound semiconductor device and method of manufacturing the same Nov. 12, 2013
8487319 Diamond semiconductor element and process for producing the same Jul. 16, 2013
8384130 Nitride semiconductor device having a two-dimensional electron gas (2DEG) channel Feb. 26, 2013
8350296 Enhancement mode III-nitride device with floating gate and process for its manufacture Jan. 8, 2013
8344424 Enhancement mode gallium nitride power devices Jan. 1, 2013
8344419 Compound semiconductor device and manufacturing method of the same Jan. 1, 2013
8278687 Semiconductor heterostructures to reduce short channel effects Oct. 2, 2012
8269259 Gated AlGaN/GaN heterojunction Schottky device Sep. 18, 2012
8263449 Method of manufacturing high electron mobility transistor Sep. 11, 2012
8247844 Semiconductor device and manufacturing method thereof Aug. 21, 2012
8193562 Enhancement mode gallium nitride power devices Jun. 5, 2012
7973339 Diamond semiconductor element and process for producing the same Jul. 5, 2011
7915643 Enhancement mode gallium nitride power devices Mar. 29, 2011
7825434 Nitride semiconductor device Nov. 2, 2010
7800131 Field effect transistor Sep. 21, 2010
7777253 Field-effect semiconductor device Aug. 17, 2010
7777254 Normally-off field-effect semiconductor device Aug. 17, 2010
7772055 AlGaN/GaN high electron mobility transistor devices Aug. 10, 2010
7759699 III-nitride enhancement mode devices Jul. 20, 2010
7732836 Compound semiconductor epitaxial substrate and method for manufacturing the same Jun. 8, 2010
7700975 Schottky barrier metal-germanium contact in metal-germanium-metal photodetectors Apr. 20, 2010
7696535 Gallium nitride high electron mobility transistor having inner field-plate for high power applications Apr. 13, 2010
7683400 Semiconductor heterojunction devices based on SiC Mar. 23, 2010
7652311 III-nitride device with reduced piezoelectric polarization Jan. 26, 2010
7560752 Field effect transistor including two group III-V compound semiconductor layers Jul. 14, 2009
7547928 AlGaN/GaN high electron mobility transistor devices Jun. 16, 2009
7508014 Field effect transistor including a gate electrode and an additional electrode Mar. 24, 2009
7476918 Semiconductor integrated circuit device and vehicle-mounted radar system using the same Jan. 13, 2009
7432538 Field-effect transistor Oct. 7, 2008
7361536 Method of fabrication of a field effect transistor with materialistically different two etch stop layers in an enhanced mode transistor and an depletion mode transistor Apr. 22, 2008
7352017 Nitride semiconductor device and manufacturing method thereof Apr. 1, 2008
7268375 Inverted nitride-based semiconductor structure Sep. 11, 2007
7199408 Semiconductor multilayer structure, semiconductor device and HEMT device Apr. 3, 2007
6147370 Field effect transistor with first and second drain electrodes Nov. 14, 2000
5932889 Semiconductor device with floating quantum box Aug. 3, 1999
5698868 High-speed heterojunction transistor Dec. 16, 1997
5322808 Method of fabricating inverted modulation-doped heterostructure Jun. 21, 1994
5285088 High electron mobility transistor Feb. 8, 1994
5272365 Silicon transistor device with silicon-germanium electron gas hetero structure channel Dec. 21, 1993
5266506 Method of making substantially linear field-effect transistor Nov. 30, 1993
5223724 Multiple channel high electron mobility transistor Jun. 29, 1993
RE33584 High electron mobility single heterojunction semiconductor devices May. 7, 1991
4885614 Semiconductor device with crystalline silicon-germanium-carbon alloy Dec. 5, 1989
4792832 Superlattice semiconductor having high carrier density Dec. 20, 1988
4755857 Heterostructure semiconductor device Jul. 5, 1988
4714948 HEMT with epitaxial narrow bandgap source/drain contacts isolated from wide bandgap layer Dec. 22, 1987
4695857 Superlattice semiconductor having high carrier density Sep. 22, 1987
4673959 Heterojunction FET with doubly-doped channel Jun. 16, 1987

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