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Class Information
Number: 257/E29.246
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With two-dimensional charge carrier gas channel (e.g., hemt; with two-dimensional charge-carrier layer formed at heterojunction interface) (epo)
Description: This subclass is indented under subclass E29.242. This subclass is substantially the same in scope as ECLA classification H01L29/778.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.248 With confinement of carriers by at least two heterojunctions (e.g., dhhemt, quantum well hemt, dhmodfet) (epo) 92
257/E29.252 With direct single heterostructure (i.e., with wide bandgap layer formed on top of active layer (e.g., direct single heterostructure mis-like hemt)) (epo) 92
257/E29.247 With inverted single heterostructure (i.e., with active layer formed on top of wide bandgap layer (e.g., ihemt)) (epo) 53


Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8709886 Compound semiconductor device and manufacturing method therefor Apr. 29, 2014
8710511 AIN buffer N-polar GaN HEMT profile Apr. 29, 2014
8710548 Semiconductor device and method for manufacturing the same Apr. 29, 2014
8704273 Semiconductor device and method for manufacturing the same, and amplifier Apr. 22, 2014
8692294 Semiconductor devices with field plates Apr. 8, 2014
8680579 Individually controlled multiple III-nitride half bridges Mar. 25, 2014
8680578 Field effect transistor with enhanced insulator structure Mar. 25, 2014
8680535 High electron mobility transistor structure with improved breakdown voltage performance Mar. 25, 2014
8674407 Semiconductor device using a group III nitride-based semiconductor Mar. 18, 2014
8669591 E-mode HFET device Mar. 11, 2014
8669163 Tunnel field-effect transistors with superlattice channels Mar. 11, 2014
8664695 Wide bandgap transistors with multiple field plates Mar. 4, 2014
8664696 Nitride semiconductor device Mar. 4, 2014
8659055 Semiconductor device, field-effect transistor, and electronic device Feb. 25, 2014
8653562 Structure of a high electron mobility transistor Feb. 18, 2014
8653559 AlGaN/GaN hybrid MOS-HFET Feb. 18, 2014
8648390 Transistor with enhanced channel charge inducing material layer and threshold voltage control Feb. 11, 2014
8637903 Compound semiconductor device and manufacturing method of the same Jan. 28, 2014
8637905 Semiconductor device and fabrication method thereof Jan. 28, 2014
8633519 Group III nitride semiconductor device, production method therefor, power converter Jan. 21, 2014
8633518 Gallium nitride power devices Jan. 21, 2014
8633494 Semiconductor device and method for manufacturing semiconductor device Jan. 21, 2014
8633094 GaN high voltage HFET with passivation plus gate dielectric multilayer structure Jan. 21, 2014
8629454 Semiconductor device Jan. 14, 2014
8629479 Semiconductor device Jan. 14, 2014
8614460 Semiconductor device and fabrication method of the semiconductor device Dec. 24, 2013
8614461 Compound semiconductor device Dec. 24, 2013
8598628 Semiconductor device Dec. 3, 2013
8592869 Nitride-based heterojunction semiconductor device and method for the same Nov. 26, 2013
8592868 Normally-off semiconductor devices Nov. 26, 2013
8592867 Wide bandgap HEMTS with source connected field plates Nov. 26, 2013
8586994 Semiconductor device Nov. 19, 2013
8587032 Transistor with high electron mobility and inhomogeneous layer resistance of the guide channel Nov. 19, 2013
8581367 Semiconductor device having electrode film in which film thickness of periphery is thinner than film thickness of center Nov. 12, 2013
8581301 Nitride semiconductor device Nov. 12, 2013
8581261 Compound semiconductor device and method of manufacturing the same Nov. 12, 2013
8569769 E-mode high electron mobility transistors and methods of manufacturing the same Oct. 29, 2013
8569797 Field effect transistor and method of manufacturing the same Oct. 29, 2013
8569842 Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices Oct. 29, 2013
8564020 Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same Oct. 22, 2013
RE44538 Indium gallium nitride channel high electron mobility transistors, and method of making the same Oct. 15, 2013
8558285 Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials Oct. 15, 2013
8558281 Gate metallization methods for self-aligned sidewall gate GaN HEMT Oct. 15, 2013
8552471 Semiconductor apparatus having reverse blocking characteristics and method of manufacturing the same Oct. 8, 2013
8546207 Method for fabricating semiconductor wafers for the integration of silicon components with HEMTs, and appropriate semiconductor layer arrangement Oct. 1, 2013
8546848 Nitride semiconductor device Oct. 1, 2013
8546852 Semiconductor device Oct. 1, 2013
8541817 Multilayer barrier III-nitride transistor for high voltage electronics Sep. 24, 2013
8536622 Semiconductor device and power supply apparatus Sep. 17, 2013
8530996 Buck regulator structure comprising high-side and low-side voltage HEMT transistors Sep. 10, 2013

1 2 3 4 5 6 7










 
 
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