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Class Information
Number: 257/E29.245
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With one-dimensional charge carrier gas channel (e.g., quantum wire fet) (epo)
Description: This subclass is indented under subclass E29.242. This subclass is substantially the same in scope as ECLA classification H01L29/775.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8686485 Semiconductor devices and methods of manufacturing the same Apr. 1, 2014
8648324 Glassy carbon nanostructures Feb. 11, 2014
8642997 Transistor device with reduced gate resistance Feb. 4, 2014
8637849 Vertical nanowire FET devices Jan. 28, 2014
8624318 Semiconductor switching circuit employing quantum dot structures Jan. 7, 2014
8604462 Photodetector Dec. 10, 2013
8586966 Contacts for nanowire field effect transistors Nov. 19, 2013
8575653 Non-planar quantum well device having interfacial layer and method of forming same Nov. 5, 2013
8564031 High voltage-resistant lateral double-diffused transistor based on nanowire device Oct. 22, 2013
8558218 Methods of forming carbon nanotubes architectures and composites with high electrical and thermal conductivites and structures formed thereby Oct. 15, 2013
8519479 Generation of multiple diameter nanowire field effect transistors Aug. 27, 2013
8445967 Semiconductor switching device employing a quantum dot structure May. 21, 2013
8445892 p-FET with a strained nanowire channel and embedded SiGe source and drain stressors May. 21, 2013
8445889 Method of patterning of nanostructures May. 21, 2013
8445337 Generation of multiple diameter nanowire field effect transistors May. 21, 2013
8440997 Nanowire photodetector and image sensor with internal gain May. 14, 2013
8436398 Back diffusion suppression structures May. 7, 2013
8420455 Generation of multiple diameter nanowire field effect transistors Apr. 16, 2013
8384069 Semiconductor structure having blocks connected by nanowires Feb. 26, 2013
8350249 Coalesced nanowire structures with interstitial voids and method for manufacturing the same Jan. 8, 2013
8344352 Using unstable nitrides to form semiconductor structures Jan. 1, 2013
8344357 3-terminal electronic device and 2-terminal electronic device including an active layer including nanosheets Jan. 1, 2013
8331135 Signal control elements in ferromagnetic logic Dec. 11, 2012
8319259 Semiconductor power switch having nanowires Nov. 27, 2012
8298881 Nanowire FET with trapezoid gate structure Oct. 30, 2012
8258499 Core-shell-shell nanowire transistor Sep. 4, 2012
8252636 Method of manufacturing nanowires parallel to the supporting substrate Aug. 28, 2012
8247797 Field-effect transistor and sensor based on the same Aug. 21, 2012
8242485 Source/drain technology for the carbon nano-tube/graphene CMOS with a single self-aligned metal silicide process Aug. 14, 2012
8242542 Semiconductor switching device employing a quantum dot structure Aug. 14, 2012
8212237 Nanostructured memory device Jul. 3, 2012
8193524 Nanoelectronic device Jun. 5, 2012
8183104 Method for dual-channel nanowire FET device May. 22, 2012
8178862 Junctionless metal-oxide-semiconductor transistor May. 15, 2012
8158968 Methods of forming carbon nanotubes architectures and composites with high electrical and thermal conductivities and structures formed thereby Apr. 17, 2012
8106382 Field effect transistor Jan. 31, 2012
8049203 Nanoelectronic structure and method of producing such Nov. 1, 2011
8022393 Lithographic process using a nanowire mask, and nanoscale devices fabricated using the process Sep. 20, 2011
7999251 Nanowire MOSFET with doped epitaxial contacts for source and drain Aug. 16, 2011
7982204 Using unstable nitrides to form semiconductor structures Jul. 19, 2011
7960251 Method for producing nanowires using a porous template Jun. 14, 2011
7956348 Complementary logic circuit Jun. 7, 2011
7928017 Method of forming nanowire and method of manufacturing semiconductor device comprising the nanowire Apr. 19, 2011
7923310 Core-shell-shell nanowire transistor and fabrication method Apr. 12, 2011
7880318 Sensing system and method of making the same Feb. 1, 2011
7829880 Quantum dot semiconductor device Nov. 9, 2010
7808056 Semiconductor integrated circuit device Oct. 5, 2010
7763978 Three-dimensional crossbar array systems and methods for writing information to and reading information stored in three-dimensional crossbar array junctions Jul. 27, 2010
7737429 Nitride based semiconductor device using nanorods and process for preparing the same Jun. 15, 2010
7638397 Method of forming quantum wire gate device Dec. 29, 2009

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