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Class Information
Number: 257/E29.244
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > Velocity modulations transistor (i.e., vmt) (epo)
Description: This subclass is indented under subclass E29.242. This subclass is substantially the same in scope as ECLA classification H01L29/772D.










Patents under this class:

Patent Number Title Of Patent Date Issued
8106434 Semiconductor device with a superparaelectric gate insulator Jan. 31, 2012
5959317 High frequency hetero junction type field effect transistor using multilayer electron feed layer Sep. 28, 1999
5404032 Field-effect semiconductor device Apr. 4, 1995
5374831 Quantum well phonon modulator Dec. 20, 1994
5258632 Velocity modulation transistor Nov. 2, 1993
5225895 Velocity-modulation transistor with quantum well wire layer Jul. 6, 1993
5196359 Method of forming heterostructure field effect transistor Mar. 23, 1993
5091759 Heterostructure field effect transistor Feb. 25, 1992
4806998 Heterojunction and dual channel semiconductor field effect transistor or negative transconductive device Feb. 21, 1989
4745452 Tunneling transfer devices May. 17, 1988
4688061 Mobility-modulation field-effect transistor Aug. 18, 1987











 
 
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