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Class Information
Number: 257/E29.238
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Charge transfer device (epo) > Charge-coupled device (epo) > With field effect produced by insulated gate (epo) > Surface channel ccd (epo) > Two-phase ccd (epo)
Description: This subclass is indented under subclass E29.237. This subclass is substantially the same in scope as ECLA classification H01L29/768F2.










Patents under this class:
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Patent Number Title Of Patent Date Issued
7715248 Phase-change TaN resistor based triple-state/multi-state read only memory May. 11, 2010
7605411 Charge transfer device and imaging apparatus Oct. 20, 2009
7381981 Phase-change TaN resistor based triple-state/multi-state read only memory Jun. 3, 2008
5556801 Method of making a planar charge coupled device with edge aligned implants and interconnected electrodes Sep. 17, 1996
5369293 Charge-coupled device having reduced cross-talk Nov. 29, 1994
5220185 CCD shift register Jun. 15, 1993
4881250 Compact charge-coupled device having a conductive shielding layer Nov. 14, 1989
4873561 High dynamic range charge-coupled device Oct. 10, 1989
4649407 Charge coupled device for transferring electric charge Mar. 10, 1987
4403237 Charge transfer device having a bent charge transfer channel Sep. 6, 1983
4393357 High speed transient recorder systems Jul. 12, 1983
4381516 Charge-coupled device having a channel and an electrode for changing a transfer direction of charge signals Apr. 26, 1983
4377755 Signal compressor apparatus Mar. 22, 1983
4371885 Charge coupled device improved meander channel serial register Feb. 1, 1983
4364164 Method of making a sloped insulator charge-coupled device Dec. 21, 1982
4365261 Co-planar barrier-type charge coupled device with enhanced storage capacity and decreased leakage current Dec. 21, 1982
4347656 Method of fabricating polysilicon electrodes Sep. 7, 1982
4290187 Method of making charge-coupled arrangement in the two-phase technique Sep. 22, 1981
4259597 Charge transfer signal processing apparatus Mar. 31, 1981
4259598 Charge transfer signal processing apparatus transversal filter Mar. 31, 1981
4245199 Semiconductor CCD transversal filter with controllable threshold level Jan. 13, 1981
4242692 Charge transfer device which has a pair of straight portions joined by a direction changing portion Dec. 30, 1980
4237389 Charge coupled device channel crossover circuit Dec. 2, 1980
4215357 Charge transfer device stored with fixed information Jul. 29, 1980
4195273 CTD charge subtraction transversal filter Mar. 25, 1980
4179793 Method of making a charge transfer device Dec. 25, 1979
4156247 Two-phase continuous poly silicon gate CCD May. 22, 1979
4144588 CCD Storage module Mar. 13, 1979
4141024 Solid state image sensing device Feb. 20, 1979
4126794 Semiconductor charge coupled device with split electrode configuration Nov. 21, 1978
4104543 Multichannel CCD signal subtraction system Aug. 1, 1978
4099317 Method for fabricating self-aligned CCD devices and their output self-aligned MOS transistors on a single semiconductor substrate Jul. 11, 1978
4097885 Compact, two-phase charge-coupled-device structure utilizing multiple layers of conductive material Jun. 27, 1978
4089023 Two-phase charge-coupled semiconductor arrangement May. 9, 1978
4087832 Two-phase charge coupled device structure May. 2, 1978
4072977 Read only memory utilizing charge coupled device structures Feb. 7, 1978
4047051 Method and apparatus for replicating a charge packet Sep. 6, 1977
4035906 Silicon gate CCD structure Jul. 19, 1977
4035821 Device for introducing charge Jul. 12, 1977
4035665 Charge-coupled device comprising semiconductors having different forbidden band widths Jul. 12, 1977
4027381 Silicon gate ccd structure Jun. 7, 1977
4027382 Silicon gate CCD structure Jun. 7, 1977
4001861 Double-layer, polysilicon, two-phase, charge coupled device Jan. 4, 1977
3987312 Device for the selective storage of charges and for selective charge shift in both directions with a charge-coupled charge shift arrangement Oct. 19, 1976
3986198 Introducing signal at low noise level to charge-coupled circuit Oct. 12, 1976
3967365 Process for the production of a two-phase charge shift assembly Jul. 6, 1976
3961352 Multi-ripple charge coupled device Jun. 1, 1976
3947863 Charge coupled device with electrically settable shift direction Mar. 30, 1976
3944850 Charge transfer delay line filters Mar. 16, 1976
3936861 Charge-coupled device and method of fabrication of the device Feb. 3, 1976

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