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Class Information
Number: 257/E29.235
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Charge transfer device (epo) > Charge-coupled device (epo) > With field effect produced by insulated gate (epo) > Buried channel ccd (epo) > Three-phase ccd (epo)
Description: This subclass is indented under subclass E29.233. This subclass is substantially the same in scope as ECLA classification H01L29/768E3.

Patents under this class:

Patent Number Title Of Patent Date Issued
7715248 Phase-change TaN resistor based triple-state/multi-state read only memory May. 11, 2010
7605411 Charge transfer device and imaging apparatus Oct. 20, 2009
7381981 Phase-change TaN resistor based triple-state/multi-state read only memory Jun. 3, 2008
6586784 Accumulation mode clocking of a charge-coupled device Jul. 1, 2003
5990503 Selectable resolution CCD sensor Nov. 23, 1999
5331165 Split event reduced x-ray imager Jul. 19, 1994
5134453 Bulk transport charge-coupled device with linear input characteristic Jul. 28, 1992
4262297 Semiconductor charge transfer device with multi-level polysilicon electrode and bus-line structure Apr. 14, 1981
4210922 Charge coupled imaging device having selective wavelength sensitivity Jul. 1, 1980
4206371 CCD with differently doped substrate regions beneath a common electrode Jun. 3, 1980
4148016 Digital to analog and analog to digital converters using CCD ramp generator Apr. 3, 1979
4063992 Edge etch method for producing narrow openings to the surface of materials Dec. 20, 1977
4032952 Bulk charge transfer semiconductor device Jun. 28, 1977
3946420 Two level electrode configuration for three phase charge coupled device Mar. 23, 1976

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