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Class Information
Number: 257/E29.234
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Charge transfer device (epo) > Charge-coupled device (epo) > With field effect produced by insulated gate (epo) > Buried channel ccd (epo) > Two-phase ccd (epo)
Description: This subclass is indented under subclass E29.233. This subclass is substantially the same in scope as ECLA classification H01L29/768E2.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8564077 Package for electronic component, manufacturing method thereof and sensing apparatus Oct. 22, 2013
8497216 Micromechanical component Jul. 30, 2013
8278707 Field effect transistors having a double gate structure Oct. 2, 2012
8217474 Hermetic MEMS device and method for fabricating hermetic MEMS device and package structure of MEMS device Jul. 10, 2012
8174083 Dual-suspension system for MEMS-based devices May. 8, 2012
8138006 Method for producing a micromechanical component having a trench structure for backside contact Mar. 20, 2012
8106470 Triple-axis MEMS accelerometer having a bottom capacitor Jan. 31, 2012
7989795 Phase change memory device and method for fabricating the same Aug. 2, 2011
7884347 Phase-change memory device and method of fabricating the same Feb. 8, 2011
7816710 Packaging for an interferometric modulator with a curved back plate Oct. 19, 2010
7767483 Dual-suspension system for MEMS-based devices and method for fabricating same Aug. 3, 2010
7715248 Phase-change TaN resistor based triple-state/multi-state read only memory May. 11, 2010
7605411 Charge transfer device and imaging apparatus Oct. 20, 2009
7381981 Phase-change TaN resistor based triple-state/multi-state read only memory Jun. 3, 2008
6380005 Charge transfer device and method for manufacturing the same Apr. 30, 2002
6218686 Charge coupled devices Apr. 17, 2001
6207981 Charge-coupled device with potential barrier and charge storage regions Mar. 27, 2001
6097044 Charge transfer device and method for manufacturing the same Aug. 1, 2000
6011282 Charge coupled device with a buried channel two-phase driven two-layer electrode structure Jan. 4, 2000
5986295 Charge coupled device Nov. 16, 1999
5943556 Method for manufacturing an electric charge transfer device Aug. 24, 1999
5914506 Charge coupled device having two-layer electrodes and method of manufacturing the same Jun. 22, 1999
5869853 Linear charge-coupled device having improved charge transferring characteristics Feb. 9, 1999
5773324 Bidirectional horizontal charge transfer device and method Jun. 30, 1998
5521405 Charge transfer device with two-phase two-layered electrode structure and method for fabricating the same May. 28, 1996
5438211 Charge-transfer device having an improved charge-sensing section Aug. 1, 1995
5406101 Horizontal charge coupled device Apr. 11, 1995
5385860 Charge transfer device Jan. 31, 1995
5298448 Method of making two-phase buried channel planar gate CCD Mar. 29, 1994
5286987 Charge transfer device Feb. 15, 1994
5240873 Method of making charge transfer device Aug. 31, 1993
5241199 Charge coupled device (CCD) having high transfer efficiency at low temperature operation Aug. 31, 1993
5210433 Solid-state CCD imaging device with transfer gap voltage controller May. 11, 1993
5175602 Pseudo bi-phase charge coupled device having narrow channel effect Dec. 29, 1992
5114833 Charge-coupled device and process of making the device May. 19, 1992
5091922 Charge transfer device type solid state image sensor having constant saturation level Feb. 25, 1992
5065203 Trench structured charge-coupled device Nov. 12, 1991
5024963 Method of fabricating a BCCD channel with stair-case doping by self-alignment Jun. 18, 1991
5019884 Charge transfer device May. 28, 1991
4992842 Charge-coupled device channel with countinously graded built-in potential Feb. 12, 1991
4910569 Charge-coupled device having improved transfer efficiency Mar. 20, 1990
4908518 Interline transfer CCD image sensing device with electrode structure for each pixel Mar. 13, 1990
4901125 Charge coupled device capable of efficiently transferring charge Feb. 13, 1990
4873562 Charge-coupled device with lowering of transfer potential at output and fabrication method thereof Oct. 10, 1989
4814844 Split two-phase CCD clocking gate apparatus Mar. 21, 1989
4746622 Process for preparing a charge coupled device with charge transfer direction biasing implants May. 24, 1988
4742016 Method of manufacture of a two-phase CCD May. 3, 1988
4649408 Charge storage type semiconductor device and method for producing same Mar. 10, 1987
4590509 MIS high-voltage element with high-resistivity gate and field-plate May. 20, 1986
4590506 Charge-coupled buried-channel device with high-resistivity gate electrodes May. 20, 1986

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