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Class Information
Number: 257/E29.233
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Charge transfer device (epo) > Charge-coupled device (epo) > With field effect produced by insulated gate (epo) > Buried channel ccd (epo)
Description: This subclass is indented under subclass E29.229. This subclass is substantially the same in scope as ECLA classification H01L29/768E.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.236 Four-phase ccd (epo) 21
257/E29.235 Three-phase ccd (epo) 14
257/E29.234 Two-phase ccd (epo) 63


Patents under this class:
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Patent Number Title Of Patent Date Issued
7544552 Method for manufacturing junction semiconductor device Jun. 9, 2009
7271447 Semiconductor device Sep. 18, 2007
7141838 Buried word line memory integrated circuit system Nov. 28, 2006
6482667 Solid state image sensor device and method of fabricating the same Nov. 19, 2002
6432738 Single-layer-electrode type two-phase charge coupled device having smooth charge transfer Aug. 13, 2002
6252265 Single-layer-electrode type two-phase charge coupled device having smooth charge transfer Jun. 26, 2001
6242768 Charge coupled device and a driving method thereof Jun. 5, 2001
6236074 Solid state image sensor device and method of fabricating the same May. 22, 2001
6194242 Fabrication of solid-state imaging device having no transfer error of the signal charge from vertical horizontal charge-transfer section Feb. 27, 2001
6114717 Solid-state imaging device having no transfer error of the signal charges from vertical horizontal charge-transfer section Sep. 5, 2000
6107124 Charge coupled device and method of fabricating the same Aug. 22, 2000
6104072 Analogue MISFET with threshold voltage adjuster Aug. 15, 2000
6100552 Multi-tapped bi-directional CCD readout register Aug. 8, 2000
6018170 Single-layer-electrode type two-phase charge coupled device having smooth charge transfer Jan. 25, 2000
5917208 Charge coupled device and electrode structure Jun. 29, 1999
5892251 Apparatus for transferring electric charges Apr. 6, 1999
5837563 Self aligned barrier process for small pixel virtual phase charged coupled devices Nov. 17, 1998
5770870 Solid-state imaging device having an unwanted charge drain section disposed adjacent to horizonal charge transfer section Jun. 23, 1998
5578842 Charge coupled device image sensor Nov. 26, 1996
5477069 Charge transfer device and driving method for the same Dec. 19, 1995
5420812 Bidirectional type CCD May. 30, 1995
5402459 Frame transfer image sensor with electronic shutter Mar. 28, 1995
5315137 Charge transfer device, process for its manufacture, and method of driving the device May. 24, 1994
5306932 Charge transfer device provided with improved output structure Apr. 26, 1994
5302544 Method of making CCD having a single level electrode of single crystalline silicon Apr. 12, 1994
5292680 Method of forming a convex charge coupled device Mar. 8, 1994
5229630 Charge transfer and/or amplifying device of low noise to detect signal charges at a high conversion efficiency Jul. 20, 1993
5227650 Charge coupled device delay line employing a floating gate or floating diffusion gate at its intermediate output portion Jul. 13, 1993
5221852 Charge coupled device and method of producing the same Jun. 22, 1993
5070380 Transfer gate for photodiode to CCD image sensor Dec. 3, 1991
5024963 Method of fabricating a BCCD channel with stair-case doping by self-alignment Jun. 18, 1991
4994875 Virtual phase charge transfer device Feb. 19, 1991
4906584 Fast channel single phase buried channel CCD Mar. 6, 1990
4812887 Charge-coupled device Mar. 14, 1989
4807005 Semiconductor device Feb. 21, 1989
4742016 Method of manufacture of a two-phase CCD May. 3, 1988
4725872 Fast channel single phase buried channel CCD Feb. 16, 1988
4667213 Charge-coupled device channel structure May. 19, 1987
4665420 Edge passivated charge-coupled device image sensor May. 12, 1987
4594604 Charge coupled device with structures for forward scuppering to reduce noise Jun. 10, 1986
4586010 Charge splitting sampler systems Apr. 29, 1986
4546368 Charge transfer device having a precisely controlled injection rate Oct. 8, 1985
4412343 Charge transfer circuits with dark current compensation Oct. 25, 1983
4277792 Piggyback readout stratified channel CCD Jul. 7, 1981
4271419 Serial readout stratified channel CCD Jun. 2, 1981
4229752 Virtual phase charge transfer device Oct. 21, 1980
4228445 Dual plane well-type two-phase ccd Oct. 14, 1980
4227202 Dual plane barrier-type two-phase CCD Oct. 7, 1980
4208668 Charge coupled device with buried zones in a semiconductor substrate for use especially as a light sensor Jun. 17, 1980
4207477 Bulk channel CCD with switchable draining of minority charge carriers Jun. 10, 1980

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