 |
|
 |
| |
 |
|
Class Information
Number: 257/E29.233
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Charge transfer device (epo) > Charge-coupled device (epo) > With field effect produced by insulated gate (epo) > Buried channel ccd (epo)
Description: This subclass is indented under subclass E29.229. This subclass is substantially the same in scope as ECLA classification H01L29/768E.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7544552 |
Method for manufacturing junction semiconductor device |
Jun. 9, 2009 |
| 7271447 |
Semiconductor device |
Sep. 18, 2007 |
| 7141838 |
Buried word line memory integrated circuit system |
Nov. 28, 2006 |
| 6482667 |
Solid state image sensor device and method of fabricating the same |
Nov. 19, 2002 |
| 6432738 |
Single-layer-electrode type two-phase charge coupled device having smooth charge transfer |
Aug. 13, 2002 |
| 6252265 |
Single-layer-electrode type two-phase charge coupled device having smooth charge transfer |
Jun. 26, 2001 |
| 6242768 |
Charge coupled device and a driving method thereof |
Jun. 5, 2001 |
| 6236074 |
Solid state image sensor device and method of fabricating the same |
May. 22, 2001 |
| 6194242 |
Fabrication of solid-state imaging device having no transfer error of the signal charge from vertical horizontal charge-transfer section |
Feb. 27, 2001 |
| 6114717 |
Solid-state imaging device having no transfer error of the signal charges from vertical horizontal charge-transfer section |
Sep. 5, 2000 |
| 6107124 |
Charge coupled device and method of fabricating the same |
Aug. 22, 2000 |
| 6104072 |
Analogue MISFET with threshold voltage adjuster |
Aug. 15, 2000 |
| 6100552 |
Multi-tapped bi-directional CCD readout register |
Aug. 8, 2000 |
| 6018170 |
Single-layer-electrode type two-phase charge coupled device having smooth charge transfer |
Jan. 25, 2000 |
| 5917208 |
Charge coupled device and electrode structure |
Jun. 29, 1999 |
| 5892251 |
Apparatus for transferring electric charges |
Apr. 6, 1999 |
| 5837563 |
Self aligned barrier process for small pixel virtual phase charged coupled devices |
Nov. 17, 1998 |
| 5770870 |
Solid-state imaging device having an unwanted charge drain section disposed adjacent to horizonal charge transfer section |
Jun. 23, 1998 |
| 5578842 |
Charge coupled device image sensor |
Nov. 26, 1996 |
| 5477069 |
Charge transfer device and driving method for the same |
Dec. 19, 1995 |
| 5420812 |
Bidirectional type CCD |
May. 30, 1995 |
| 5402459 |
Frame transfer image sensor with electronic shutter |
Mar. 28, 1995 |
| 5315137 |
Charge transfer device, process for its manufacture, and method of driving the device |
May. 24, 1994 |
| 5306932 |
Charge transfer device provided with improved output structure |
Apr. 26, 1994 |
| 5302544 |
Method of making CCD having a single level electrode of single crystalline silicon |
Apr. 12, 1994 |
| 5292680 |
Method of forming a convex charge coupled device |
Mar. 8, 1994 |
| 5229630 |
Charge transfer and/or amplifying device of low noise to detect signal charges at a high conversion efficiency |
Jul. 20, 1993 |
| 5227650 |
Charge coupled device delay line employing a floating gate or floating diffusion gate at its intermediate output portion |
Jul. 13, 1993 |
| 5221852 |
Charge coupled device and method of producing the same |
Jun. 22, 1993 |
| 5070380 |
Transfer gate for photodiode to CCD image sensor |
Dec. 3, 1991 |
| 5024963 |
Method of fabricating a BCCD channel with stair-case doping by self-alignment |
Jun. 18, 1991 |
| 4994875 |
Virtual phase charge transfer device |
Feb. 19, 1991 |
| 4906584 |
Fast channel single phase buried channel CCD |
Mar. 6, 1990 |
| 4812887 |
Charge-coupled device |
Mar. 14, 1989 |
| 4807005 |
Semiconductor device |
Feb. 21, 1989 |
| 4742016 |
Method of manufacture of a two-phase CCD |
May. 3, 1988 |
| 4725872 |
Fast channel single phase buried channel CCD |
Feb. 16, 1988 |
| 4667213 |
Charge-coupled device channel structure |
May. 19, 1987 |
| 4665420 |
Edge passivated charge-coupled device image sensor |
May. 12, 1987 |
| 4594604 |
Charge coupled device with structures for forward scuppering to reduce noise |
Jun. 10, 1986 |
| 4586010 |
Charge splitting sampler systems |
Apr. 29, 1986 |
| 4546368 |
Charge transfer device having a precisely controlled injection rate |
Oct. 8, 1985 |
| 4412343 |
Charge transfer circuits with dark current compensation |
Oct. 25, 1983 |
| 4277792 |
Piggyback readout stratified channel CCD |
Jul. 7, 1981 |
| 4271419 |
Serial readout stratified channel CCD |
Jun. 2, 1981 |
| 4229752 |
Virtual phase charge transfer device |
Oct. 21, 1980 |
| 4228445 |
Dual plane well-type two-phase ccd |
Oct. 14, 1980 |
| 4227202 |
Dual plane barrier-type two-phase CCD |
Oct. 7, 1980 |
| 4208668 |
Charge coupled device with buried zones in a semiconductor substrate for use especially as a light sensor |
Jun. 17, 1980 |
| 4207477 |
Bulk channel CCD with switchable draining of minority charge carriers |
Jun. 10, 1980 |
|
|
|
 |
|
 |
|
| |
Randomly Featured Patents |
|
