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Class Information
Number: 257/E29.229
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Charge transfer device (epo) > Charge-coupled device (epo) > With field effect produced by insulated gate (epo)
Description: This subclass is indented under subclass E29.228. This subclass is substantially the same in scope as ECLA classification H01L29/768.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.233 Buried channel ccd (epo) 65
257/E29.23 Input structure (epo) 95
257/E29.231 Output structure (epo) 141
257/E29.232 Structure for improving output signal (epo) 23
257/E29.237 Surface channel ccd (epo) 51

Patents under this class:

Patent Number Title Of Patent Date Issued
8188459 Devices based on SI/nitride structures May. 29, 2012
7939866 Field effect transistor May. 10, 2011
7772618 Semiconductor storage device comprising MIS transistor including charge storage layer Aug. 10, 2010
7714359 Field effect transistor having nitride semiconductor layer May. 11, 2010
7588977 Method of fabricating a MOS field effect transistor having plurality of channels Sep. 15, 2009
7473944 Solid-state imaging device Jan. 6, 2009
7358577 High voltage field effect transistor Apr. 15, 2008
6441409 Dual-line type charge transfer device Aug. 27, 2002
6312970 Fabrication of CCD type solid state image pickup device having double-structured charge transfer electrodes Nov. 6, 2001
6194749 CCD type solid state image pickup device having double-structured charge transfer electrodes Feb. 27, 2001
6188092 Solid imaging device having an antifuse element and method of making the same Feb. 13, 2001
6165908 Single-layer-electrode type charge coupled device having double conductive layers for charge transfer electrodes Dec. 26, 2000
6133596 Near complete charge transfer device Oct. 17, 2000
5347140 Resonant electron transfer device Sep. 13, 1994
5345099 Semiconductor device Sep. 6, 1994
5325106 Analog driver for scrollable spatial light modulator Jun. 28, 1994
5309005 Charge transfer device having a bent transfer channel May. 3, 1994
5289017 Solid state imaging device having silicon carbide crystal layer Feb. 22, 1994
5055900 Trench-defined charge-coupled device Oct. 8, 1991
4967249 Gain compression photodetector array Oct. 30, 1990
4903098 Charge-coupled device Feb. 20, 1990
4888633 Charge transfer device having a buried transfer channel with higher and lower concentrations Dec. 19, 1989
4878102 Charge-coupled device Oct. 31, 1989
4821081 Large pitch CCD with high charge transfer efficiency Apr. 11, 1989
4760273 Solid-state image sensor with groove-situated transfer elements Jul. 26, 1988
4749659 Method of manufacturing an infrared-sensitive charge coupled device Jun. 7, 1988
4716580 Charge transfer analog comparator and devices using such a comparator Dec. 29, 1987
4639678 Absolute charge difference detection method and structure for a charge coupled device Jan. 27, 1987
4589005 Charge transfer device having improved electrodes May. 13, 1986
4574295 Charge coupled device having meandering channels Mar. 4, 1986
4562452 Charge coupled device having meandering channels Dec. 31, 1985
4402014 Circuit arrangement for discharging a capacity Aug. 30, 1983
4389615 CCD Demodulator circuit Jun. 21, 1983
4374334 Signal comparator apparatus Feb. 15, 1983
4301191 Method of providing a conductor layer pattern having parts which are present at a small separation in the manufacture of semiconductor devices Nov. 17, 1981
4284907 Charge transfer filter Aug. 18, 1981
4245199 Semiconductor CCD transversal filter with controllable threshold level Jan. 13, 1981
4156858 Charge transfer transversal filter May. 29, 1979
4070667 Charge transfer analog-to-digital converter Jan. 24, 1978
4017883 Single-electrode charge-coupled random access memory cell with impurity implanted gate region Apr. 12, 1977
4014036 Single-electrode charge-coupled random access memory cell Mar. 22, 1977
3989956 Charge transfer binary counter Nov. 2, 1976
3953745 Charge transfer device signal processing system Apr. 27, 1976
3950188 Method of patterning polysilicon Apr. 13, 1976

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