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Class Information
Number: 257/E29.228
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Charge transfer device (epo) > Charge-coupled device (epo)
Description: This subclass is indented under subclass E29.227. This subclass is substantially the same in scope as ECLA classification H01L29/765.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.229 With field effect produced by insulated gate (epo) 44


Patents under this class:

Patent Number Title Of Patent Date Issued
8247847 Solid-state imaging device and manufacturing method therefor Aug. 21, 2012
7605411 Charge transfer device and imaging apparatus Oct. 20, 2009
7557390 Solid image capturing element for power saving at output section and manufacturing method for the same Jul. 7, 2009
7416908 Method for fabricating a micro structure Aug. 26, 2008
5981986 Semiconductor device having a heterojunction Nov. 9, 1999
5567641 Method of making a bipolar gate charge coupled device with clocked virtual phase Oct. 22, 1996
5502318 Bipolar gate charge coupled device with clocked virtual phase Mar. 26, 1996
5455432 Diamond semiconductor device with carbide interlayer Oct. 3, 1995
5386128 Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output Jan. 31, 1995
5309004 Heterostructure acoustic charge transport device having electron and hole transport May. 3, 1994
5264717 HACT structure with reduced surface state effects Nov. 23, 1993
5262659 Nyquist frequency bandwidth hact memory Nov. 16, 1993
5144580 Quantum wire CCD charge pump Sep. 1, 1992
5128734 Surface channel hact Jul. 7, 1992
5105248 Spatial light modulator using charge coupled device with quantum wells Apr. 14, 1992
RE33584 High electron mobility single heterojunction semiconductor devices May. 7, 1991
4814843 Charge transfer device with pn junction gates Mar. 21, 1989
4779124 Virtual phase buried channel CCD Oct. 18, 1988
4749659 Method of manufacturing an infrared-sensitive charge coupled device Jun. 7, 1988
4692993 Schottky barrier charge coupled device (CCD) manufacture Sep. 15, 1987
4683484 Lateral confinement of charge carriers in a multiple quantum well structure Jul. 28, 1987
4612521 Charge-coupled transversal filter Sep. 16, 1986
4550331 Multilayer modulation doped heterostructure charge coupled device Oct. 29, 1985
4424525 High electron mobility single heterojunction semiconductor devices Jan. 3, 1984
4300151 Change transfer device with PN Junction gates Nov. 10, 1981
4285000 Buried channel charge coupled device with semi-insulating substrate Aug. 18, 1981
4264915 Charge-coupled component formed on gallium arsenide Apr. 28, 1981
4231810 Process for producing bi-polar charge coupled devices by ion-implantation Nov. 4, 1980
4208668 Charge coupled device with buried zones in a semiconductor substrate for use especially as a light sensor Jun. 17, 1980











 
 
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