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Class Information
Number: 257/E29.224
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Thyristor-type device (e.g., having four-zone regenerative action) (epo) > Asymmetrical thyristor (epo)
Description: This subclass is indented under subclass E29.211. This subclass is substantially the same in scope as ECLA classification H01L29/74E.










Patents under this class:

Patent Number Title Of Patent Date Issued
8703547 Thyristor comprising a special doped region characterized by an LDD region and a halo implant Apr. 22, 2014
8598621 Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access tra Dec. 3, 2013
8390124 Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings Mar. 5, 2013
6727526 Thyristor with recovery time voltage surge resistance Apr. 27, 2004
6271545 Asymmetrical thyristor with blocking/sweep voltage independent of temperature behavior Aug. 7, 2001
5644149 Anode-side short structure for asymmetric thyristors Jul. 1, 1997
4775883 Asymmetrical thyristor and method for producing same Oct. 4, 1988
4642669 Semiconductor device having a blocking capability in only one direction Feb. 10, 1987
4517582 Asymmetrical thyristor with highly doped anode base layer region for optimized blocking and forward voltages May. 14, 1985
4502070 FET Controlled thyristor Feb. 26, 1985
4286279 Multilayer semiconductor switching devices Aug. 25, 1981
4275408 Thyristor Jun. 23, 1981
4243999 Gate turn-off thyristor Jan. 6, 1981
4236169 Thyristor device Nov. 25, 1980
4177479 Electrical circuit with a high-frequency thyristor fired by blocking leakage current Dec. 4, 1979
4081821 Bistable semiconductor component for high frequencies having four zones of alternating opposed types of conductivity Mar. 28, 1978











 
 
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