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Class Information
Number: 257/E29.223
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Bipolar device (epo) > Thyristor-type device (e.g., having four-zone regenerative action) (epo) > Having amplifying gate structure (e.g., darlington configuration) (epo)
Description: This subclass is indented under subclass E29.211. This subclass is substantially the same in scope as ECLA classification H01L29/74D.

Patents under this class:
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Patent Number Title Of Patent Date Issued
6723586 Thyristor provided with integrated circuit-commutated recovery time protection and production method therefor Apr. 20, 2004
6326648 Power switch with a controlled DI/DT Dec. 4, 2001
6066864 Thyristor with integrated dU/dt protection May. 23, 2000
6043516 Semiconductor component with scattering centers within a lateral resistor region Mar. 28, 2000
5998812 Amplifying-gate thyristor with an increased hold current Dec. 7, 1999
5861639 Breakover-triggered dipole component having a controlled sensitivity Jan. 19, 1999
5739555 Amplifying-gate thyristor with an increased hold current Apr. 14, 1998
5637886 Thyristor with improved dv/dt resistance Jun. 10, 1997
5627387 Overvoltage self-protection semiconductor device, method of fabrication thereof and semiconductor circuit using the same May. 6, 1997
5587595 Lateral field-effect-controlled semiconductor device on insulating substrate Dec. 24, 1996
5365086 Thyristors having a common cathode Nov. 15, 1994
5345094 Light triggered triac device and method of driving the same Sep. 6, 1994
5204273 Method for the manufacturing of a thyristor with defined lateral resistor Apr. 20, 1993
5028974 Semiconductor switching device with anode shortening structure Jul. 2, 1991
4994884 Gate-controlled bi-directional semiconductor switching device Feb. 19, 1991
4956690 Zero crossing type thyristor Sep. 11, 1990
4949147 Sensitive thyristor with integrated gate-cathode decoupling Aug. 14, 1990
4942443 Thyristor with auxiliary emitter electrode and short-circuit regions and method Jul. 17, 1990
4931848 Thyristor having increased dI/dt stability Jun. 5, 1990
4914496 Gate turn-off thyristor with independent turn-on/off controlling transistors Apr. 3, 1990
4908687 Controlled turn-on thyristor Mar. 13, 1990
4825270 Gate turn-off thyristor Apr. 25, 1989
4760431 Gate turn-off thyristor with independent turn-on/off controlling transistors Jul. 26, 1988
4755862 Integrated triac structure with diac control Jul. 5, 1988
4739387 Amplifying gate thyristor having high gate sensitivity and high dv/dt rating Apr. 19, 1988
4737834 Thyristor with controllable emitter short-circuit paths inserted in the emitter Apr. 12, 1988
4682199 High voltage thyristor with optimized doping, thickness, and sheet resistivity for cathode base layer Jul. 21, 1987
4649410 Radiation controllable thyristor with multiple non-concentric amplified stages Mar. 10, 1987
4646121 Thyristor with a self-protection function for breakover turn-on failure Feb. 24, 1987
4614962 Controlled electronic switching device for the suppression of transients Sep. 30, 1986
4613884 Light controlled triac with lateral thyristor firing complementary main thyristor section Sep. 23, 1986
4612449 Thyristor having a secondary emitter electrode and a method for operating the same Sep. 16, 1986
4604638 Five layer semiconductor device with separate insulated turn-on and turn-off gates Aug. 5, 1986
4599633 Integrated self-firing amplified thyristor structure for on/off switching of high currents and control circuit thereof Jul. 8, 1986
4595939 Radiation-controllable thyristor with multiple, non-concentric amplified stages Jun. 17, 1986
4577210 Controlled rectifier having ring gate with internal protrusion for dV/dt control Mar. 18, 1986
4563698 SCR Having multiple gates and phosphorus gettering exteriorly of a ring gate Jan. 7, 1986
4529998 Amplified gate thyristor with non-latching amplified control transistors across base layers Jul. 16, 1985
4509068 Thyristor with controllable emitter short circuits and trigger amplification Apr. 2, 1985
4502072 FET Controlled thyristor Feb. 26, 1985
4502071 FET Controlled thyristor Feb. 26, 1985
4500901 Thyristor having n.sup.+ - main and auxiliary emitters and a p.sup.+ ring forming a p.sup.+ n.sup.+ junction with the main emitter Feb. 19, 1985
4486768 Amplified gate turn-off thyristor Dec. 4, 1984
4472642 Power semiconductor switching device Sep. 18, 1984
4445133 Semiconductor device Apr. 24, 1984
4414559 Semiconductor thyristor device with laterally displaced auxiliary and main cathode regions Nov. 8, 1983
4394677 Thyristor for low-loss triggering of short impulses with Schottky contact to control gate electrode Jul. 19, 1983
4327367 Thyristor with even turn-on line potential and method with 1-micron to 5-mil wide alignment region band Apr. 27, 1982
4315274 Thyristor with switchable capacitor between auxiliary thyristor cathode and main thyristor gate regions Feb. 9, 1982
4298882 Multilayer semiconductor element Nov. 3, 1981

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